52913 TKIMTC-00002932/60612 TKIM/N021 1PE TKIM TC-00002658 No. A0342-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
May, 2013
MCH3375
P-Channel Power MOSFET
–30V, –1.6A, 295mΩ, Single MCPH3
Features
• ON-resistance RDS(on)1=227mΩ(typ.)
• 4V drive
• Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS --30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID--1.6 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --6.4 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm)
0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7019A-003
Ordering number : ENA0342B
Ordering & Package Information
Device Package Shipping note
MCH3375-TL-H MCPH3
SC-70, SOT-323 3,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL Marking
Electrical Connection
1
2
3
TL
QG
LOT No.
LOT No.
1 : Gate
2 : Source
3 : Drain
MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65 0.3
0.85
0.15
12
3
0 to 0.02
MCH3375-TL-H
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MCH3375
No. A0342-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS V
DS=--30V, VGS=0V -- 1 μA
Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=--10V, ID=-- 1mA --1.2 --2.6 V
Forward T ransfer Admittance | yfs |VDS=--10V, ID=-- 0.8A 1.3 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=--0.8A, VGS=--10V 227 295 mΩ
RDS(on)2 ID=--0.4A, VGS=--4.5V 374 523 mΩ
RDS(on)3 ID=--0.4A, VGS=--4V 435 609 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 82 pF
Output Capacitance Coss 22 pF
Reverse Transfer Capacitance Crss 16 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
4.0 ns
Rise Time tr 3.3 ns
Turn-OFF Delay Time td(off) 12 ns
Fall Time tf5.4 ns
Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--1.6A 2.2 nC
Gate to Source Charge Qgs 0.36 nC
Gate to Drain “Miller” Charge Qgd 0.49 nC
Diode Forward Voltage VSD IS=--1.6A, VGS=0V --0.9 --1.5 V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --0.8A
RL=18.75Ω
VDD= --15V
VOUT
MCH3375
VIN
0V
--10V
VIN
MCH3375
No. A0342-3/7
ID -- VDS ID -- VGS
Drain Current, ID -- A
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
0
--1.6
--1.2
--1.4
--0.4
--0.8
--1.0
--0.2
--0.6
--0.4
--0.2
--0.6
0
--2.0
--1.6
--1.4
--1.8
--0.8
--1.2
--1.0
0 --0.2 --0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
IT16626
0 --1.0--0.5 --1.5 --4.0--2.5--2.0 --3.5--3.0
--25°C
IT16627
--6.0V
Ta=75
°
C
VDS= --10V
--10.0V
25
°
C
VGS= --2.5V
--8.0V
--3.0V
--3.5V
--4.0V
--4.5V
Ta=25°C
IS -- VSD
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
Drain Current, ID -- A
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
SW Time -- IDCiss, Coss, Crss -- VDS
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
Drain Current, ID -- A Drain to Source Voltage, VDS -- V
RDS(on) -- TaRDS(on) -- VGS
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Gate to Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
IS -- VSD
IT16630 IT16631
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
0.1
1.0
10
7
7
5
3
2
2
5
3
--0.1 --1.0
23 57 --10
7
--0.01 23 57 23 5
Ta= --25°C
VDS= --10V
--0.001
--0.01
2
VGS=0V
--0.01 --0.1 --1.0
23 5723 57 --10
23 57
VDD= --15V
VGS= --10V
td(on)
td(off)
tf
IT16632
0 --5 --10
3
7
5
7
5
3
2
100
1000
10
2
--30--15 --20 --25
Ciss
Coss
Crss
IT16633
10
100
1.0
2
3
7
5
7
5
2
3
Ta=75°C
25
°
C
--25
°
C
f=1MHz
tr
75°C
25
°
C
3
--0.1
7
5
2
3
7
5
2
3
7
7
5
--1.0
--10
2
3
5
0 --2 --6 --10 --16--14--4 --8 --12
200
100
400
300
500
1000
700
800
900
600
0
200
600
400
800
1000
100
500
300
700
900
0
IT16637 IT16638
ID= --0.4A --0.8A
Ta=25°C
--60 --40 --20 0 20 40 60 80 100 120 140 160
VGS= --4.0V, ID= --0.4A
VGS= --10.0V, ID= --0.8A
VGS= --4.5V, ID= --0.4A
MCH3375
No. A0342-4/7
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate to Source Voltage, VGS -- V
A S O
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
0 3.01.50.5 1.0 2.52.0
IT16634
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10 VDS= --15V
ID= --1.6A
2
3
5
7
2
--0.1
3
5
7
--1.0
--0.01 23 572357
--0.1 --1.0 23 57
--10 --100
IT16639
10ms
100ms
Operation in this area
is limited by RDS(on).
DC operation
IDP= --6.4A (PW≤10μs)
1ms
2
3
5
7
--10
100μs
ID= --1.6A
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT16640
0
020 40 60 80 100 140120
1.0
0.8
0.4
0.2
0.6
160
When mounted on ceramic substrate
(900mm2×0.8mm)
MCH3375
No. A0342-5/7
Taping Specifi cation
MCH3375-TL-H
MCH3375
No. A0342-6/7
Outline Drawing Land Pattern Example
MCH3375-TL-H
Mass (g) Unit
0.007
* For reference
mm Unit: mm
0.65 0.65
0.4
2.1
0.6
MCH3375
PS No. A0342-7/7
Note on usage : Since the MCH3375 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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