DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
3 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS — — 1 A VDS = 40V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 1 — 3 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON)
—26 45
m VGS = 10V, ID = 3.9A
—35 58 VGS = 4.5V, ID = 3.5A
Diode Forward Voltage VSD —0.7 1 V
VGS = 0V, IS = 1.25A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss — 574 —
pF VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance Coss —87.8 —
Reverse Transfer Capacitance Crss —38.7 —
Gate resistance Rg —1.6 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Qg —5.9 —
nC VDS = 20V, ID = 3.9A
Total Gate Charge (VGS = 10V) Qg —12.5 —
Gate-Source Charge Qgs —1.7 —
Gate-Drain Charge Qgd —2.2 —
Turn-On Delay Time tD(on) —3.1 —
ns VDD = 20V, VGS = 10V,
RL = 20, RG = 6,
Turn-On Rise Time tr —2.6 —
Turn-Off Delay Time tD(off) —15 —
Turn-Off Fall Time tf —5.5 —
Reverse Recovery Time trr —6.5 —ns IF = 3.9A, di/dt = 500A/s
Reverse Recovery Charge Qrr —1.2 —nC
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -40 —— V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current IDSS — — -1 A VDS = -40V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -1 — -3 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON)
—49 65
m VGS = -10V, ID = -4.2A
—73 100 VGS = -4.5V, ID = -3.3A
Diode Forward Voltage VSD —-0.7 -1.2 V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss —587 —pF VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance Coss —88.1 —pF
Reverse Transfer Capacitance Crss —40.2 —pF
Gate resistance Rg —12.3 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg —5.4 —nC
VDS = -20V, ID = -4.2A
Total Gate Charge (VGS = -10V) Qg —11.1 —nC
Gate-Source Charge Qgs —1.5 —nC
Gate-Drain Charge Qgd —2 —nC
Turn-On Delay Time tD(on) —3.6 —ns
VDD = -15V, VGS = -10V,
RG = 6, ID = -1A
Turn-On Rise Time tr —2.9 —ns
Turn-Off Delay Time tD(off) —36.3 —ns
Turn-Off Fall Time tf —15.3 —ns
Reverse Recovery Time trr —15.5 —ns IF = -4.2A, di/dt = 500A/s
Reverse Recovery Charge Qrr —16.9 —nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.