TYPES TIP31, TIP31A, TIP31B, TIP3IC N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SP EED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C e 40 Wat 25C Case Temperature 3A Rated Collector Current e mechanical data Min ft of 3 MHz at 10 V, 500 mA THE COLLECTOR IS iN ELECTRICAL CONTACT MECHANICAL INTERCHANGEABILITY OF TIP31 PLASTIC PACKAGE WITH TO-68 OUTLINE THIS PORTION OF LEADS, FREE OF FLASH f * WITH THE MOUNTING TAB COLLECTOR # c= EMIT 0570 (70-66 DIMENSIONS) 0210 0.036 0196 Doe 0.118 086 ALL DIMENSIONS ARE IN INCHES ig t Tur t t i ! ~ a gata oo CASE TEMPERATURE 9.030 MIN MEASUREMENT POINT (2 PLACES) RAD (2 PLACES! absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage . Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage . Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current Safe Operating Region at (or below) 25 c Case Temperature . Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3) an Continuous Device Dissipation at (or below} 25 c Free- Air Temperature (See Note 4} Unclamped Inductive Load Energy (See Note 5) Operating Collector Junction Temperature Range Storage Temperature Range . Lead Temperature 1/8 Inch from Case for 10 Seconds NOTES: 1 2. This value applies for ty, < 0.3 ms, duty cycle < 10%. 3, 4, Derate linearly to 150C free-air temperature at the rate of 16 5. Vge2 = 9 V, Rg = 0.1 2, Veg = 10 V. Energy 121/2. TIP31 =TIP31A TIP31B TIP31C 40V 60V 80V 100 V 40V 60 V 80V 100 V .___ 5 V ______ .\_\____ 3A ______> _ 5A ____ <.-_\_ 1A _ > <~ See Figure 5 -___> <_____- 40 w____ _ 2wW___ << _- 32 mJ -____ <4 -65C to 150C ~<4_ -65C to 150C _m <_ 260C _____ . This vatue applies when the base-emitter diode is open-circuited. Derate linearly to 150 case temperature at the rate of 0.32W/C. mw/c. . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2, L = 20 mH, Rapg2 ~ 100 2, TEXAS INSTRUMENTS 2-177TYPES TIP31, TIP31A, TIP31B, TIP3IC N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS 7131 TIPSIA T1PS18 TIPSIC UNIT MIN MAX | MIN MAX | MIN MAX | MIN MAX Coil -Emitt Ig =3 Ig = 9, ViBRICEO jector-Emitter c=30mA 8 40 60 20 100 v Breakdown Voltage See Note 6 Collector Cutoff Vce = 30 V, Ig =0 0.3 0.3 IceEO mA Current Vce = 60V, Ig =0 0.3 0.3 Voce = 40V, VBE = 0 0.2 Collector Cutoff Voge = 60 V, Vee =0 0.2 CES mA Current Vce = 80V, Vee =0 0.2 VcE = 100 V, Vee =90 0.2 Emitter Cutoff t Veg =5V, Ic =0 1 1 1 1 [mA EBO Current een c Voce =4V, Ic=1A, Static Forward San tes @ and 7 25 25 25 25 hee Current Transfer Vv, e Ty IDtaA Ratio Cen e ene 10 50] 10 sof] 10 50] 10 50 See Notes 6 and 7 B itt VcE = IG=3A, Vee jase-E mitter CE =4V, Cc 18 1.8 18 18} Vv Voltage See Notes 6 and 7 Collector-E mitt Ig = 375 mA, IG=3A, VeeGat) oo et B= 376m e=3 1.2 1.2 1.2 12 |v Saturation Voltage See Notes 6 and 7 Smali-Signai Co -E mitt Voce = 10 V, Ig = 0.5 A, he mmon-E mitter CE = 10 V, c 20 20 20 20 Forward Current f=1kHz Transfer Ratio Smati-Signal C -E mitt VceE = : Ic =0.5A, hel oramon-E mitter CE = 10V, Cc S 3 3 3 3 Forward Current f= 1 MHz Transfer Ratio NOTES: 6. These parameters must be measured using pulse techniques. ty = 300 vs, duty cycle < 2%. 