Voltage Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Maximum I2√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I2√t
NTE5567, NTE5568, NTE5569 101.8KA 2√s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 72.1KA2√s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low Level Value of Threshold Voltage (16.7% x π x IT(AV) < I < π x IT(AV)), VT(TO)1
NTE5567, NTE5568, NTE5569 0.94V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 1.02V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Level Value of Threshold Voltage (π x IT(AV) < I < 20 x π x IT(AV)), VT(TO)2
NTE5567, NTE5568, NTE5569 1.08V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 1.17V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low Level Value of On–State Slope Resistance (16.7% x π x IT(AV) < I < π x IT(AV)), rt1
NTE5567, NTE5568, NTE5569 4.08mΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 4.78mΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Level Value of On–State Slope Resistance (π x IT(AV) < I < 20 x π x IT(AV)), VT(TO)2
NTE5567, NTE5568, NTE5569 3.34mΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 3.97mΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum On–State Voltage (Ipk = 157A, TJ = +25°C), VTM
NTE5567, NTE5568, NTE5569 1.60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5571 1.78V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Holding Current (TJ = +25°C, Anode Supply 22V, Resistive Load, Initial IT = 2A), IH200mA.
Latching Current (Anode Supply 6V, Resistive Load), IL400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Rate of Rise of Turned–On Current, di/dt
(VDM = Rated VDRM, Gate Pulse = 20V, 15Ω, tp = 6µs, t r = 0.1µs ax., ITM = (2x Rated di/dt) A)
NTE5567, NTE5568 200A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5569, NTE5571 100A/ µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Delay Time, td0.9µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TC = +25°C, VDM = Rated VDRM, DC Resistive Circuit, Gate Pulse = 10V, 15Ω Source, tp = 20µs)
Typical Turn–Off Time, tq110µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TC = +125°C, ITM = 50A, Reapplied dv/dt = 20Vµs, dir/dt = –10A/µs, V R = 50V)
Maximum Critical Rate of Rise of Off–State Voltage, dv/dt
(Linear to 100% rated VDRM) 200V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Linear to 67% rated VDRM) 500V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Gate Power (tp ≤ 5ms), PG(AV) 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Gate Power, PGM 2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Positive Gate Current, IGM 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Positive Gate Voltage, +VGM 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Negative Gate Voltage, –VGM 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Gate Current Required to Trigger (6V Anode–to–Cathode Applied), IGT 50mA. . . . . . . . . . . . . .
DC Gate Voltage Required to Trigger (6V Anode–to–Cathode Applied, TJ = +25°C), VGT 2.5V. . .
DC Gate Current Not to Trigger (Rated VDRM Anode–to–Cathode Applied), IGD 5.0mA. . . . . . . . . .
DC Gate Voltage Not to Trigger (Rated VDRM Anode–to–Cathode Applied), VGD 0.2V. . . . . . . . . .
Operating Junction Temperature Range, TJ–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance
Junction–to–Case (DC Operation), RthJC 0.35K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case–to–Heatsink (Mounting Surface Smooth, Flat, and Greased), RthCS 0.25K/W. . . . . . .
Mounting Torque (Non–Lubricated Threads), T 25 – 30 (2.8 – 3.4) lbf–in (Nm). . . . . . . . . . . . . . . . . .
Note 1. Units may be broken over non–repetitively in the off–state direction without damage, if di/dt
does not exceed 20A/µs.
Note 2. For voltage pulses with tp ≤ 5ms.