DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS(ON) max ID max TA = +25C * 2 x N + 2 x P channels in a SOIC package * Low On-Resistance 45m @ VGS = 10V 4.5A * Low Input Capacitance 4A * Fast Switching Speed 65m @ VGS = -10V -3.7A * Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 100m @ VGS = -4.5V -2.9A V(BR)DSS N-Channel P-Channel 40V -40V 58m @ VGS = 4.5V Description * Halogen and Antimony Free. "Green" Device (Note 3) * Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This new generation complementary MOSFET H-Bridge features low * on-resistance achievable with low gate drive. * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Applications * Moisture Sensitivity: Level 1 per J-STD-020 * DC Motor Control * Terminal Connections Indicator: See diagram * DC-AC Inverters * Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 * Weight: 0.074 grams (approximate) P2G SO-8 N2D/P2D P1G P1S/P2S NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Features H-Bridge N2G N1S/N2S N1D/P1D N1G Top View Pin Configuration Top View Internal Schematic Ordering Information (Note 4) Part Number DMHC4035LSD-13 Notes: Compliance Standard Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer's Marking C4035LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) C4035LS YY WW 1 DMHC4035LSD Document number: DS36287 Rev. 1 - 2 4 1 of 9 www.diodes.com January 2014 (c) Diodes Incorporated DMHC4035LSD Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units PD 1.5 W RJA 85 53 C/W RJC 15 TJ, TSTG -55 to +150 C Value Units Total Power Dissipation (Note 5) Steady State t<10s NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Maximum Ratings N-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS 20 V A Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25C TA = +70C ID 4.5 3.5 t<10s TA = +25C TA = +70C ID 5.8 4.5 A Steady State TA = +25C TA = +70C ID 4 3.1 A t<10s TA = +25C TA = +70C ID 5.1 4 A IS 1.5 A IDM 25 A Symbol Value Units VDSS -40 V Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Ratings P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -4.5V VGSS 20 V Steady State TA = +25C TA = +70C ID -3.7 -2.9 A t<10s TA = +25C TA = +70C ID -4.8 -3.8 A Steady State TA = +25C TA = +70C ID -2.9 -2.3 A t<10s TA = +25C TA = +70C ID -3.9 -3.0 A IS -1.5 A IDM -15 A Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC4035LSD Document number: DS36287 Rev. 1 - 2 2 of 9 www.diodes.com January 2014 (c) Diodes Incorporated DMHC4035LSD Electrical Characteristics N-CHANNEL (@TA = +25C, unless otherwise specified.) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 40 -- VGS = 0V, ID = 250A IDSS -- -- -- 1 V Zero Gate Voltage Drain Current A VDS = 40V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSS -- -- 100 nA VGS = 20V, VDS = 0V V VDS = VGS, ID = 250A Static Drain-Source On-Resistance VGS(th) RDS (ON) 1 -- 3 -- 26 45 -- 35 58 0.7 1 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance VSD -- Ciss -- 574 -- Output Capacitance Coss -- 87.8 -- Reverse Transfer Capacitance Crss -- 38.7 -- Gate resistance Rg -- 1.6 -- Total Gate Charge (VGS = 4.5V) Qg -- 5.9 -- Total Gate Charge (VGS = 10V) Gate-Source Charge Qg -- 12.5 -- Qgs -- 1.7 -- Gate-Drain Charge Qgd -- 2.2 -- Turn-On Delay Time tD(on) -- 3.1 -- m VGS = 10V, ID = 3.9A VGS = 4.5V, ID = 3.5A V VGS = 0V, IS = 1.25A pF VDS = 20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 20V, ID = 3.9A ns VDD = 20V, VGS = 10V, RL = 20, RG = 6, Turn-On Rise Time tr -- 2.6 -- Turn-Off Delay Time tD(off) -- 15 -- Turn-Off Fall Time tf -- 5.5 -- Reverse Recovery Time trr -- 6.5 -- ns Reverse Recovery Charge Qrr -- 1.2 -- nC IF = 3.9A, di/dt = 500A/s Electrical Characteristics P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -40 -- -- V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -- -- -1 A VDS = -40V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSS -- -- 100 nA VGS = 20V, VDS = 0V V Static Drain-Source On-Resistance VGS(th) RDS (ON) -1 -- -3 -- 49 65 -- 73 100 m Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance VSD -- -0.7 -1.2 V Ciss -- 587 -- pF Output Capacitance Coss -- 88.1 -- pF Reverse Transfer Capacitance Crss -- 40.2 -- pF Gate resistance Rg -- 12.3 -- Total Gate Charge (VGS = -4.5V) Qg -- 5.4 -- nC Total Gate Charge (VGS = -10V) Gate-Source Charge Qg -- 11.1 -- nC Qgs -- 1.5 -- nC Gate-Drain Charge Qgd -- 2 -- nC Turn-On Delay Time tD(on) -- 3.6 -- ns Turn-On Rise Time tr -- 2.9 -- ns Turn-Off Delay Time tD(off) -- 36.3 -- ns Turn-Off Fall Time tf -- 15.3 -- ns Reverse Recovery Time trr -- 15.5 -- ns Reverse Recovery Charge Qrr -- 16.9 -- nC Notes: VDS = VGS, ID = -250A VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.3A VGS = 0V, IS = -1A VDS = -20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.2A VDD = -15V, VGS = -10V, RG = 6, ID = -1A IF = -4.2A, di/dt = 500A/s 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMHC4035LSD Document number: DS36287 Rev. 1 - 2 3 of 9 www.diodes.com January 2014 (c) Diodes Incorporated