Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
Surface Mount PIN Diode SP2T Switches
MSW2030-203, MSW2031-203 &
MSW2032-203 Series Datasheet
Description
The MSW2030-203, MSW2031-203, and MSW2032-203 series of surface mount silicon PIN diode SP2T
switches comprises three switches which can be used for high power transmit/receive (TR) switching or
active receiver protection from 50 MHz to 1 GHz, 400 MHz to 4 GHz and 2 to 6 GHz respectively. These
switches are manufactured using Aeroflex / Metelics proven hybrid manufacturing process incorporating
high voltage PIN diodes and passive devices integrated on a ceramic substrate. These low profile,
compact, surface mount components (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large
signal performance compared to that of MMIC devices in QFN packages. The SP2T switches are designed
in a symmetrical topology to enable either switched RF port to be used as the high-input-power-handling
port, to minimize insertion loss and to maximize isolation performance. The very low thermal resistance
(< 25 ºC/W) of the PIN diodes in these devices enables them to reliably handle RF incident power levels
of 50 dBm CW and RF peak incident power levels of 57 dBm in cold switching applications at TA= 85 ºC.
The thick I layers of the PIN diodes (> 100 μm), coupled with their long minority carrier lifetime (> 2 μs),
produces input third order intercept point (IIP3) greater than 65 dBm.
These MSW2030-203, MSW2031-203, and MSW2032-203 series SP2T switches are designed to be used
in high average and peak power switch applications, operating from 50 MHz to 6 GHz in three bands,
which utilize high volume, surface mount, solder re-flow manufacturing. These products are durable and
capable of reliably operating in military, commercial, and industrial environments. The devices are RoHS
compliant.
Environmental Capabilities
The MSW2030-203, MSW2031-203, and MSW2032-203 Series SP2T Switches are capable of meeting the
environmental requirements of MIL-STD-202 and MIL-STD-750.
ESD and Moisture Sensitivity Level Rating
PIN Diode switches are susceptible to damage from ESD events, as are all semiconductors. The ESD
rating for these devices is Class 1C, HBM. The moisture sensitivity level rating is MSL 1.
Features
• Wide Frequency Range: 50 MHz to 6 GHz, in 3 bands
• Surface Mount SP2T Switch in Compact Outline:
8 mm L x 5 mm W x 2.5 mm H
• Higher Average Power Handling than Plastic Packaged
MMIC Switches: 100 W CW
• High RF Peak Power: 500 W
• Low Insertion Loss: 0.25 dB
• High IIP3: 65 dBm
• Operates From Positive Voltage Only: 5 V & 28 V to 125 V
• RoHS Compliant
Applications
• High Power Transmit/Receive (TR) Switching
• Active Receiver Protection
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2
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
Pinouts Schematic
J1
J0
J2
B2
B1
Truth Table
Port J0 to Port J1 Port J0 to Port J2 Bias: J1
(notes 1, 2)
Bias: J2
(notes 1, 2)
B1
(notes 1, 2)
B2
(notes 1, 2)
Low loss Isolation V = 0 V,
I = -100 mA
V = VHIGH,
I = 25 mA
V = VHIGH,
I = 0 mA
V = 0 V,
I = -25 mA
Isolation Low loss V = VHIGH,
I = 25 mA
V = 0 V,
I = -100 mA
V = 0 V,
I = -25 mA
V = VHIGH,
I = 0 mA
Notes:
1. 28 V ≤VHIGH ≤125 V.
2. PIN diode minimum reverse DC voltage (VHIGH) to maintain high resistance in the OFF PIN diode is
determined by RF frequency, incident power, duty cycle, characteristic impedance and VSWR as well
as by the characteristics of the diode. The recommended minimum reverse bias voltage (VHIGH)
values are provided in the Minimum Reverse Bias Voltage table of this datasheet.
