T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 1 of 6
2N3700
Available on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Quali f i ed Lev els:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700 NPN trans istor comes i n a hermetically sealed m etal TO-18 package and is
military qualified for high-reliability applic ations.
TO-18 (TO-206AA)
Package
Also available in:
UB package
(s urf ace mount )
2N3700UB
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3700 number.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
• Rad hard levels are als o available per MIL-PRF-19500/391. (Click here for RHA datasheet.)
• RoHS com pliant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Leaded, hermetically sealed TO-18 package.
• Lightweight.
• Low power.
• Military and other high-reliability appli cations.
MAXIMUM RATINGS @ TA = +25 oC u nless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Impedance Junction-to-Ambient
RӨJA
325
oC/W
Thermal Impedance Junction-to-Case
RӨJC
150
oC/W
Collector-Emitter Voltage
V
CEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total P ower Dissipation: @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PD 0.5
1.0
W
Notes: 1. Derate linearly 2.85 mW/°C for TA ≥ +25 °C.
2. Derate linearl y 10.3 mW/°C for TC ≥ +25 °C.
T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 2 of 6
2N3700
M ECHANI CAL and PACKAGING
• CASE: Hermetically sealed, nickel plated kovar base, nickel cap.
• TERMINALS: Gold plate over nickel, kovar, solder dipped.
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 0.3 grams.
• See Package Dimensions on last page.
PART NOME NCLAT URE
JAN 2N3700 e3
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEF INITI ONS
Symbol
Definition
f
Frequency
IB
Base cur rent ( dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 3 of 6
2N3700
ELECTRICAL CHARACTE RISTICS @ TA = +25 °C, unles s otherwise noted
Paramete r s / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown C urrent
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base C utoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Em itter Cutoff Current
VCE = 90 V
ICES 10 nA
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO2 10 nA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA , I
B
= 15 mA
IC = 500 mA , IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emi tt er Satu r ation V oltage
VBE(sat) 1.1 V
I
C
= 150 mA , I
B
= 15 mA
DYNAMIC CHARACTERIST ICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short -Circ uit F orward C urrent Transfer Rat io
IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz hfe 80 400
Magn itude of Smal l -Signa l Short -Circuit Forward Current
Trans fer Ratio
IC = 50 mA, VCE = 10 V, f = 2 0 MHz |hfe| 5.0 20
O utput Capac itance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
I nput Cap acitance
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF
T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 4 of 6
2N3700
ELECTRICAL CHARACTE RISTICS @ TA = +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA (See S OA gr aph below and MIL-STD-750, method 3053)
DC Te sts
TC = 2 5 °C, 1 c yc l e, t = 10 ms
Test 1
2N3700
V
CE
= 10 V
IC = 180 mA
Test 2
2N3700
V
CE
= 40 V
IC = 45 mA
Test 3
2N3700
V
CE
= 80 V
IC = 22.5 mA
(1) P ulse Test: Pulse W i dth = 300 µs, duty cycle ≤ 2.0%.
VCE – COLLECTOR – EMITTER VOLTAGE – V
Max i mum Safe Operating Ar ea @ TC = 25 ºC
I
C
– COLL ECTO R CURRENT - A
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2N3700
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power D erating ( RӨJA)
Leads = .125 inch (3.175mm)
TC (oC) Case at base
FIGURE 2
Temperature-Power D erating ( RӨJC)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 6 of 6
2N3700
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions ar e in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius ) maximum, TH shall be held for a minimum length of .011 inch (0.28 m m) .
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seati ng plan e shal l be with in .007 in ch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relati ve to tab at MMC. This dev ice may be measured by
direct metho ds.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads .
9. The collector shall be internally connected to the c ase.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = coll ector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7,8
LL
.500
.750
12.70
19.05
7,8
LU
.016
.019
0.41
0.48
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
P
.100
2.54
Q
.030
0.76
5
TL
.028
.048
0.71
1.22
3,4
TW
.036
.046
0.91
1.17
3
r
.010
0.25
10
α
45° TP
45° TP
6
1, 2, 9, 11, 12