DMHC4035LSD Typical Characteristics - N-CHANNEL 20 18 20 VGS = 3.5V VGS = 10V VGS = 5.0V 16 VGS = 4.5V 12 VGS = 4.0V 10 VGS = 3.0V 8 6 VGS = 2.3V 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.045 0.04 VGS = 4.5V 0.035 VGS = 10V 0.025 0.02 0.015 0 2 8 6 TA = 150C TA = 125C 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85C TA = 25C TA = -55C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 0.18 ID = 3.9A 0.16 0.14 ID = 3.5A 0.12 0.1 0.08 0.06 0.04 0.02 20 00 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 0.08 VGS = 4.5V 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = 150C 0.07 TA = 125C TA = 85C 0.05 TA = 25C 0.04 0.03 T A = -55C 0.02 0.01 0 10 0 5 0.05 0.01 12 2 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.03 14 4 VGS = 2.5V 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 14 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 16 0 VDS = 5.0V 18 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMHC4035LSD Document number: DS36287 Rev. 1 - 2 20 4 of 9 www.diodes.com 1.6 1.4 VGS = 10 V ID = 10A VGS = 5V ID = 5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature January 2014 (c) Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.5 0.08 0.07 0.06 VGS = 5V ID = 5A 0.05 0.04 VGS = 10 V ID = 10A 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2 ID = 1mA ID = 250A 1.5 1 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 20 C iss CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) 16 14 12 TA = 150C 10 TA = 25C 8 TA = 125C 6 4 T A = 85C T A = -55C 2 0 0 100 Coss C rss 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 10 VDS = 20V ID = 3.9A 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DMHC4035LSD 6 4 2 0 0 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 T J(max) = 150C PW = 1ms PW = 100s TA = 25C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMHC4035LSD Document number: DS36287 Rev. 1 - 2 14 5 of 9 www.diodes.com 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2014 (c) Diodes Incorporated DMHC4035LSD Typical Characteristics - P-CHANNEL 15 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDS = -5.0V VGS = -3.5V VGS = -5.0V 12 9 VGS = -3.0V 6 VGS = -2.5V 3 9 6 T A = 150C 3 T A = 125C VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.2 0.18 0.16 0.14 0.12 VGS = -4.5V 0.1 0.08 0.06 VGS = -10V 0.04 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Gate Voltage T A = 85C TA = 25C TA = -55C 0 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 14 Typical Transfer Characteristics 5 0.5 ID = -4.2A 0.45 0.4 0.35 0.3 0.25 ID = -3.3A 0.2 0.15 0.1 0.05 20 0 0 2 4 6 8 10 12 14 16 18 -VGS, GATE-SOURCE VOLTAGE (V) Figure 16 Typical Transfer Characteristics 20 1.8 0.2 VGS = -4.5V 0.18 0.16 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 15 VGS = -10V TA = 150C 0.14 TA = 125C 0.12 T A = 85C 0.1 TA = 25C 0.08 TA = -55C 0.06 0.04 1.6 VGS = -10V ID = -10A 1.4 1.2 VGS = -5V ID = -5A 1 0.8 0.02 0 0 3 6 9 12 -ID, DRAIN SOURCE CURRENT (A) Figure 17 Typical On-Resistance vs. Drain Current and Temperature DMHC4035LSD Document number: DS36287 Rev. 1 - 2 15 6 of 9 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature January 2014 (c) Diodes Incorporated 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.15 0.12 VGS = -5V ID = -5A 0.09 VGS = -10V ID = -10A 0.06 0.03 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 19 On-Resistance Variation with Temperature 1.8 1.6 -ID = 250A 1.4 -ID = 1mA 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 20 Gate Threshold Variation vs. Ambient Temperature 15 1000 CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) Ciss 12 9 TA= 85C 6 TA= 25C TA= 125C TA= 150C 3 0 TA= -55C 0 Coss Crss 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22 Typical Junction Capacitance 40 100 -ID, DRAIN CURRENT (A) 8 6 VDS = -20V ID = -4.2A 4 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 T J(max) = 150C PW = 1ms PW = 100s TA = 25C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 2 0 100 10 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21 Diode Forward Voltage vs. Current 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DMHC4035LSD 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 23 Gate-Charge Characteristics DMHC4035LSD Document number: DS36287 Rev. 1 - 2 12 7 of 9 www.diodes.com 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24 SOA, Safe Operation Area 100 January 2014 (c) Diodes Incorporated DMHC4035LSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 110C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 1 E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail `A' 7~9 h 45 Detail `A' A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMHC4035LSD Document number: DS36287 Rev. 1 - 2 8 of 9 www.diodes.com January 2014 (c) Diodes Incorporated DMHC4035LSD IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2014, Diodes Incorporated www.diodes.com DMHC4035LSD Document number: DS36287 Rev. 1 - 2 9 of 9 www.diodes.com January 2014 (c) Diodes Incorporated