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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC971
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz
Features
Functional Diagram General Description
The HMC971 is a broadband high isolation PIN
SPDT MMIC chip. Covering 18 to 40 GHz, the switch
features >55 dB isolation at lower frequencies and >45
dB at higher frequencies. The switch operates using
complementary negative control voltage logic lines of
0/-10V. All data is measured with the chip in a 50 Ohm
test xture connected via 0.025 mm (1 mil) diameter
wire bonds of minimal length 0.31 mm (12 mils).
High Isolation: 40 dB
Low Insertion Loss: 1.6 dB
High Linearity: +43 dBm Input IP3
High Power Handling: +34 dBm Input P1dB
Die Size: 2.21 x 1.26 x 0.1 mm
Electrical Specications, TA = +25 °C, With 0/-10V Control, 50 Ohm System
Typical Applications
The HMC971 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
v01.0711
Parameter Frequency Min. Typ. Max. Units
Insertion Loss RFC to RF1
18 - 28 GHz
28 - 32 GHz
32 - 40 GHz
1.0
1.3
1.5
1.3
1.7
1.9
dB
dB
dB
Insertion Loss RFC to RF2
18 - 28 GHz
28 - 32 GHz
32 - 40 GHz
1.0
1.3
1.5
1.3
1.7
1.9
dB
dB
dB
Isolation 34 40 dB
Return Loss “On State” 18 - 30 GHz
30 - 40 GHz
17
12
dB
dB
Input Power for 1 dB Compression 34 dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 43 dBm
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC971
v01.0711
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz
-3
-2.4
-1.8
-1.2
-0.6
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
+25C
+85C
-55C
FREQUENCY (GHz)
INSERTION LOSS (dB)
-80
-70
-60
-50
-40
-30
-20
-10
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
RFC/RF1
RFC/RF2
RF1/RF2 RF1 on
RF1/RF2 RF2 on
FREQUENCY (GHz)
ISOLATION (dB)
-3
-2.5
-2
-1.5
-1
-0.5
0
20 22 24 26 28 30 32 34
INPUT POWER (dBm)
INSERTION LOSS (dB)
-3
-2.4
-1.8
-1.2
-0.6
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
+25C
+85C
-55C
FREQUENCY (GHz)
INSERTION LOSS (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
RFC
RF1
RF2
FREQUENCY (GHz)
RETURN LOSS (dB)
-3
-2.5
-2
-1.5
-1
-0.5
0
20 22 24 26 28 30 32 34
INPUT POWER (dBm)
INSERTION LOSS (dB)
Insertion Loss vs. Pin,
RFC to RF1, F = 25 GHz
Insertion Loss vs. Pin,
RFC to RF2, F = 25 GHz
Isolation Return Loss
Insertion Loss, RFC to RF1 Isolation Loss, RFC to RF2
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Absolute Maximum Ratings
RF Input Power 35 dBm
Negative Control Voltage -15 V
Positive Bias Current 80 mA
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Equivalent Schematic
HMC971
v01.0711
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz
IP3 RFC to RF1 and RFC to RF2
Control Voltages
State RFC - RF1 RFC - RF2 CNTL1 CNTL2
1 IL Isol -10V +30mA / 1.29V
2 Isol IL +30mA / 1.29V -10V
[Note 1] Diodes are reversed biased for the insertion path.
[Note 2] Diodes are forward biased for the isolation path. The forward voltage
across the diodes is 1.29V.
30
40
50
60
70
20 22 24 26 28 30 32 34 36 38 40
RFC/RF1
RFC/RF2
FREQUENCY (GHz)
IP3 (dBm)
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC971
v01.0711
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz
SWITCHES - CHIP
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Assembly Diagram
HMC971
v01.0711
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1 RF1 RF signal contains DC control voltage.. External DC blocking
capacitor is required.
2 RFC RF common port, this port is AC coupled.
3 RF2 RF signal contains DC control voltage. External DC blocking
capacitor is required.
4 CNTL1 Switch control input, see “Control Voltages” table.
5 CNTL2 Switch control input, see “Control Voltage” table.
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076
mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and
a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultra-
sonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate.
All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
HMC971
v01.0711
PIN MMIC HIGH ISOLATION
SPDT SWITCH, 18 - 40 GHz