VSK.41, .56..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A FEATURES * High voltage * Industrial standard package RoHS COMPLIANT * Thick copper baseplate * UL E78996 approved * 3500 VRMS isolating voltage * Totally lead (Pb)-free * Designed and qualified for industrial level ADD-A-PAKTM BENEFITS PRODUCT SUMMARY * Up to 1600 V IT(AV) or IF(AV) 45/60 A * Fully compatible TO-240AA * High surge capability MECHANICAL DESCRIPTION * Easy mounting on heatsink The Generation 5 of ADD-A-PAKTM modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. * Al203 DBC insulator * Heatsink grounded ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.41 VSK.56 IT(AV) or IF(AV) 85 C 45 60 IO(RMS) As AC switch 100 135 ITSM, IFSM 50 Hz 850 1310 60 Hz 890 1370 50 Hz 3.61 8.50 60 Hz 3.30 7.82 36.1 85.0 I2 t A I2t VRRM TStg UNITS Range kA2s kA2s 400 to 1600 V - 40 to 125 C TJ Document Number: 94419 Revision: 23-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSK.41, .56..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 VSK.41/.56 IRRM, IDRM AT 125 C mA 15 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) IT(AV) Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch TEST CONDITIONS 180 conduction, half sine wave, TC = 85 C IO(RMS) I(RMS) t = 10 ms No voltage reapplied t = 8.3 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms t = 10 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms Maximum for fusing Maximum value or threshold voltage I2t (1) VT(TO) (2) Initial TJ = TJ maximum TJ = 25 C, no voltage reapplied t = 8.3 ms I2t Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied t = 8.3 ms I2t I(RMS) TJ = 25 C no voltage reapplied t = 8.3 ms Maximum I2t for fusing or t = 0.1 to 10 ms, no voltage reapplied Low level (3) High level (4) Low level (3) TJ = TJ maximum VSK.41 VSK.56 45 60 100 135 850 1310 890 1370 715 1100 750 1150 940 1450 985 1520 3.61 8.56 3.30 7.82 2.56 6.05 2.33 5.53 4.42 10.05 4.03 9.60 36.1 85.6 0.88 0.85 0.91 0.88 5.90 3.53 5.74 3.41 1.81 1.54 Maximum value of on-state slope resistance rt (2) Maximum peak on-state or forward voltage VTM ITM = x IT(AV) VFM IFM = x IF(AV) dI/dt TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s 150 Maximum non-repetitive rate of rise of turned on current High level (4) TJ = TJ maximum TJ = 25 C Maximum holding current IH TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 C, anode supply = 6 V, resistive load 400 Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) www.vishay.com 2 (3) (4) UNITS A kA2s kA2s V m V A/s mA 16.7 % x x IAV < I < x IAV I > x IAV For technical questions, contact: ind-modules@vishay.com Document Number: 94419 Revision: 23-Apr-08 VSK.41, .56..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 45/60 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power VSK.41 VSK.56 PGM 10 PG(AV) 2.5 IGM 2.5 - VGM 10 Maximum peak gate current Maximum peak negative gate voltage TEST CONDITIONS Maximum gate voltage required to trigger VGT Anode supply = 6 V resistive load TJ = 25 C V 1.7 270 TJ = - 40 C IGT A 2.5 TJ = 125 C Maximum gate current required to trigger W 4.0 TJ = - 40 C UNITS Anode supply = 6 V resistive load TJ = 25 C mA 150 TJ = 125 C 80 Maximum gate voltage that will not trigger VGD TJ = 125 C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 C, rated VDRM applied 6 mA VSK.41 VSK.56 UNITS 15 mA 2500 (1 min) 3500 (1 s) V 500 V/s VSK.41 VSK.56 UNITS - 40 to 125 C BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 C, gate open circuit RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = 125 C, linear to 0.67 VDRM Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum internal thermal resistance, junction to case per module RthJC DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface flat, smooth and greased 0.23 busbar 5 Nm 3 Approximate weight Case style K/W 0.1 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque 10 % 0.20 JEDEC 110 g 4 oz. TO-240AA R CONDUCTION PER JUNCTION DEVICES SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180 120 90 60 30 180 120 90 60 30 VSK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 VSK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 UNITS C/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94419 Revision: 23-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSK.41, .56..PbF Series 130 VSK.41.. Series R thJC (DC) = 0.46 K/ W 120 110 Cond uction Angle 100 30 60 90 120 90 180 80 0 10 20 30 40 50 Maximum Average On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A 100 DC 180 120 90 60 30 80 60 RMS Limit 40 Conduction Period VSK.41.. Series Per Junction TJ = 125C 20 0 0 20 40 60 80 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 130 VSK.41.. Series R thJC (DC) = 0.46 K/ W 120 110 Conduction Period 30 100 60 90 120 90 180 DC 80 0 20 40 60 80 Peak Half Sine Wave On-state Current (A) Average On-state Current (A) 800 At Any Ra ted Loa d Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 700 600 500 400 VSK.41.. Series Per Junction 300 1 10 100 Average On-state Current (A) Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 70 180 120 90 60 30 60 50 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Maximum Allow able Case Tempera ture (C) Vishay High Power Products RMSLimit 40 30 Conduction Angle 20 VSK.41.. Series Per Junction TJ = 125C 10 0 0 10 20 30 40 50 900 800 700 Ma ximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 125C No Volta g e Rea pp lied Ra ted VRRM Reap p lied 600 500 400 VSK.41.. Series Per Junction 300 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94419 Revision: 23-Apr-08 VSK.41, .56..PbF Series 140 W K/ K/ W 0.3 R th SA 60 80 100 0.5 = 0 .1 W K/ W K/ 100 7 0. 