ALPHA IND/ SEMICONDUCTOR 4OE D MM 05465443 0001381 224 mmALP Silicon Parametric Amplifier Varactors T-O7-1| Features @ High Gain at Low Pump Power @ Low Noise @ High Reliability Description The Alpha series of silicon parametric amplifier var- actors are of the diffused mesa design, utilizing N= diffused layer into heavily doped P type material. The mesa is contacted by a thermocompression bonded gold ribbon. The superior beta (B) of these diodes imparts high gain to the amplifier even at low pump power. The high Environmental Capability CONtrifUGe ...... ee e eeeceeeseneneeesseeeeessessseees 20,000 G Gross Leak TeSt........cccccccccccceeccscccecossenes 10*-cc/sec Fine Leak TeSt ...............ccceessseeesseeeeeeeeseeees 10*-cc/sec High Temperature Storage .................cccceesen 200C High Temperature Burn-In ...... Maximum Reverse figure of merit (F,) ofthese varactors makes them ideally Leakage Current .........cccccccccsssssscscscssessseseeees 10 nA suited for broadband and low noise applications. This series of varactors denoted by type numbers 5046, 5371, and 5146 has been expanded to include higher cutoff types. The higher cutoff frequency types are offered in the 290-001 outline. Characteristics 023 Outline Vv, F.,.3V F,* F,OV cs pe Type (V) (GHz) (GHz) (pF) Number Min, Min. Min. Min. Min. | Max. Min. D5371-06 5.5 100 85 60 0.3 1.0 8 D5371-12 5.5 125 110 70 0.3 0.7 8 D5371-18 5.5 150 130 80 0.3 0.7 7 D5371-24 5.5 175 150 90 0.3 0.6 6 D5046-00 5.5 150 100 90 0.3 0.8 3 D5046-06 5.5 200 130 120 0.3 0.7 3 D5046-12 5.5 250 160 150 0.3 0.5 3 D5046-18 5.5 300 190 180 0.2 0.40 3 Power Dissipation, P, (at 25C) oo. c eeeceseecsecssssnssssssssecsnsseseseeseescssessessseseessecersorevsessessansaasaceasenases 300 mW Operating Temperature 0... eessssesesscesessssensssseessessecesssessscesecssesssnsussessuacsucesasssaseassceeseecssecatetesseesues 4+175C 4-83 ALPHA IND/ SEMICONDUCTOR W8E D MM 0585443 0001382 160 MBALP 7-07-)) Silicon Parametric Amplifier Varactors 082 Outline V, F,-3V F, F,Ov C$ p Type (V) (GHz) (GHz) (GHz) Number Min. Min. Min. Min. Min. Max. Min. D5146-06 5.5 100 85 60 0.3 1.0 8 D5146-12 5.5 125 110 70 0.3 0.7 8 D5146-18 5.5 150 130 80 0.3 0.7 7 D5146-24 5.5 175 150 90 0.3 0.6 6 D5146-30 5.5 150 100 90 0.3 0.8 3 D5146-36 5.5 200 130 120 0.3 0.7 3 D5146-42 5.5 250 160 150 0.3 0.5 3 D5146-48 5.5 300 190 180 0.2 0.40 3 Power Dissipation, P, (@t 25C) .......cccesssesessssesesssseesssssensseesessesssesencseecensseesssssnsesensnansensessneesasseeesaeys 300 mW Operating Temperature 2.0... eee seceeeereeesceeesneeeseeaeeseeesesresssssesseeeesseeesaeesneaeesseesesseeessseeeseseeanseseaeneeeeenaes +175C Notes: 5. Total Capacitance is measured at 1 MHz and 0 bias. Junction Capacitance (C,,) is calculated, by subtracting the package capaci- tance for the total capacitance. Capacitance selection to + .05 pF is standard. . fis the ratio of the capacitance at 1A to the capacitance at -3V. 1. Power dissipation Is for continuous operation at 10 GHz. 2. Breakdown Voltage (V,) is measured 10 IA reverse current. 3. Cutoff Frequency (F..) at specified bias is calculated from Q 6 measurement at 10.0 GHz, multiplied by 10.0 GHz. 4. Figure of merit F,' is the difference in cutoff frequency between - 3V reverse and 1A forward. F,'= Fo@-av Ft 4-84