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
MSW2030-203 Electrical Specifications
Z0= 50 Ω, PIN = 0 dBm, TA = +25 ºC (Unless Otherwise Defined)
SP2T PIN Diode Switches
MSW2031-203 Electrical Specifications
Z0= 50 Ω, PIN = 0 dBm, TA = +25 ºC (Unless Otherwise Defined)
PIN Symbol Test Conditions Minimum
Value
Typical
Value
Maximum
Value Units
Frequency F50 - - - 1000 MHz
Insertion Loss IL Bias state 1: port J0 to J1
Bias state 2: port J0 to J2 - - - 0.3 0.4 dB
Return Loss RL Bias state 1: port J0 and J1
Bias state 2: port J0 and J2 20 22 - - - dB
Isolation Isol Bias state 1: port J0 to J2
Bias state 2: port J0 to J1 50 52 - - - dB
CW Incident Power
(Note 2) Pinc(CW) Source & load VSWR = 1.5:1 - - - 50 51 dBm
Peak Incident Power
(Note 2) Pinc(Pk) Source & load VSWR = 1.5:1, pulse
width = 10 μs, duty cycle = 1 % - - - 57 - - - dBm
Switching Time
(Note 1) tSW 10% -90% RF voltage,
TTL rep rate = 100 kHz - - - 2 3 μs
Input 3rd Order
Intercept Point IIP3
F1 = 500 MHz, F2 = 510 MHz,
P1 = P2 = 10 dBm, measured on
path biased to low loss state
60 65 - - - dBm
PIN Symbol Test Conditions Minimum
Value
Typical
Value
Maximum
Value Units
Frequency F 400 - - - 4000 MHz
Insertion Loss IL Bias state 1: port J0 to J1
Bias state 2: port J0 to J2 - - - 0.5 0.7 dB
Return Loss RL Bias state 1: port J0 and J1
Bias state 2: port J0 and J2 14 16 - - - dB
Isolation Isol Bias state 1: port J0 to J2
Bias state 2: port J0 to J1 32 35 - - - dB
CW Incident Power
(Note 2) Pinc(CW) Source & load VSWR = 1.5:1 - - - 50 51 dBm
Peak Incident Power
(Note 2) Pinc(Pk) Source & load VSWR = 1.5:1, pulse
width = 10 μs, duty cycle = 1 % - - - 57 - - - dBm
Switching Time
(Note 1) tSW 10% -90% RF voltage,
TTL rep rate = 100 kHz - - - 1 2 μs
Input 3rd Order
Intercept Point IIP3
F1 = 500 MHz, F2 = 510 MHz,
P1 = P2 = 10 dBm, measured on
path biased to low loss state
60 65 - - - dBm
Conditions:
1. State 1 (J0 – J1 in low insertion loss state, J0 – J2 in isolation state):
a. B1: VHIGH (note 2), 0 mA
b. B2: -25 mA, 0 V
c. J1: -100 mA, 0 V
d. J2: 25 mA, VHIGH (note 2)
e. J0: 100 mA, ~0.9 V
2. State 2 (J0 – J2 in low insertion loss state, J0 – J1 in isolation state):
a. B1: -25 mA, 0 V
b. B2: VHIGH (note 2), 0 mA
c. J1: 25 mA, VHIGH (note 2)
d. J2: -100 mA, 0 V
e. J0: 100 mA, ~0.9 V
Electrical Specifications Notes:
1. Switching time ( 50 % TTL – 10/90 % RF Voltage ) is a function of the PIN diode driver performance as well
as the characteristics of the diode. An RC “current spiking network” is used on the driver output to provide a
transient current to rapidly remove stored charge from the PIN diode. Typical component values are: R = 50
to 220 Ωand C = 470 to 1,000 pF. Aeroflex / Metelics MPD2T28125-700 is the recommended PIN diode
driver to interface with the MSW2030-203, MSW2031-203, and MSW2032-203 SP2T switches. Its data
sheet is available at (http://www.aeroflex.com/metelics).
2. PIN diode minimum reverse DC voltage (VHIGH) to maintain high resistance in the OFF PIN diode is
determined by RF frequency, incident power, duty cycle, characteristic impedance and VSWR as well as
by the characteristics of the diode. The recommended minimum reverse bias voltage (VHIGH) values are
provided in the Minimum Reverse Bias Voltage table (page 11) of this datasheet.
