VCOS & PLOs - SMT
11
11 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
General Description
Features
Functional Diagram
The HMC505LP4 & HMC505LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer ampli ers.
Covering 6.8 to 7.4 GHz, the VCO’s phase noise
performance is excellent over temperature, shock and
vibration due to the oscillator’s monolithic structure.
Power output is +11 dBm typical from a single supply
of +3V @ 80 mA. The voltage controlled oscillator is
packaged in a leadless QFN 4x4 mm surface mount
package.
Pout: +11dBm
Phase Noise: -106 dBc/Hz @100 kHz
No External Resonator Needed
Single Supply: +3V @ 80 mA
QFN Leadless SMT Package, 16mm2
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er for:
• VSAT & Microwave Radio
• Test Equipment & Industrial Controls
• Military
Electrical Speci cations, TA = +25° C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 6.8 - 7.4 GHz
Power Output 811 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -106 dBc/Hz
Tune Voltage (Vtune) 1 11 V
Supply Current (Icc) (Vcc = +3.0V) 80 mA
Tune Port Leakage Current 10 μA
Output Return Loss 9dB
Harmonics
2nd
3rd
-19
-28
dBc
dBc
Pulling (into a 2.0:1 VSWR) 6MHz pp
Pushing @ Vtune= +5V 20 MHz/V
Frequency Drift Rate 0.8 MHz/°C
MMIC VCO w/ BUFFER
AMPLIFIER, 6.8 - 7.4 GHz
v02.0508
HMC505LP4 / 505LP4E