Ordering number : ENA0342B MCH3375 P-Channel Power MOSFET http://onsemi.com -30V, -1.6A, 295m, Single MCPH3 Features * * * ON-resistance RDS(on)1=227m(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) Unit --30 V 20 V Allowable Power Dissipation ID IDP PD 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Drain Current (Pulse) PW10s, duty cycle1% When mounted on ceramic substrate (900mm2x0.8mm) --1.6 A --6.4 A This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7019A-003 Device Package Shipping note MCH3375-TL-H MCPH3 SC-70, SOT-323 3,000 pcs./reel Pb-Free and Halogen Free MCH3375-TL-H 0.15 2.0 0.25 Packing Type: TL Marking 1.6 0 to 0.02 0.65 TL 2 0.3 Electrical Connection 0.07 0.85 0.25 1 QG LOT No. LOT No. 2.1 3 3 1 : Gate 2 : Source 3 : Drain MCPH3 1 2 Semiconductor Components Industries, LLC, 2013 May, 2013 52913 TKIMTC-00002932/60612 TKIM/N0211PE TKIM TC-00002658 No. A0342-1/7 MCH3375 Electrical Characteristics at Ta=25C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--0.8A 1.3 RDS(on)1 ID=--0.8A, VGS=--10V 227 295 m RDS(on)2 ID=--0.4A, VGS=--4.5V 374 523 m RDS(on)3 ID=--0.4A, VGS=--4V 435 609 m Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time --1.2 --1 A 10 A --2.6 V S 82 pF 22 pF Crss 16 pF 4.0 ns Rise Time td(on) tr 3.3 ns Turn-OFF Delay Time td(off) 12 ns Fall Time tf 5.4 ns Total Gate Charge Qg 2.2 nC 0.36 nC Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--1.6A 0.49 IS=--1.6A, VGS=0V --0.9 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --0.8A RL=18.75 VOUT VIN D PW=10s D.C.1% G P.G 50 MCH3375 S No. A0342-2/7 MCH3375 ID -- VDS ID -- VGS --2.0 Ta=25C --4 .5V --4 .0V --1.4 --6 . --8. 0V 0V --1.6 VDS= --10V --1.8 --0.8 --0.6 --3.0V --0.4 --1.4 --1.2 --1.0 --0.8 --0.6 5C C --25 C V --3.5 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain to Source Voltage, VDS -- V 700 --0.8A 600 500 400 300 200 100 0 --2 --4 --6 --8 --10 --12 --14 Gate to Source Voltage, VGS -- V 1.0 = Ta 7 C 5 --2 C 75 5 C 25 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT16630 5 2 td(off) 10 7 5 tf td(on) 3 tr 2 1.0 --0.01 25 600 .4A 500 = VGS = --0 V, I D --4.0 .4A = --0 V, I D 5 . 4 = -VGS = --0.8A 10.0V, I D V GS= -- 400 300 200 100 --20 0 20 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT16632 60 80 100 120 140 160 IT16638 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT16631 Ciss, Coss, Crss -- VDS f=1MHz 7 5 3 2 100 Ciss 7 5 3 Coss Crss 2 2 40 IS -- VSD 1000 Ciss, Coss, Crss -- pF 3 --4.0 IT16627 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 7 --3.5 700 --0.001 SW Time -- ID 100 --3.0 800 --0.01 7 5 3 2 2 0.1 --0.01 --2.5 900 --10 7 5 3 2 Source Current, IS -- A 2 --2.0 Ambient Temperature, Ta -- C 5 3 --1.5 RDS(on) -- Ta 0 --60 --40 --16 VDS= --10V 7 --1.0 IT16637 | yfs | -- ID 10 --0.5 1000 Ta=25C ID= --0.4A 0 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- m Static Drain to Source On-State Resistance, RDS(on) -- m 800 0 --1.0 900 0 Forward Transfer Admittance, | yfs | -- S --0.9 IT16626 RDS(on) -- VGS 1000 Switching Time, SW Time -- ns --0.2 VGS= --2.5V Ta=7 5C 25C 0 Ta =7 --0.4 --0.2 --25C --1.0 Drain Current, ID -- A .0V --10 Drain Current, ID -- A --1.6 --1.2 10 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT16633 No. A0342-3/7 MCH3375 VGS -- Qg --10 --9 --8 2 --7 --6 --5 --4 --3 --2 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 10 0 3.0 IT16634 1m ID= --1.6A DC 2 0m s op Operation in this area is limited by RDS(on). --0.1 7 5 ms 10 er 3 s s 10 --1.0 7 5 3 2 --1 0 ASO IDP= --6.4A (PW10s) 3 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --10 7 5 VDS= --15V ID= --1.6A ati on Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain to Source Voltage, VDS -- V 5 7 --100 IT16639 When mounted on ceramic substrate (900mm2x0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT16640 No. A0342-4/7 MCH3375 Taping Specification MCH3375-TL-H No. A0342-5/7 MCH3375 Outline Drawing MCH3375-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A0342-6/7 MCH3375 Note on usage : Since the MCH3375 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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