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4
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
MSW2032-203 Electrical Specifications
Z0= 50 Ω, PIN = 0 dBm, TA = +25 ºC (Unless Otherwise Defined)
PIN Symbol Test Conditions Minimum
Value
Typical
Value
Maximum
Value Units
Frequency F 2 - - - 6GHz
Insertion Loss IL Bias state 1: port J0 to J1
Bias state 2: port J0 to J2 - - - 0.6 0.8 dB
Return Loss RL Bias state 1: port J0 and J1
Bias state 2: port J0 and J2 11 13 - - - dB
Isolation Isol Bias state 1: port J0 to J2
Bias state 2: port J0 to J1 32 35 - - - dB
CW Incident Power
(Note 2) Pinc(CW) Source & load VSWR = 1.5:1 - - - 50 51 dBm
Peak Incident Power
(Note 2) Pinc(Pk) Source & load VSWR = 1.5:1, pulse
width = 10 μs, duty cycle = 1 % - - - 57 - - - dBm
Switching Time
(Note 1) tSW 10% -90% RF voltage,
TTL rep rate = 100 kHz - - - 1 2 μs
Input 3rd Order
Intercept Point IIP3
F1 = 500 MHz, F2 = 510 MHz,
P1 = P2 = 10 dBm, measured on
path biased to low loss state
60 65 - - - dBm
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
Absolute Maximum Ratings
Z0= 50 Ω, PIN = 0 dBm, TA = +25 ºC (Unless Otherwise Defined)
Parameter Conditions Absolute Maximum Value
Forward Current, J0, J1, J2 - - - 250 mA
Forward Current
B1, B2 - - - 150 mA
Reverse Voltage
J0, J1, J2, B1, B2 - - - 125 V
Forward Diode Voltage IF= 250 mA 1.2 V
Operating Temperature - - - -65 ºC to 125 ºC
Storage Temperature - - - -65 ºC to 150 ºC
Junction Temperature - - - 175 ºC
Assembly Temperature t = 10 s 260 ºC for 10 s
CW Incident Power Handling
J0, J1, J2 (Note 1)
Source & load VSWR = 1.5 :1,
TCASE = 85 ºC, cold switching 50 dBm
Peak Incident Power Handling
J0, J1, J2 (Note 1)
Source & load VSWR = 1.5 :1,
TCASE = 85 ºC, cold switching, pulse
width = 10 μs, duty cycle = 1 %
57 dBm
Total Dissipated RF &
DC Power (Note 1) TCASE = 85 ºC, cold switching 8 W
Notes:
1. Backside RF and DC grounding area of device must be completely solder-attached to RF circuit board vias
for proper electrical and thermal circuit grounding.
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6
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
MSW2030-203 Small Signal Typical Performance
TA= + 25 ºC, Z0= 50 Ω(Unless Otherwise Defined)
MSW2030-203 Inseron Loss MSW2030-203 Isolaon
MSW2030-203 Return Loss
-70
-60
-50
-40
-30
-20
-10
0
0 200 400 600 800 1000
Isolation (dB)
Frequency (MHz)
J0-J1
J0-J2
-40
-35
-30
-25
-20
-15
-10
-5
0
0 100 200 300 400 500 600 700 800 900 1000
Return Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
-0.5
-0.4
-0.3
-0.2
-0.1
0
0 100 200 300 400 500 600 700 800 900 1000
Inseron Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
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SP2T PIN Diode Switches
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
MSW2031-203 Small Signal Typical Performance
TA= + 25 ºC, Z0= 50 Ω(Unless Otherwise Defined)
MSW2031-203 Inseron Loss MSW2031-203 Isolaon
MSW2031-203 Return Loss
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Inseron Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
-70
-60
-50
-40
-30
-20
-10
0
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Isolaon (dB)
Frequency (MHz)
J0-J1
J0-J2
-40.00
-30.00
-20.00
-10.00
0.00
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Return Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
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8
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
MSW2032-203 Small Signal Typical Performance
TA= + 25 ºC, Z0= 50 Ω(Unless Otherwise Defined)
MSW2032-203 Inseron Loss MSW2032-203 Isolaon
MSW2032-203 Return Loss
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
2000 2500 3000 3500 4000 4500 5000 5500 6000
Inseron Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
-60
-50
-40
-30
-20
-10
0
2000 2400 2800 3200 3600 4000 4400 4800 5200 5600 6000
Isolaon (dB)
Frequency (MHz)
J0-J1
J0-J2
-40
-30
-20
-10
0
2000 2400 2800 3200 3600 4000 4400 4800 5200 5600 6000
Return Loss (dB)
Frequency (MHz)
J0-J1
J0-J2
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
SP2T Switch Evaluation Board Schematic
P1-J1
Port
J0
P1-B2
Port
J1
Port
J2
P1-J2
MSW203x-203
C1
C5
C22
C6
L2
L7
C7
C4C3
R4
C21C20
L3
C8
P1-J0
L1
R1
C2
C19
J1
J0
J2
B2
B1
P1-B2
C10C12 C11 C9
R2 L4
J3
C14
C13
L5
J4
L6
C16
C15
R3
C17 C18
Reference Path
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10
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
The evaluation boards for the MSW2030 family of surface
mount silicon PIN diode SP2T T-R switches allow the full
exercise of each switch for small signal performance
analysis, as well as for large signal operation with
maximum input signal power of 45 dBm (CW or peak
power). Each evaluation board includes the appropriate
MSW203x-203 switch, DC blocking capacitors at each
RF port and bias decoupling networks at each RF port
which allow DC or low frequency control signals to be
applied to the switch.
