Power management (dual transistors) VT6Z2 0.14 VMT6 1.2 0.1 (5) (4) 0.92 0.1 zFeatures Very small package with two transistors. 0.5 0.1 1.2 0.1 (6) 0 ~ 0.05 0.14 (1) (2) (3) 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 zApplications Switch, LED driver Abbreviated symbol : Z2 UNIT : mm Each lead has same dimensions. zPackaging specifications Package Type 0.2 0.1 zDimensions (Unit : mm) 0.2 0.1 zStructure Silicon epitaxial planar transistor zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) Tr1 (4) Tr2 VT6Z2 (1) (2) (3) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1) z Absolute maximum ratings (Ta=25C) <Tr1> (PNP) Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -100 mA 1 -200 mA Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Parameter Collector current ICP 1 Pw=1mS Single pulse <Tr2> (NPN) Parameter 100 mA 200 mA Limits 150 Unit mW 120 mW 150 -55 to +150 C IC Collector current ICP 1 1 Pw=1mS Single pulse <Tr1 and Tr2> Symbol Parameter Total Power dissipation Element PD Junction temperature Tj Storage temperature Tstg 2 C 2 Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.10 - Rev.A VT6Z2 Data Sheet zElectrical characteristics (Ta=25C) <Tr1> (PNP) Parameter Collector-emitter breakdown voltage BVCEO Min. -50 Collector-base breakdown voltage Emitter-base breakdown voltage BVCBO -50 - - - - V V IC= -1mA IC= -50A BVEBO -5 - - V ICBO - -0.1 -0.1 A IEBO - - IE= -50A VCB= -50V -0.15 - 300 -0.40 V Collector cut-off current Emitter cut-off current Symbol VCE(sat) - - DC current gain hFE 120 Transition frequency fT Cob - - Symbol BVCEO Collector-emitter saturation voltage Output capacitance Typ. Max. Unit A 560 - 2 - - MHz pF Min. Typ. Max. Unit Conditions VEB= -5V IC= -50mA, IB= -5mA VCE= -6V, IC= -1mA VCE= -10V, IE=-10mA, f=100MHz VCB= -10V, IE=0A, f=1MHz <Tr2> (NPN) Parameter Conditions Collector-base breakdown voltage Emitter-base breakdown voltage BVCBO 50 50 - - - - V V IC=1mA IC=50A BVEBO 5 ICBO - - - - 0.1 0.1 0.30 V Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage A A V IE=50A VCB=50V Collector-emitter breakdown voltage VCE(sat) - - - DC current gain hFE 120 Transition frequency Output capacitance fT Cob - - www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. IEBO 0.10 - 350 1.6 2/4 560 - - - MHz pF VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=10V, IE=-10mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2009.10 - Rev.A VT6Z2 Data Sheet zElectrical characteristics curves <Tr1> (PNP) IB=450uA IB=400uA IB=350uA IB=300uA -50 VCE =2V Ta=125 C 25 C -55 C -10 -1 -0.1 -40 IB=200uA -30 IB=150uA -20 IB=100uA -10 IB=50uA -0.6 -0.8 0 -1 -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB = 20/1 IC/IB = 10/1 -0.1 -2 -3 -4 IB=0uA -1 -10 -100 COLLECTOR CURRENT : IC (mA) 10 -0.1 -5 IC/IB = 10/1 Ta=125 C 25 C -55 C -0.1 -0.01 -0.01 Ta=125 C 25 C -55 C -1 -10 -100 COLLECTOR CURRENT : IC (mA) -1 -10 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) -1 Ta=25 C -1 TRANSITION FREQUENCY :fT (MHz) -0.4 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25 C 0 -0.2 VCE=5V 100 -0.01 0 1000 IB=250uA DC CURENT GAIN : hFE -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) IB=500uA 1000 VCE = 10V Ta = 25 C 100 10 -0.1 -1 -10 -100 -1000 EMITTER CURRENT IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0.1 Ta=25 C f=1MHz IE=0 IC=0 -0.01 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.10 - Rev.A VT6Z2 Data Sheet <Tr2> (NPN) 1 0.1 VCE =2V IB=300uA 40 IB=250uA IB=200uA 20 IB=150uA IB=100uA 0.4 0.6 0.8 0 1 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.1 0.01 1 10 100 COLLECTOR CURRENT : IC (mA) 2 3 4 Ta=125C 25C -55C 0.1 5 1000 IC/IB= 10/1 Ta=125C 25C -55C 0.1 0.01 1 10 100 COLLECTOR CURRENT : IC (mA) 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25C IC/IB = 20/1 IC/IB =10/1 1 100 10 IB=0A 1 TRANSITION FREQUENCY :fT (MHz) 0.2 VCE=5V IB=50uA Ta=25C 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 30 10 0.01 0 1000 IB=350uA DC CURENT GAIN : hFE Ta=125C 25C -55C 10 IB=450uA IB=500uA IB=400uA 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 VCE = 10V Ta=25C 100 10 0.1 1 10 100 1000 EMITTER CURRENT : IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0 Ta=25C f=1MHz IE=0 IC=0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. 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