BC177
BC178-BC179
January 1989
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
The BC177, BC178 and BC179 are silicon planar
epitaxial PNPtransistors inTO-18 metal case.They
are suitable foruse in driver audiostages, lownoise
input audio stages and as low power, high gain
general purpose transistors. The complementary
NPN types are respectively the BC107, BC108 and
BC109.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol Parameter BC177 BC178 BC179 Unit
VCES Collector-emitter Voltage (VBE = 0) – 50 – 30 – 25 V
VCEO Collector-emitter Voltage (IB= 0) – 45 – 25 – 20 V
VEBO Emitter-base Voltage (IC=0) –5 V
ICCollector Current – 100 mA
ICM Collector Peak Current – 200 mA
Ptot Total Power Dissipation at Tamb ≤25 °C300mW
T
stg Storage Temperature – 65 to 175 °C
TjJunction Temperature 175 °C
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
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ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cutoff Current
(VBE =0) VCE =–20V
VCE =–20V Tamb = 150 °C–1 –100
–10 nA
µA
V(BR)CEO* Collector-emitter
Breakdown Voltage
(IB=0)
IC=–2mA for BC177
for BC178
for BC179
–45
–25
–20
V
V
V
V
(BR)CES Collector-emitter
Breakdown Voltage
(VBE =0)
IC=–10µAfor BC177
for BC178
for BC179
–50
–30
–25
V
V
V
V
(BR)EBO Emitter-base
Breakdown Voltage
(IC=0)
IE=–10µA–5V
V
CE(sat)* Collector-emitter
Saturation Voltage IC= – 10 mA
IC= – 100 mA IB= – 0.5 mA
IB=–5mA –75
–200 –250 mV
mV
VBE* Base-emitter Voltage IC=–2mA V
CE =–5V –550 –640 –750 mV
V
BE(sat ) Base-emitter
Saturation Voltage IC= – 10 mA
IC= – 100 mA IB= – 0.5 mA
IB=–5mA –720
–860 mV
mV
hfe Small Signal
Current Gain IC=–2mA
f = 1 kHz VCE =–5V
for BC177 Gr. A
for BC177 Gr. B
for BC178 Gr. A
for BC178 Gr. B
for BC179 Gr. B
125
240
125
240
240
260
500
260
500
500
* Pulsed: pulsedduration = 300µs, duty cycle= 1 %.
THERMAL DATA
Rth j-case
Rth j-amb Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 200
500 °C/W
°C/W
BC177-BC178-B179
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ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
fTTransition Frequency IC= – 10 mA
f=100MHz V
CE = – 5 V 200 MHz
CCBO Collector-base
Capacitance IE=0 V
CB = – 10 V 5.0 pF
NF Noise Figure IC= – 0.2 mA
Rg=2kΩ
B=200Hz
V
CE =–5V
f = 1 kHz
for BC177
for BC178
for BC179
2
2
1.2
10
10
4
dB
dB
dB
hie Input Impedance IC=–2mA
f = 1 kHz VCE =–5V
for BC177 Gr. A
for BC177 Gr. B
for BC178 Gr. A
for BC178 Gr. B
for BC179 Gr. B
2.7
5.2
2.7
5.2
5.2
kΩ
kΩ
kΩ
kΩ
kΩ
hre Reverse Voltage Ratio IC=–2mA
f = 1 kHz VCE =–5V
for BC177 Gr. A
for BC177 Gr. B
for BC178 Gr. A
for BC178 Gr. B
for BC179 Gr. B
2.7x10–4
4.5x10–4
2.7x10–4
4.5x10–4
4.5x10–4
hoe Output Admittance IC=–2mA
f = 1 kHz VCE =–5V
for BC177 Gr. A
for BC177 Gr. B
for BC178 Gr. A
for BC178 Gr. B
for BC179 Gr. B
25
35
25
35
35
µS
µS
µS
µS
µS
DC Transconductance. DC Normalized Current Gain.
BC177-BC178-BC179
3/6
Transition Frequency. Power Rating Chart.
Collector-emitter Saturation Voltage. Normalized h Parameters.
Normalized h Parameters. Collector-base Capacitance.
BC177-BC178-B179
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
BC177-BC178-BC179
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor forany infringement ofpatents or other rights of third parties which mayresults from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponentsinlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
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BC177-BC178-B179
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