VCUT05B1-DD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 21-Jun-12 1Document Number: 81149
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in LLP1006-2M
MARKING (example only)
Bar = pin 1 marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2M package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Working range ± 5.5 V
• Low leakage current < 0.1 μA
• Low load capacitance CD = 10 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
20855
21129
12
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY
VCUT05B1-DD1 VCUT05B1-DD1-G-08 8000 8000
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VCUT05B1-DD1 LLP1006-2M P 0.72 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 3A
Peak pulse power Pin 1 to pin 2
acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP 38 W
ESD immunity Contact discharge acc. IEC61000-4-2; 10 pulses VESD ± 30 kV
Air discharge acc. IEC61000-4-2; 10 pulses VESD ± 30
Operating temperature Junction temperature TJ- 55 to + 145 °C
Storage temperature Tstg - 55 to + 150 °C
VCUT05B1-DD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 21-Jun-12 2Document Number: 81149
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT05B1-DD1
The VCUT05B1-DD1 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT05B1-DD1 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like and ESD-strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --5.5V
Reverse voltage at I = 0.1 μA VR5.5 - - V
Reverse current at V = 5.5 V IR--0.1μA
Reverse breakdown voltage at I = 1 mA VBR 67.58.5V
Reverse clamping voltage at IPP = 1 A VC- 8.3 10.5 V
at IPP = IPPM = 3 A VC- 10.3 12.5 V
Capacitance at V = 0 V; f = 1 MHz CD-1013pF
at V = 2.5 V; f = 1 MHz CD-8-pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current IESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VR (V)
CD (pF)
21792
0
2
4
6
8
10
12
0123456
f = 1 MHz
IR (µA)
VR (V)
21793
10-2 10-1 110
1102103104105
0
1
2
3
4
5
6
7
8
9
BiAs-mode
VCUT05B1-DD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 21-Jun-12 3Document Number: 81149
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Fig. 6 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 7 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
I
PP
(A)
V
C
(V)
21794
0
2
4
6
8
10
12
012345
VC
Measured acc. IEC 61000-4-5
(8/20 µs - wave form)
t (ns)
VC-ESD (V)
21795
- 30
- 20
- 10
0
10
20
30
40
50
60
- 10 0 10 20 30 40 50 60 70 80 90
Acc. IEC 61000-4-2
± 8 kV
contact discharge
V
ESD
(kV)
V
C-ESD
(V)
21796
0
50
100
150
200
250
0 5 10 15 20 25 30
Acc. IEC 61000-4-2
contact discharge
VC-ESD
VCUT05B1-DD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 21-Jun-12 4Document Number: 81149
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2M
LLP1006-xx
Top view Pad layout - view from top
seen at bottom side
Pin 1 mark
Unreeling direction
Bidirectional
22651
Document no.: S8-V-3906.04-017 (4)
Created - Date: 12. September 2007
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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