Four complementary control signals are required for
proper operation. Bias voltages are applied to the B1 and
B2 bias ports, as well as to the J0, J1 and J2 RF ports to
control the state of the switch. A fixed bias voltage must
be applied to the J0 port (connect 5 V to pin 3 of multi-
pin connector P1) whenever the switch is in operation.
Caution: the evaluation board, as supplied from the
factory, is not capable of handling RF input signals larger
than 45 dBm. If performance of the switch under larger
input signals is to be evaluated several of the passive
components on the board must be changed in order to
safely handle the dissipated power as well as the high
bias voltage necessary for proper performance. The eval-
uation board must be connected to an adequate heat
sink for large signal operation. Contact the factory for
recommended components.
For the purposes of description, State 1 is defined to be
the condition in which the evaluation board is biased to
produce the low insertion condition between ports J0
and J1 while producing high isolation between ports J0
and J2. State 2 is the converse of State 1.
State 1
In State 1, the series PIN diode between the J0 and J1
ports is forward biased by applying 0 V to the J1 bias
input port (pin 1 of multi-pin connector P1). The magni-
tude of the resultant bias current through the diode is
primarily determined by the voltage applied to the J0 bias
port (pin 3 of P1), the magnitude of the forward voltage
across the PIN diode and the resistance of R1. This cur-
rent is nominally 100 mA. At the same time, the PIN
diode connected between J2 and B2 ports is also for-
ward biased by applying a high bias voltage, nominally 28
V, to the J2 bias port (pin 7 of P1) and 0 V to the B2 bias
port (pin 5 of P1). Under this condition, the PIN diode
connected between the J0 and J2 ports is reverse biased
and the PIN diode connected between the J2 and B2
ports is forward biased. The magnitude of the bias cur-
rent through this diode is primarily determined by the
voltage applied to the J2 bias port, the magnitude of the
forward voltage across the PIN diode and the resistance
of R4. This current is nominally 25 mA.
The series PIN diode which is connected between the J0
and J2 ports must be reverse biased during State 1. The
reverse bias voltage must be sufficiently large to maintain
the diode in its non-conducting, high impedance state
when large RF signal voltage may be present in the J0-to-
J1 path. The reverse voltage across this diode is the
arithmetic difference of the bias voltage applied to the J2
bias port and the DC forward voltage of the forward-
biased J0-to-J1 series PIN diode.
The minimum voltage required to maintain the series
diode between J0 and J2 out of conduction is a function
of the magnitude of the RF voltage present, the standing
wave present at the series diode’s anode, the frequency
of the RF signal and the characteristics of the series
diode, among other factors. Minimum control voltages
for several signal frequencies are shown in the table
“Minimum Reverse Bias Voltage”, assuming the input
power to the J0 or J1 port to be 100 W CW and the VSWR
on the J0-J1 path to be 1.5:1.
State 2
In the State 2, the series PIN diode between the J0 and
J2 ports is forward biased by applying 0 V to the J2 bias
input port (pin 7 of multi-pin connector P1). The magni-
tude of the resultant bias current through the diode is
primarily determined by the voltage applied to the J0 bias
port (pin 3 of P1), the magnitude of the forward voltage
across the PIN diode and the resistance of R1. This
current is nominally 100 mA. At the same time, the PIN
diode connected between J2 and B2 ports is reverse
biased by applying a high bias voltage, nominally 28 V, to
the B2 bias port (pin 5 of P1). A high voltage, nominally
28 V, is also applied to the J1 bias port (pin 1 of P1).
Under this condition, the PIN diode connected between
the J0 and J1 ports is reverse biased thus isolating the J1
RF port from the RF signal path between J0 and J2. The
reverse voltage across this diode is the arithmetic differ-
ence of the bias voltage applied to the J1 bias port and
the DC forward voltage of the forward-biased J0-to-J2
series PIN diode. The minimum voltage required to main-
tain the series diode on the J0-to-J1 side of the switch
out of conduction is a function of the magnitude of the RF
voltage present, the standing wave present at the diode’s
anode, the frequency of the RF signal and the character-
istics of the series diode, among other factors.
Evaluation Board Description
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
The values of the reactive components which comprise the
bias decoupling networks as well as the signal path DC
blocking are shown in the table RF Bias Network
Recommended Component Values.
Reference Path
A reference path is provided on the evaluation board, com-
plete with bias decoupling networks, so that the magnitude
of the insertion loss of the microstrip transmission lines
connected to the switch and the associated bias decou-
pling components can be measured and removed from the
measured performance of the switch.