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MAX | UNIT Reyc Junction-to-Case Thermal Resistance 3.125 CAV Resa Junction-to-Free-Air Thermat Resistance 62.5 switching characteristics at 25C case temperature PARAMETER TEST CONDITIONSt TYP | UNIT ton Tum-On Time fomlA, {p(1) = 1OOmMA, = IBfgy = 100 mA, 0.8 Toff Turn-Off Time VeE(o) 2 -43V, RL=302, See Figure 1 2 | tVoltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2-178 TEXAS INSTRUMENTSTYPES TIP31, TIP31A, TIP31B, TIP3IC N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION = snout MONITOR outrur MONITOR Feary 362 tur + baleen 86.0 STI RE 2N5385, INSTA NOTA INDIA 5, at Ppe2 = 5612 RL + 3087 270 pF 208 - f Voen Vaa2" 434 + . - Vpei = 10 AQuust FOR 77. Von = 8.5 VAT NOTES: A. moo (INPUT INPUT MCNITOR TEST CIRCUIT Vgen is a 30-V pulse (from 0 V) into a 50-9 termination. On 2N5385 Vee1* tov = Rear wan Apez 1009 Vea270 . Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. FIGURE 1 INPUT QuTeuT VOLTAGE WAVEFORMS INDUCTIVE LOAD SWITCHING (See Note Al Vece* 10 = Ay-otn = Ie MONITOR TEST CIRCUIT COLLECTOR CURRENT Q ViBRICER COLLECTOR VOLTAGE . The Vgen waveform is supplied by a generator with the following characteristics: tp < 75 ns, te < 15 ns, Zoyy = 50 2, ty = 20 us, duty cycle < 2%. . Waveforms are monitorec| on an oscilloscope-with the following characteristics: ty < 15 ns, Rin = 10 MYL, Cin < 11.5 pF. ty 4s (See Note B} VOLTAGE AND CURRENT WAVEFORMS NOTES: A. U1 and L2 are 10 mH, 0.71 2, Chicago Standard Transformer Corporation C-2688, ar equivalent, Input pulse width is increased until icy = 7.8 A. FIGURE 2 TEXAS INSTRUMENTS 2-179TYPES TIP31, TIPSIA, TIP31B, TIP3IC N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS THERMAL I[NFORMATION STATIC FORWARD CURRENT TRANSFER RATIO vs DISSIPATION I COLLECTOR CURRENT ss 1ON DERATING CURVE 1000 700 400 200 100 70 hreStatic Forward Current Transfer Ratio PyMaximum Continuous Device DissipationW 1 0.001 0,004 0.01 0.04 0.1 0.4 1 4 10 0 25 50 75 100 125 150 {Collector CurrentA Tc~Case Temperature--C FIGURE 3 FIGURE 4 NOTES: 6. These parameters must be measured using pulse techniques. ty * 300 us, duty cycle < 2%. 7. These parameters are measured with voltage- sensing contacts separate fram the current- carrying contacts, MAXIMUM SAFE OPERATING REGION 10 7 Note 8 4 2 F 1 |tw = 300 us, d = 0.1= 07 = 1ms,d = 0.1 = 10% 0.4 [two 10.ms,d=0.1= 38 "Ipc OPERATION $ 8 0.2 tT. < 25C 8 0.1 H 0.07 2 TIP3I1A 0.04 1P318 TIP3IC 0.02 0.01 1 2 4 710 20 40 70100 200 400 VceECollector-E mitter VoitageV FIGURE 5 NOTE 8: This combination of maximum voltage and current may be achieved onty when switching from saturation to cutoff with a clamped inductive load, TI cannot assume any tesponsibility for any circuits shown 2-180 Texas INSTRUMENTS or tepresent that they ae. fee from potent intingement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TI IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIB3-4 SILIZIUM-KOMPLEMENTARE-LEISTUNGSTRANSISTOREN (Allgemeine