LITE-ON SEMICONDUCTOR MBR730 thru MBR760 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 7.5 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C D A K E PIN 1 2 E F G I TO-220AC MIN. MAX. 14.22 15.88 10.67 9.65 3.43 2.54 6.86 5.84 9.28 8.26 6.35 14.73 12.70 5.33 4.83 0.51 1.14 I J 0.30 0.64 K 3.53 4.09 L 3.56 4.83 M 1.14 1.40 2.92 N 2.03 All Dimensions in millimeter F MECHANICAL DATA Case : TO-220AC molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any DIM. A B C D J H N PIN 1 CASE PIN 2 G H MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL MBR730 MBR735 MBR740 MBR745 MBR750 MBR760 UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRMS VDC Maximum Average Forward Rectified Current (See Fig.1) @TC=125 C I(AV) 7.5 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) IFSM 150 A Voltage Rate of Change (Rated VR ) dv/dt 10000 V/us IF =7.5A @ IF =7.5A @ IF =15A @ IF =15A @ TJ =25 C TJ =125 C TJ =25 C TJ =125 C Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ =125 C Typical Thermal Resistance (Note 2) Maximum Forward Voltage (Note 1) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range 30 21 30 35 24.5 35 40 28 40 45 31.5 45 50 35 50 60 42 60 V V V VF 0.57 0.84 0.72 0.75 0.65 - V IR 0.1 15 0.5 50 mA R0JC CJ 3.5 400 C/W TJ TSTG -55 to +150 -55 to +175 C C NOTES : 1. 300us Pulse Width, Duty Cycle 2% 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. pF REV. 3, 13-Sep-2001, KTHA02 RATING AND CHARACTERISTIC CURVES MBR730 thru MBR760 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 0 25 75 50 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 150 100 50 175 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 TJ = 75 C 0.01 TJ = 25 C 0.001 10 MBR730 ~ MBR745 MBR750 ~ MBR760 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 3, 13-Sep-2001, KTHA02