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c 2009 ROHM Co., Ltd. All rights reserved. 2009.10 - Rev.A
Power management (dual transistors)
VT6Z2
zStructure zDimensions (Unit : mm)
Silicon epitaxial planar transistor
zFeatures
Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications zInner circuit
Package
Code
Taping
Basic ordering
unit (pieces)
T2R
8000
VT6Z2
Type
z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)
Symbol Limits Unit
V
CBO
−50 V
−50 V
V
V
CEO
V
EBO
−5
mA−200
I
C
I
CP
mA−100
∗1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
∗1
Pw=1mS Single pulse
Parameter
<Tr2> (NPN)
Symbol Limits Unit
VCBO 50 V
50 V
V
VCEO
VEBO 5
mA200
IC
ICP
mA100
∗1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
∗1 Pw=1mS Single pulse
Parameter
<Tr1 and Tr2>
Tj150 °C
Tstg −55 to +150 °C
PD120
150 mW
mW
∗2
Junction temperature
Storage temperature
Power dissipation
∗2
Each terminal mounted on a recommended land
Total
Element
Symbol Limits Unit
Parameter
(6) (5) (4)
(1) (3)
(2)
Tr
2
Tr
1
(1) Emitter
(2) Base
(3) Collector
(4) Emitter
(5) Base
(6) Collector
(Tr1
)
(Tr1
)
(Tr2
)
(Tr2
)
(Tr2
)
(Tr1
)
1.2
±
0.1
1.2
±
0.1
0.8
±
0.1
0.92
±
0.1
0.4 0.4
0.16
±
0.05
0 ~ 0.05
0.13
±
0.05
(1) (3)(2)
0.14
0.5
±
0.1
0.2
±
0.1
Each lead has same dimensions.
0.14
(6) (4)(5)
0.2
±
0.1
UNIT : mm
VMT6
Abbreviated symbol : Z2
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.10 - Rev.A
Data Sheet VT6Z2
zElectrical characteristics (Ta=25°C)
<Tr1> (PNP)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
−50
−50
−5
−
−
−
−
−
−
−
−
−
−
300
−0.15
2
−
−
−
−0.1
−0.1
−0.40
−
−
V
V
V
µA
µA
V
MHz
pF
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −50V
V
EB
= −5V
I
C
= −50mA, I
B
= −5mA
h
FE
120 −560 −
V
CE
= −10V, I
E
=−10mA, f=100MH
z
V
CE
= −6V, I
C
= −1mA
V
CB
= −10V, I
E
=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
<Tr2> (NPN)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
50
50
5
−
−
−
−
−
−
−
−
−
−
350
0.10
1.6
−
−
−
0.1
0.1
0.30
−
−
V
V
V
µA
µA
V
MHz
pF
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=5V
I
C
=50mA, IB=5mA
hFE 120 −560 −
VCE=10V, IE=−10mA, f=100MHz
VCE=6V, I
C
=1mA
VCB=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
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Data Sheet VT6Z2
zElectrical characteristics curves
<Tr1> (PNP)
0
-10
-20
-30
-40
-50
0-1-2-3-4-5
COLLE CTOR CURRENT : I
C
(mA)
Ta=25 C
-0.01
-0.1
-1
-10
-100
0 -0.2 -0.4 -0.6 -0.8 -1
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
Ta=125 C
    25 C
   -55 C
-0.01
-0.1
-1
-1 -10 -100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
I
C
/I
B
= 10/1
Ta=125 C
25 C
-55 C
-0.01
-0.1
-1
-1 -10 -100
COLLECTOR CURRENT : I
C
(mA)
Ta=25 C
I
C
/I
B
= 20/1
I
C
/I
B
= 10/1
I
B
=250uA
I
B
=200uA
I
B
=150uA
I
B
=100uA
I
B
=50uA
V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE :
I
B
=0uA
10
100
1000
-0.1 -1 -10 -100
COLLECTOR CURRENT : I
C
(mA)
DC CURENT GAIN : h
FE
V
CE
=5V
0.1
1
10
100
-0.01 -0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cob (pF)
Cib (pF)
Ta=25 C
f=1MHz
I
E
=0
I
C
=0
Cob
Cib
10
100
1000
-0.1 -1 -10 -100 -1000
EMITTER CURRENT ：I
E
(mA)
TRANSITION FREQUENCY :f
T
(MHz)
V
CE
= 10V
Ta = 25 C
I
B
=500uA I
B
=300uA
I
B
=350uA
I
B
=400uA
I
B
=450uA
Ta=125 C
25 C
-55 C
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.10 - Rev.A
Data Sheet VT6Z2
<Tr2> (NPN)
0.01
0.1
1
10
100
0 0.80.60.40.2 1
0.01
0.1
1
1 10 100
0.01
0.1
1
1 10 100
0
10
20
30
40
50
012345
I
B
=350uA
I
B
=300uA
I
B
=250uA
I
B
=200uA
I
B
=150uA
I
B
=100uA
I
B
=50uA
I
B
=0A
I
B
=500uA
I
B
=450uA
I
B
=400uA
10
100
1000
0.1 1 10 100
0
1
10
100
0.01 0.1 1 10 100
Cob
Cib
10
100
1000
0.1 1 10 100 1000
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE :
V
CE
(V) COLLECTOR CURRENT : I
C
(mA)
DC CURENT GAIN : h
FE
TRANSITION FREQUENCY :f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cob (pF)
Cib (pF)
Ta=25
°C
f=1MHz
I
E
=0
I
C
=0
I
C
/I
B
= 20/1
I
C
/I
B =
10/1
Ta=125°C
25°C
-55°C
V
CE
= 10V
Ta=25
°C
I
C
/I
B
= 10/1
Ta=125°C
25°C
-55°C
Ta=25
°C
Ta=25
°C
V
CE
=2V
Ta=125°C
25°C
-55°C
V
CE
=5V
R0039
A
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