11
<TRANSISTOR ARRAY>
M54585FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
2012.May
OUTPUT
INPUT
GND
COM
2.7K
7.2K
3K
PIN CONFIGURATION
DESCRIPTION
M54585FP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
FEATURES
●High breakdown voltage ( BVCEO > 50V)
●High-current driving (IC(max) = 500mA)
●With clamping diodes
●Driving available with TTL output or with PMOS IC output
APPLICATIONS
Drives of relays and printers, digit drives of indication
elements such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585FP is each have eight circuits, which are NPN
Darlington transistors. Input transistors have resistance of
2.7kΩbetween the base and input pin. A spikekiller clamping
diode is provided between each output pin and GND. Output
transistor emitters are all connected to the GND pin.
Collector current is 500mA maximum. The maximum collector-
emitter voltage is 50V.
Package type 20P2N-A
3
4
5
6
7
8
9
10
18
17
16
15
14
13
12
11
→O2
→O3
→O4
→O5
→O6
→O7
→O8
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
IN8→
GND COM COMMON
OUTPUT
INPUT
CIRCUIT DIAGRAM
The eight circuits share the COM and GND.
℃
–55 ～+125Storage temperature Tstg
℃
–20 ～+75Operating t emp e ratur e Topr W1.10Ta = 25℃, when mounted on board
Power dissipation
PdV50
Clamping diode reverse voltage
VR
mA500
Clamping diode forward current
IF
V–0.5 ～+30
Input voltage
VI
mA500Current per circuit output, L
Output current
IC
V–0.5 ～+50Output , H
Collector-emitter voltage
VCEO
Unit Ratings Conditions Parameter Symbol
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)
219 →O1
IN1→
120
NC NC
○
NC : No connection
The diode, indicated with the dotted line, is parasitic, and
cannot be used. Unit :Ω
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54585FP
2
2012.May
NOTE 1 TEST CIRCUIT TIMING DIAGRAM
OUTPUT
INPUT 50%
50%
ｔon
50%
50%
ｔoff
50Ω CL
RL
PG
INPUT
OUTPUT
Measured device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω,VI = 3.85V
(2) Input-output conditions : RL = 25Ω, Vo = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
VO
OPEN
IC <200mA
IC <400mA
Duty Cycle
no more than 4%
V0.6
－
0 “L” input voltage VIL
－
3.4 V30
3.85
“H” input voltage VIH
200
－
0
Duty Cycle
no more than 20%
mA
400
－
0
Collector current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IC
V50
－
0
Output voltageVO
maxtypmin Unit
Limits
ParameterSymbol
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃)
188.7
－
VI= 25V
－－
25001000VCE = 4V, IC= 350mA, Ta = 25℃
DCamplificationfactor
hFE
μA
100
－－
VR= 50V
Clamping diode reverse
current
IR
V
2.41.5
－
IF= 400mA
Clamping diode forward
voltage
VF
mA
1.80.95
－
VI= 3.85V
Input current
II
1.61.0
－
VI = 3.4V , IC= 200mA V
2.41.3
－
VI = 3.85V , IC= 400mA
Collector-emitter saturation
voltage
VCE(sat)
V
－－
50ICEO = 100μA
Collector‐emitterbreakdown
voltage
V(BR)CEO
maxtypmin Unit
Limits
Test conditionsParameterSymbol
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃）
*：The typical values are those measured under ambient temperature (Ta) of 25℃.
There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃）
ｎｓ
—240—
Turn-off time
toff
ｎｓ
—12—
CL= 15pF（note 1）
Turn-on time
ton maxtypmin Unit
Limits
Test conditionsParameterSymbol
＊
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54585FP
3
2012.May
VCE=4V
Ta=25℃
Ta=-20℃
Ta=75℃
01234
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
VCE=4V
10 3
10 2
7
5
3
2
10 2
7
5
32
10 1
7
5
3
2
75
3
210 3
①
②
③
④
⑥⑦
⑤
⑧
0 20 60 80 100
0
100
200
300
40
400
①
②
③
④
⑥⑦
⑤
⑧
0 20 60 80 100
0
100
200
300
40
400
Ta=25℃
Ta=-20℃
Ta=75℃
VI=3.4V
0 0.5 1.0 1.5 2.0
0
100
200
300
400
•The collector current values
represent the current per circuit.
•Repeated frequency ≥10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25℃
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (℃)
Power dissipation Pd (W)
0 25 50 75 100
0
0.5
1.0
1.5
Output Satura ti on Volt ag e
Collector Current Characteristics
Collector saturation voltage VCE(sat) (V)
Collector current IC(mA)
Duty-Cycle- Colle ctor cur rent Charact eristic s
Duty cycle (%)
Collector current IC(mA)
Duty-Cycle- Colle ctor cur rent Charact eristic s
Duty cycle (%)
Collector current IC(mA)
DC Amplification Factor
Collector Current Characteristics
Collector current IC(mA)
DC amplification factor hFE
Collector current IC(mA)
Grounded Emitter Transfer Characteristics
Input voltage VI(V)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥10Hz
•The value in the c i rcle represents the
value of the simultaneously-operated c i rcuit.
•Ta = 75℃
500
500
500
2.0
10 4500
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54585FP
4
2012.May
0 0.5 1.0 1.5 2.0
0
100
200
300
Ta=25℃
Ta=-20℃
Ta=75℃
400
0 5 10 20 25
0
2
6
8
Ta=25℃
Ta=75℃
15
4
Ta=-20℃
Clamping Diode Charac teristic s
Forward bias voltage VF(V)
Forward bias current IF(mA)
Input Chara cteristics
Input voltage VI(V)
Input current II(mA)
500
10
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54585FP
5
2012.May
PACKAGE OUTLINE
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54585FP
6
2012.May
© 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
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