Gy, SGS-THOMSON YF WICROELECTROMICS SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS a 30 MHz = 28 VOLTS IMD -28 dB Ye COMMON EMITTER (ATF = GOLD METALLIZATION Oe = Pout = 30 W MIN. WITH 18 dB GAIN .380 4LFL (M113) epoxy sealed ORDER CODE BRANDING $D 1224-10 1224-10 PIN CONNECTION DESCRIPTION The $D1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com- 1. Collector 3. Base munications. This device utilizes emitter ballasting 2. Emitter 4. Emitter for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit VcBo Collector-Base Voltage 65 Vv VcEO Collector-Emitter Voltage 36 Vv VEBO Emitter-Base Voltage 4.0 Vv Ie Device Current 45 A Poiss Power Dissipation 80 Ww Ty Junction Temperature +200 C Tsta Storage Temperature 65 to +150 C THERMAL DATA RTH-0) Junction-Case Thermal Resistance 2.2 C/W October 1992 3 $D1224-10 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol Test Conditions Value Unit Min. | Typ. | Max. BVceo | Ic = 200mA lE = OMA 65 Vv BYVces | Ic = 200mA VBE = OV 65 _ V BVceo | Ic = 200mMA lp = OmA 35 _ _ V BVeso | le = 10mA le = OMA 40 _ _ V IcBo Voce = 30V lE = OMA _ _ 1 mA NFE VcE=5V Ic = .5A 5 | 200 | DYNAMIC Symbol Test Conditions Value Unit Min. | Typ. | Max. Pout f= 30 MHz VceE = 28 V Ico = 25 mA 30 Ww Gp f = 30 MHz Vce = 28 V Ica = 25 mA 18 20 dB IMD f = 30 MHz VceE = 28 V leq = 25 mA |-32]-28] dB Cos f= 1 MHz Voce =30V 65 pF Note: Pjy= 0.48W = kyz, SES-THOMSON $D1224-10 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0 0.125 NOM. FULL R pe F- H1 F | t pi 2 rr H LL | Liye i Ik SGS-THOMSON MICROELECTRONICS MINIMUM MAXIMUM Inches/mm Inches/mm A .220/5,59 .230/5,84 B 785/19,94 c /720/18,29 730/18,54 D .970/24,64 980/24,89 E 385/978 F .004/0,10 006/0,15 G 085/2,16 105/2,67 H 16U/4,U5 1W80/4,5/ I 280/7,11 J 240/6,10 255/6,48 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSCN Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A (7 SGS-THOMSON 3/3 JF MicROZLECTROMICS