© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17 1Publication Order Number:
BD237/D
BD237G (NPN),
BD234G,BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
•High DC Current Gain
•Epoxy Meets UL 94 V0 @ 0.125 in
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
VCEO 45
80
Vdc
Collector−Base Voltage
BD234G
DB237G, BD238G
VCBO 60
100
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC2.0 Adc
Base Current IB1.0 Adc
Total Device Dissipation
@ TC = 25_CPD25 W
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 _C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 5.0 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
Y = Year
WW = Work Week
BD23x = Device Code
x = 4, 7 or 8
G = Pb−Free Package
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2.0 AMPERES
POWER TRANSISTORS
25 WATTS
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
ORDERING INFORMATION
3
BASE
1
EMITTER
COLLECTOR
2, 4
3
BASE
1
EMITTER
COLLECTOR
2, 4
PNP NPN
TO−225
CASE 77−09
STYLE 1
123
YWW
BD23xG
BD237G (NPN), BD234G, BD238G (PNP)
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
BD237G, BD238G
BD234G
V(BR)CEO
80
45 −
−
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
BD237G, BD238G
(VCB = 60 Vdc, IE = 0)
BD234G
ICBO
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V) hFE1
hFE2 40
25 −
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.6 Vdc
Base−Emitter On Voltage (Note 1)
(IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.3 Vdc
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT3.0 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Active Region Safe Operating Area
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.1
3 10 30 100
0.3
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5 ms
1
100 ms
1 ms
BD237
BD236
The Safe Operating Area Curves indicate IC−VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
BD237G (NPN), BD234G, BD238G (PNP)
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3
1000
IC, COLLECTOR CURRENT (mA)
10
100 TJ = + 150°C
TJ = - 55°C
VCE = 2.0 V
hFE, DC CURRENT GAIN (NORMALIZED)
700
500
300
200
70
50
30
20
TJ = + 25°C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500 0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
VBE @ VCE = 2.0 V
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
qJC = 3.5°C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
00.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
IC = 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
TJ = 25°C
Figure 3. Current Gain Figure 4. “On” Voltages
Figure 5. Thermal Response
BD237G (NPN), BD234G, BD238G (PNP)
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
BD234G TO−225
(Pb−Free) 500 Units / Box
BD237G TO−225
(Pb−Free) 500 Units / Box
BD238G TO−225
(Pb−Free) 500 Units / Box
BD237G (NPN), BD234G, BD238G (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
ec
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
123321
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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P
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BD237/D
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