RF Bias Network Recommended Component Values
Part Number F ( MHz ) DC Blocking Inductors RF Bypass
Capacitors Capacitors
MSW2030-203 50 – 1,000 0.1 μF4.7 μH0.1 μF
MSW2031-203 400 – 4,000 27 pF 82 nH 270 pF
MSW2032-203 2,000 – 6,000 22 pf 33 nH 33 pF
Minimum Reverse Bias Voltage
PIN = 100 W CW, VSWR = 1.5:1, Z0 = 50 Ω
Notes: “ NA ” denotes the Switch is not defined for that frequency band.
Part Number F = 20 MHz F = 100 MHz F = 200 MHz F = 400 MHz F = 1 GHz F = 4 GHz
MSW2030-203 120 V 110 V 85 V 55 V 28 V NA
MSW2031-203 NA NA 110 V 85 V 55 V 28 V
MSW2032-203 (F = 1 GHz)
55 V
(F = 2 GHz)
28 V
(F = 3 GHz)
28 V
(F = 4 GHz)
28 V
(F = 5 GHz)
28 V
(F = 6 GHz)
28 V
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12
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
Figure 1: Solder Re-Flow Time-Temperature Profile
Profile Feature Sn-Pb AssemblyPb-Free Assembly
Average ramp-up rate (TLto TP) 3°C/second maximum 3°C/second maximum
Preheat
- Temperature Minimum (TSMIN)100 °C 150 °C
- Temperature Maximum (TSMAX)150 °C 200 °C
- Time (Minimum to maximum) (ts)60-120 seconds 60-180 seconds
TSMAX to TL
- Ramp-up Rate 3° C/second maximum
Time Maintained above:
- Temperature (TL)183 °C 217 °C
- Time (tL) 60-150 seconds 60-150 seconds
Peak Temperature (TP)225 +0 / -5 °C 245 +0/-5 °C
Time within 5°C of actual
Peak Temperature (TP) 10-30 seconds 20-40 seconds
Ramp-down Rate 6 °C/second maximum 6 °C/second maximum
Time 25°C to Peak Temperature 6minutes maximum 8minutes maximum
Assembly Instructions
The MSW2030-203, MSW2031-203, and MSW2032-203 Switches are capable of being placed onto circuit boards
with pick and place manufacturing equipment from tube or tape-reel dispensing. The devices are attached to the cir-
cuit board using conventional solder re-flow or wave soldering procedures with RoHS type or Sn 60 / Pb 40 type
solders per Table 1 and Figure 1.
Table 1: Time-Temperature Profile for Sn 60/Pb40 or RoHS Type Solders
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
MSW2030-203, MSW2031-203 & MSW2032-203 SP2T Switch Outline
(Case Style 203)
Note: Hatched Metal Area on Circuit Side of Device is RF, D.C. , and Thermal Ground.
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14
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
RF Circuit Solder Footprint for Case Style 203 ( CS203 )
Hatched Area is RF, D.C., and Thermal Ground.Vias should be solid copper fill and gold plated for optimum heat
transfer from backside of switch module through Circuit Vias to metal thermal ground.
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Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
SP2T PIN Diode Switches
Part Number Packaging
MSW2030-203-T Tube
MSW2030-203-R Tape-Reel
(Quantities of 250 or 500)
MSW2030-203-W Waffle Pack
MSW2031-203-T Tube
MSW2031-203-R Tape-Reel
(Quantities of 250 or 500)
MSW2031-203-W Waffle Pack
MSW2032-203-T Tube
MSW2032-203-R Tape-Reel
(Quantities of 250 or 500)
MSW2032-203-W Waffle Pack
MSW2030-203-E RF Evaluation Board
MSW2031-203-E RF Evaluation Board
MSW2032-203-E RF Evaluation Board
Part Number Ordering Information:
Aeroflex / Metelics, Inc.
54 Grenier Field Road, Londonderry, NH 03053
Tel: (603) 641-3800
Sales: (888) 641-SEMI (7364)
Fax: (603)-641-3500
975 Stewart Drive, Sunnyvale, CA 94085
Tel: (408) 737-8181
Fax: (408) 733-7645
www.aeroflex.com/metelics metelics-sales@aeroflex.com
Document DS 13162 Rev. D, ECN 11507
Revision Date: 7/14/2012
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an author-
ized sales representative to verify that the information in this data sheet is
current before using this product. Aeroflex does not assume any responsibil-
ity or liability arising out of the application or use of any product or service
described herein, except as expressly agreed to in writing by Aeroflex; nor
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