SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001 ✪
COMPLEMENTARY TYPE – BSP33
PARTMARKING DETAIL – BSP43
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 90 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Base Current IB100 mA
Power Dissipation at Tamb
=25°C PTOT 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 90 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 80 V IC=10mA *
Emitter-Base Breakdown
Voltage V(BR)EBO 5V
IE=10µA
Collector Cut-Off Current ICBO 100
50 nA
µAVCB=60V
VCB=60V, Tamb
=125°C
Collector-Emitter
Saturation Voltage VCE(sat) 0.25
0.5 V
VIC =150mA, IB =15mA
IC =500mA, IB =50mA
Base-Emitter
Saturation Voltage VBE(sat) 1.0
1.2 V
VIC =150mA, IB =15mA
IC =500mA, IB =50mA
Static Forward
Current Transfer Ratio hFE 30
100
50 300 IC =100µA, VCE =5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
Output Capacitance Cobo 12 pF VCB =10V, f=1MHz
Input Capacitance Cibo 90 pF VEB =0.5V, f=1MHz
Transition Frequency fT100 MHz IC=50mA, VCE=10V
f =35MHz
Turn-On Time Ton 250 ns VCC
=20V, IC =100mA
IB1 =IB2 =5mA
Turn-Off Time Toff 1000 ns
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
BSP43
C
C
E
B
TBA
