© Semiconductor Components Industries, LLC, 2018
May, 2018 − Rev. 1
1Publication Order Number:
FFSB20120A/D
FFSB20120A
Silicon Carbide Schottky
Diode
1200 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 200 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery / No Forward Recovery
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•General Purpose
•SMPS, Solar Inverter, UPS
•Power Switching Circuits
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D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSB20120A = Specific Device Code
1
3
$Y&Z&3&K
FFSB
20120A
1., 3. Cathode 2. Anode
2
FFSB20120A
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 200 mJ
IFContinuous Rectified Forward Current @ TC < 157°C 20 A
Continuous Rectified Forward Current @ TC < 135°C 32
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms1190 A
TC = 150°C, 10 ms990 A
IF,S M Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 135 A
IF,R M Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 74 A
Ptot Power Dissipation TC = 25°C 333 W
TC = 150°C 55 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 0.45 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 20 A, TC = 25°C−1.45 1.75 V
IF = 20 A, TC = 125°C−1.7 2.0
IF = 20 A, TC = 175°C−2.0 2.4
IRReverse Current VR = 1200 V, TC = 25°C− − 200 mA
VR = 1200 V, TC = 125°C− − 300
VR = 1200 V, TC = 175°C− − 400
QCTotal Capacitive Charge V = 800 V −120 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −1220 −pF
VR = 400 V, f = 100 kHz −111 −
VR = 800 V, f = 100 kHz −88 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSB20120A FFSB20120A D2PAK−3
(Pb-Free / Halogen Free)
800 / Tape & Reel
FFSB20120A
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
4
8
12
16
20
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = −55oC
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
200 400 600 800 1000 1200
10−3
10−2
10−1
100
101
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = −55oC
TJ = 25 oC
TJ = 75 oC
25 50 75 100 125 150 175
0
50
100
150
200
250
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
TC, CASE TEMPERATURE (
oC)
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (
oC)
0 200 400 600 800 1000
0
25
50
75
100
125
150
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
0.1 1 10 100 1000
100
1000
50
5000
CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
FFSB20120A
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4
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Capacitance Stored Energy
Figure 8. Junction-to-Case Transient Thermal Response Curve
0 200 400 600 800 1000
0
10
20
30
40
50
EC, CAPACITIVE ENERGY (mJ)
VR, REVERSE VOLTAGE (V)
10−610−510−410−310−210−11
0.0001
0.001
0.01
0.1
1
2
0.2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
0.01 0.02
0.05
0.1
0.5
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 0.45 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZqJC(t) + TC
PDM
t1
t2
FFSB20120A
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6
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.330 0.380 8.38 9.65
E0.380 0.420 9.65 10.67
A0.160 0.190 4.06 4.83
b0.020 0.039 0.51 0.99
c2 0.045 0.065 1.14 1.65
e0.100 BSC 2.54 BSC
A1 0.000 0.010 0.00 0.25
c0.012 0.029 0.30 0.74
L0.070 0.110 1.78 2.79
H0.575 0.625 14.60 15.88
L2 −−−− 0.070 −−−− 1.78
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CHAMFER OPTIONAL
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
AT THE OUTERMOST EXTREMES OF THE PLAS-
TIC BODY AT DATUM H.
5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
DIMENSIONS E, L1, D1 AND E1.
6. OPTIONAL MOLD FEATURE
E1 0.245 −−−− 6.22 −−−−
L1 −−−− 0.066 −−−− 1.68
D1 0.260 −−−− 6.60 −−−−
L3 0.010 BSC 0.25 BSC
M08 08°° °°
E
D
H
L1
b
e
A1 B
H
L
MDETAIL C
SEATING
PLANE
A
2X
M
A
M
0.10 B
c2
c
A
BSEATING
PLANE
DETAIL C
VIEW A−A
SIDE VIEW
TOP VIEW
E2
L2
A
A
VIEW A−A
E1
D1
L1
OPTIONAL CONSTRUCTIONS
L3
GAUGE
PLANE
NOTE 3
M
A
M
0.10 B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
0.366
0.100
DIMENSIONS: INCHES
PITCH
2X
0.653
0.063
2X
0.436
0.169
SOLDERING FOOTPRINT*
NOTE 6
FFSB20120A
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7
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FFSB20120A/D
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