SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)73 ML111B ML132B MT132B 2N3697 2N3113 28412 MEM301 2N3695 $D5012* * $05015* 2N3379 2N3385 K1502 UC140 MT101B RN1030 RN3020R SFF103 2N5505 v 2N5508 2NS511 2N55149 DP1003 v DP1006v Vv DP1009 2N4088 3N96 BFX83 FP4339 MEM101T MM2103 P1027 P1069E ut Vv DISS @ @25C |Id=0 |Vds D.A.T.A. 40 30 75 30 @ Vgs= -60mA 180uA 90m 1.0n m 3.7 5.0 B* 5.0 D* 6m% 30m% m 6.0mA 20nA n 1.5n 50n 50m! 1.5m 5Qm| 100u |5.0n 30m 3.0mA 6.0m 5.0m 50m) 35m 50m|3.8m 5m 50mj600u Igss@ Vgs>V' Vds>Vp|&Vds= -10n 50p -10n 100u 1.0n 3.0p .On n 15n 100p 100p 10p 3.0n 3.0n 10n 100p 100p 4.5 1.7m | 35u% 5.Op# * .1p 1.1pt* * Ip 1.1 pt* 2.0pA 5.0pa 1.0pA 8.0p 6.9pt 4.0pt 4.0pt 3.0 A* 9p 1.0m 6.5 m . 75m : 20p% 10 [3.0m 100u%|600 %| 40p# 10 | 7.0m .12k 16pt 20 |1.0m 1.2kt |5.0p% 20 |300u 2.4kt |5.0p% SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER OF (1) DISSIPATION IN FREE AIR 4.0m 4.0m 4.0m 2.0m C- /200 |E 0 TURE | s/a AD 175 2008S 200 200J 125J T0200|D E R115b L53b L53b u 7072 u TO18 TO17 TO72 TO72 L53 L54 u22 u22 200S |ID#A 200J |PL 200J |PL 73b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUCTURE|M/MAX. /Y200 A|TEMP| s/a T0200 TO18 u51 112