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08/02/11
IRLR8256PbF
IRLU8256PbF
HEXFET® Power MOSFET
Notes through are on page 11
Applications
PD - 96208A
D-Pak
IRLR8256PbF
I-Pak
IRLU8256PbF
G
S
D
G
D
S
GDS
Gate Drain Source
lHigh Frequency Synchronous Buck
Converters for Computer Processor Power
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Benefits
lVery Low RDS(on) at 4.5V VGS
lUltra-Low Gate Impedance
lFully Characterized Avalanche Voltage
and Current
lLead-Free
lRoHS compliant
V
DSS
R
DS(on)
max
Qg
25V
5.7m
:
10nC
Parameter Units
V
DS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
ID @ TC = 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
g
P
D
@T
C
= 100°C
Maximum Power Dissipation
g
Linear Derating Factor W/°C
T
J Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
h
––– 2.4
R
θJA
Junction-to-Ambient (PCB Mount)
g
––– 50
R
θJA Junction-to-Ambient ––– 110
V
°C
°C/W
W
A
0.42
31
300 (1.6mm from case)
-55 to + 175
63
Max.
81
f
57
f
325
± 20
25
IRLR/U8256PbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C
––– 4.2 5.7
––– 6.7 8.5
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
Δ
V
GS(th)
/
Δ
T
J
Gate Threshold Voltage Coefficient ––– -7.2 ––– mV/°C
––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 81 ––– ––– S
Q
g
Total Gate Charge ––– 10 15
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC
Q
gd
Gate-to-Drain Charge ––– 3.6 –––
Q
godr
Gate Charge Overdrive ––– 2.6 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)––– 5.1 –––
Q
oss
Output Charge ––– 9.0 ––– nC
R
G
Gate Resistance ––– 2.5 3.9 Ω
t
d(on)
Turn-On Delay Time ––– 9.7 –––
t
r
Rise Time ––– 46 –––
t
d(off)
Turn-Off Delay Time ––– 12 –––
t
f
Fall Time ––– 8.5 –––
C
iss
Input Capacitance ––– 1470 –––
C
oss
Output Capacitance ––– 453 –––
C
rss
Reverse Transfer Capacitance ––– 185 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 19 29 ns
Q
rr
Reverse Recovery Charge ––– 17 26 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 13V
T
J
= 25°C, I
F
= 20A, V
DD
= 13V
di/dt = 250A/μs
e
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
e
V
DS
= V
GS
, I
D
= 25μA
R
G
= 1.8
Ω
V
DS
= 13V
I
D
= 20A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
e
V
GS
= 4.5V, I
D
= 20A
e
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 20A
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
Conditions
6.3
See Fig. 14
Max.
86
20
ƒ = 1.0MHz
mΩ
81
f
325
μA
nA
ns
pF
A
––– –––
––– –––
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
IRLR/U8256PbF
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Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1 2 3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 25A
VGS = 10V
IRLR/U8256PbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
012345678910111213
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 20V
VDS= 13V
ID= 20A
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
IRLR/U8256PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
ID, Drain Current (A)
Limited By Package
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
VGS(th), Gate threshold Voltage (V)
ID = 25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.04252 0.000007
0.57953 0.000109
1.17480 0.001003
0.60472 0.005976
IRLR/U8256PbF
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13. Gate Charge Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.57A
8.50A
BOTTOM 20A
IRLR/U8256PbF
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Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
IRLR/U8256PbF
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
INTERNATIONAL
AS SEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
OR
Note: "P" in assembly line position
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WIT H AS S E MB L Y
i ndicates "L ead-F r ee"
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = AS S E MB L Y S I T E CODE
PART NUMBER
WEEK 16
DAT E CODE
YEAR 1 = 2001
RECTIFIER
INTE RNATIONAL
LOGO
LOT CODE
AS S E MB L Y
3412
IRFR120
116A
LINE A
34
RECTIFIER
LOGO
IRFR120
12
AS S E MB L Y
LOT CODE
YEAR 1 = 2001
DAT E CODE
PART NUMBER
WE E K 16
"P" in as s embly line position indicates
"L ead-F r ee" qualificati on to the cons umer-l evel
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO T HE
CONSUMER LEVEL (OPTIONAL)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
78
LINE A
LOGO
INT ERNATIONAL
RECTIFIER
OR
PRODUCT (OPTIONAL)
P = DE S I GNAT E S L E AD-F R E E
A = ASSEMBLY SITE CODE
IRFU120
PART NUMBER
WE E K 19
DAT E CODE
YEAR 1 = 2001
RECTIF IER
INTERNATIONAL
LOGO
ASSEMBLY
LOT CODE
IRFU120
56
DAT E CODE
PART NUMBER
LOT CODE
ASSEMBLY
56 78
YEAR 1 = 2001
WEEK 19
119A
indi cates L ead- F r ee"
AS S E MBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "A"
Note: "P" in ass embly line pos ition
EXAMPLE:
WIT H AS S E MB L Y
THIS IS AN IRFU120
LOT CODE 5678
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
10 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
www.irf.com 11
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
Visit us at www.irf.com for sales contact information.08/2011
Note
Form Quantity
IRLR8256PBF D-PAK Tube/Bulk 75
IRLR8256TRPBF D-PAK Tape and Reel 2000
IRLR8256PBF
I-PAK
Tube/Bulk
75
Orderable part number Package Type Standard Pack
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
MSL1
(per JEDEC J-STD-020D†††)
I-PAK Not applicable
RoHS Compliant Yes
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level
D-PAK
Qualification Information†
Qualification level Industrial ††
(per JEDEC JESD47F††† guidelines)