26/7/99
DB92275A-AAS/A2
0.26
20.32
19.32 4.0
3.0
0.5
7.62
13°
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
24
3
0.26
13°
Max
2.54
10.16
0.26
7.62
10.2
9.5
ISP817X
ISP817
ISP827X
ISP827
3.0
10.16
9.16 4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13°
Max
0.5 0.26
2.54
ISP847X
ISP847
Dimensions in mm
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
lCertified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP817, ISP827, ISP847 series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio (50% min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh BVCEO ( 35Vmin )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
3.35
5.08
4.08
1 8
1.2
0.6 1.4
0.9
ISP817X, ISP827X, ISP847X
ISP817, ISP827, ISP847
1
2
3
7
8
16
15
10
9
6 11
5 12
14
413
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
DB92275A-AAS/A2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 20mA
Reverse Voltage (VR) 6 VIR = 10µA
Reverse Current (IR)10 µA VR = 6V
Output Collector-emitter Breakdown (BVCEO)35 VIC = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847 50 600 %5mA IF , 5V VCE
ISP817A,ISP827A,ISP847A 80 160 %5mA IF , 5V VCE
ISP817B,ISP827B,ISP847B 130 260 %5mA IF , 5V VCE
ISP817C,ISP827C,ISP847C 200 400 %5mA IF , 5V VCE
ISP817D,ISP827D,ISP847D 300 600 %5mA IF , 5V VCE
ISP817GB, ISP827GB, ISP847GB 100 600 %5mA IF , 5V VCE
ISP817BL, ISP827BL, ISP847BL 200 600 %5mA IF , 5VVCE
Collector-emitter Saturation VoltageVCE (SAT) 0.2 V20mA IF , 1mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 4 18 µsVCE = 2V ,
Output Fall Time tf 3 18 µsIC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
26/7/99
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
DB92275A-AAS/A2
26/7/99
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = 20mA
IC = 1mA
Forward current IF (mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
Current Transfer Ratio vs. Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
TA = 25°C
280
320
IF = 5mA
Forward current IF (mA)
Collector-emitter saturation voltage V CE(SAT) (V)
Ic =1mA
3mA
5mA
10mA
15mA
0 5 10 15
6
VCE = 5V
TA = 25°C
10mA
15mA
20mA
30mA
50mA