und NF-Anwendungen) SILICON COMPLEMENTARY POWER TRANSISTORS (General and Low-frequency Applications) Prot @ Typ To = 25 C VCEO lcp hee @ Ic type (100 C) min max min max NPN PNP Ww A A BD 239 BD 240 30 45 2 40 0,2 BD 239A BD 240A 30 60 2 40 0,2 BD 239 B BD 240B 30 80 2 40 0,2 BD 239 C BD 240C 30 100 2 40 0,2 BD 241 BD 242 40 45 3 25 1 BD 241A BD 242A 40 60 3 25 1 BD 241B BD 2428 40 80 3 25 1 BD 241C BD 242C 40 100 3 25 1 BD 243 BD 244 65 45 6 30 9,3 BD 243A BD 244A 65 60 6 30 0,3 BD 2438 BD 244B 65 80 6 30 0,3 BD 243 C BD 244C 65 100 6 30 0,3 BD 245 BD 246 80 45 10 40 1 BD 245A BD 246A 80 60 10 40 1 BD 2458 BD 246B 80 80 10 40 1 BD 245C BD 246C 80 100 10 40 1 BD 249 BD 250 125 45 25 25 1,5 BD 249A BD 250A 125 60 25 25 1,5 BD 249 B 8D 250B 125 80 25 25 15 BD 249C BD 250C 125 100 25 25 1,5 TIP 29 TIP 30 30 40 1 40 200 0,2 TIP 29A TIP 30A 30 60 1 40 200 0,2 TIP 29B TIP 308 30 80 1 40 200 0,2 TIP 29C Tip 30C 30 100 1 40 200 0,2 TIP 31 TIP 32 40 40 3 25 100 1 TIP31A TIP 32 A 40 60 3 25 100 1 TIP 31B TIP 32B 40 80 3 25 100 1 TIP 31C TIP 32C 40 100 3 25 100 1 TIP 33 TIP 34 80 40 10 40 125 1 TIP 33 A TIP 34A 80 60 10 40 125 1 TIP 33 B TIP 348 80 80 10 40 125 1 TIP 33.6 TIP 34 80 100 10 40 125 1 TAP 35 TIP 36 90 40 25 25 100 1,5 TIP 35A TIP 386A 90 60 25 25 100 15 TEXAS INSTRUMENTSfr Ices @ VCE Gehause Anwendungen, Bemerkungen mn (IcEQ} package applications, remarks Mz HA Vv TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P Verstarker, Schalter TO-66P amplifier, switch TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 3 200 40 TO-66P Verstarker, Schalter, komplementar zu TIP 30 amplifier, switch, complementary to TIP 30 3 200 60 TO-66P Verstarker, Schaiter, komplementar zu TIP 30 A amplifier, switch, complementary to TIP 30 A 3 200 80 TO-66P Verstarker, Schalter, komplementar zu TIP 30 B amplifier, switch, complementary to TIP 30 B 3 200 100 TO-66P Verstarker, Schalter, komplementar zu TIP 30 C amplifier, switch, complementary to TIP 30 C 3 300 40 TO-66P Verstarker, Schalter, komplementar zu TIP 32 amplifier, switch, complementary to TIP 32 3 300 60 TO-3P Verstarker, Schalter, komplementar zu TIP 32 A amplifier, switch, complementary to TIP 32 A 3 300 80 TO-3P Verstarker, Schalter, komplementar zu TIP 32 B amplifier, switch, complementary to TIP 32 B 3 300 100 TO-3P Verstarker, Schalter, komplementar zu TIP 32 C amplifier, switch, complementary to TIP 32 C 3 400 40 TO-3P Verstarker, Schalter, komplementar zu TIP 34 amplifier, switch, complementary to TIP 34 3 400 60 TO-3P Verstarker, Schalter, komplementar zu TIP 34 A amplifier, switch, complementary to TIP 34 A 3 400 80 TO-3P Verstarker, Schalter, komplementar zu TIP 34 B amplifier, switch, complementary to TIP 34 B 3 400 100 TO-3P Verstarker, Schalter, komplementar zu TIP 34 C amplifier, switch, complementary to TIP 34 C 3 700 40 TO-3P Verstarker, Schalter, komplementar zu TIP 36 amplifier, switch, complementary to TIP 36 3 700 60 TO-3P Verstarker, Schalter, komplementar zu TIP 36 A amplifier, switch, complementary to TIP 36 A TEXAS INSTRUMENTS 3-5