CS60-16io1
2 1
3
Single Thyristor
Thyristor
Part number
CS60-16io1
Backside: anode
TAV
T
V V1.14
RRM
60
1600
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
PLUS247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS60-16io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.18
R0.32 K/W
min.
60
VV
200T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
110
P
tot
360 WT = 25°C
C
60
1600
forward voltage drop
total power dissipation
Conditions
1.44
T = 25°C
VJ
140
V
T0
V0.82T = °C
VJ
140
r
T
5.3 mΩ
V1.14T = °C
VJ
I = A
T
V
60
1.46
I = A120
I = A120
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA75
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
140
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
74
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
1.40
1.51
7.08
6.87
kA
kA
kA
kA
1.19
1.29
9.80
9.49
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
180 A
T
P
G
= 0.3
di /dt A/µs;
G
=0.3
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 60 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 60 A
T
125
R
thCH
0.15
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS60-16io1
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
XXXXXXXXX
CS60-14io1 PLUS247 (3) 1400
Package
T
op
°C
T
VJ
°C140
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N120
mounting force with clip
20
mm
mm
5.5
5.5
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
125-40
terminal to terminal
CS60-16io1R ISOPLUS247 (3) 1600
PLUS247
Similar Part Package Voltage class
CS60-12io1 PLUS247 (3) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CS60-16io1 503360Tube 30CS60-16io1Standard
T
stg
°C140
storage temperature
-40
threshold voltage
V0.82
mΩ
V
0 max
R
0 max
slope resistance *
3
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
140
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS60-16io1
1 2 3
b
b1
b2
e
D
L
L1
R
E
Q
C
A
A
A
A2
A1
View A - A
D2
D1
4
E1
Sym. Inches Millimeter
min. max. min. max.
A 0.190 0.205 4.83 5.21
A1 0.090 0.100 2.29 2.54
A2 0.075 0.085 1.91 2.16
b 0.045 0.055 1.14 1.40
b1 0.075 0.084 1.91 2.13
b2 0.115 0.123 2.92 3.12
C 0.024 0.031 0.61 0.80
D 0.819 0.840 20.80 21.34
D1 0.515 - 13.07 -
D2 0.010 0.053 0.51 1.35
E 0.620 0.635 15.75 16.13
E1 0.530 - 13.45 -
e 0.215 BSC 5.45 BSC
L 0.780 0.800 19.81 20.32
L1 0.150 0.170 3.81 4.32
Q 0.220 0.244 5.59 6.20
R 0.170 0.190 4.32 4.83
2 1
3
Outlines PLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS60-16io1
0,01 0,1 1
400
600
800
1000
12
0
0
0,4 0,8 1,2 1,6
0
20
40
60
80
100
1
20
10
0
10
1
10
2
10
3
10
4
0,0
0,1
0,2
0,3
0,4
I
TSM
[A]
I
T
[A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
1000
10000
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150
0
20
40
60
80
100
Fig. 1 Forward characteristics Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 20 40 60
0
20
40
60
80
100
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0,1
1
10
I
G
[mA]
V
G
[
V]
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
6
4
5
2
1
3
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
1: I
GD
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thi
[K/W] t
i
[s]
0.041 0.008
0.043 0.0001
0.039 0.04
0.076 0.57
0.121 0.37
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved