QSE773
PLASTIC SILICON PIN PHOTODIODE
1. Derate power dissipation linearly 2.50 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. As long as leads are not under any stress or spring tension.
6. Light source is an GaAs LED which has a peak emission
wavelength of 940 nm.
7. All measuements made under pulse conditions.
1 of 3 100032A
FEATURES
• Daylight Filter
• Sidelooker Package
• Pin Photodiode
• Wide Reception Angle, 120°
• Chip Size = .1072inches (2.712mm)
ANODE
CATHODE
SCHEMATIC
0.215 (5.46)
0.199 (5.06)
0.311 (7.90)
0.288 (7.30)
0.100 (2.54)
0.060 (1.52)
0.610 (15.49)
MIN
0.126 (3.20)
0.110 (2.80)
0.020 (0.51)
SQ. (2x)
0.116 (2.95)
0.100 (2.54)
C
L
PACKAGE DIMENSIONS
Parameter Symbol Rating Unit
Operating Temperature TOPR -40 to +85 °C
Storage Temperature TSTG -40 to +85 °C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
Reverse Voltage VR32 V
Power Dissipation(1) PD150 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
QSE773
PLASTIC SILICON PIN PHOTODIODE
2 of 3 100032A
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Reverse Voltage IR= 0.1 mA VR32 —V
Dark Reverse Current VR= 10 V IR(D) —30 nA
Peak Sensitivity VR= 5 V !PK 920 nm
Reception Angle @ 1/2 Power "+/-60 Degrees
Photo Current Ee= 1.0 mW/cm2, VCE = 5 V(6) IPH 30 —µA
Capacitance VR= 3 V C 20 pF
Rise Time VR= 5 V, RL= 1 K tr50 ns
Fall Time VR= 5 V, RL= 1 K tf50 ns
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
1.0
0.8
0.6
0.4
0.2
0
700 800 900 1000 1100
!#- W A VELENGTH (nm)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
S (!)rel - RELATIVE SPECTRAL SENSITIVITY
120
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Ee - IRRADIANCE (mW/cm2)
Fig. 2 Short Circuit Current vs. Irradiance
ISC - SHORT CIRCUIR CURRENT
Wavelength = 940 nm
TA = 25˚C
TYPICAL PERFORMANCE CURVES
QSE773
PLASTIC SILICON PIN PHOTODIODE
3 of 3 100032A
TA -TEMPERATURE (˚C)
Fig. 4 Dark Current vs. Temperature
IR - DARK CURRENT (nA)
VR - REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
IR -DARK CURRENT (pA)
VR - REVERSE VOLTAGE (V)
Fig. 3 Capacitance vs. Reverse Voltage
CAPACITANCE (pF)
100
80
60
40
20
0
0.01 0.1 1 10 100
f = 1 MHz
E = 0
1000
100
10
1
0 102030405060708090100
VR = 10 V
E = 0
1200
1000
800
600
400
200
00 2 4 6 8 101214161820
E = 0