180 120 90 60 30 120 1 K/ W - 1. 5K /W 80 R De lta Maximum Total On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 45/60 A 2K /W 60 Conduction Angle 3 K/ 40 W VSK.41.. Series 5 K/ W Per Mod ule TJ = 125C 20 0 0 20 40 60 100 0 80 20 40 120 140 Maximum Allowable Ambient Temperature (C) Total RMSOutp ut Current (A) Fig. 7 - On-State Power Loss Characteristics R t hS 2 0. 300 ta el -D 0. 5 K/ W W K/ 200 .1 =0 K/ W R 180 (Sine) 180 (Rec t) A 0. 3 250 W K/ Maximum Total Power Loss (W) 350 0. 7 150 100 K/ W 1K /W 2 x VSK.41.. Series Single Phase Bridge Connected TJ = 125C 50 1.5 K/ W 0 0 20 40 60 80 0 100 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 8 - On-State Power Loss Characteristics 500 SA R th = 400 /W 1K 0. 2 0. W K/ 350 300 0. 3 250 200 150 3 x VSK.41.. Series Three Phase Bridge Connected TJ = 125C 100 50 K/ W R 120 (Rect) ta el -D Maximum Total Power Loss (W) 450 0.5 K/ W 0.7 K/ W 1 K/ W 0 0 20 40 60 80 100 Total Output Current (A) 120 140 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94419 Revision: 23-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 VSK.41, .56..PbF Series 130 VSK.56.. Series RthJC (DC) = 0.40 K/ W 120 110 Conduction Angle 100 90 30 60 80 90 120 180 70 0 10 20 30 40 50 60 70 Maximum Average On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A DC 180 120 90 60 30 100 80 60 RMSLimit Conduction Period 40 VSK.56.. Series Per Junction TJ = 125C 20 0 0 20 60 80 100 Average On-state Current (A) Fig. 13 - On-State Power Loss Characteristics 130 VSK.56.. Series R thJC (DC) = 0.40 K/W 120 110 Conduction Period 100 90 90 80 30 60 120 180 DC 70 0 20 40 60 80 60 RMSLimit 50 40 30 Cond uction Angle 20 VSK.56.. Series Per Junction TJ = 125C 10 0 0 10 20 30 40 50 1000 900 800 700 600 VSK.56.. Series Per Junction 500 1 10 100 60 Fig. 14 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 180 120 90 60 30 70 At Any Ra ted Loa d Condition And With Ra ted VRRM Ap plied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 1100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) 90 80 1200 100 Fig. 11 - Current Ratings Characteristics 1400 Ma ximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Cond uc tion May Not Be Maintained. Initial TJ= 125C No Volta ge Rea pp lie d Ra ted VRRM Rea pp lie d 1200 1000 800 600 VSK.56.. Series Per Junction 400 0.01 0.1 1 Pulse Train Duration (s) Average On-state Current (A) Fig. 12 - On-State Power Loss Characteristics www.vishay.com 6 40 Average On-state Current (A) Average On-state Current (A) Maximum Average On-state Power Loss (W) 120 Fig. 10 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Maximum Allow able Case Temperature (C) Maximum Allowable Case Temperature (C) Vishay High Power Products Fig. 15 - Maximum Non-Repetitive Surge Current For technical questions, contact: ind-modules@vishay.com Document Number: 94419 Revision: 23-Apr-08 VSK.41, .56..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 45/60 A R th SA .1 =0 W K/ elt -D K/ W aR 100 W K/ 0. 7 120 W K/ 140 W W K/ K/ 5 0. 160 4 0. 180 120 90 60 30 180 2 0. 3 0. Maximum Total On-state Power Loss (W) 200 1K /W 80 1.5 K/ W 2 K/ W Conduction Angle 60 VSK.56.. Series Per Mod ule TJ = 125C 40 20 4 K/ W 0 0 20 40 60 80 100 0 140 120 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Total RMSOutput Current (A) Fig. 16 - On-State Power Loss Characteristics 400 R th SA 0. 2 0. 3K /W R 200 150 2 x VSK.56.. Series Single Phase Bridge Connec ted TJ = 125C 100 50 a 250 K/ W elt -D 300 W K/ 180 (Sine) 180 (Rec t) 1 0. 350 = Maximum Total Power Loss (W) 450 0.5 K/ W 0.7 K/ W 1K /W 2 K/ W 0 0 20 40 60 80 100 120 140 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 17 - On-State Power Loss Characteristics R th 500 SA = 200 3 x VSK.56.. Series Three Phase Bridge Connec ted TJ = 125C 100 0.3 R 300 K/ W ta el -D 120 (Rect) W K/ 0. 2 400 1 0. Maximum Total Power Loss (W) 600 K/ W 0.5 K/ W 0.7 K/ W 1 K/ W 0 0 20 40 60 0 80 100 120 140 160 180 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 18 - On-State Power Loss Characteristics Document Number: 94419 Revision: 23-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 VSK.41, .56..PbF Series Maximum Reverse Recovery Charge - Qrr (C) Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A Vishay High Power Products Instantaneous On-state Current (A) 1000 100 TJ= 25C TJ= 125C 10 VSK.41.. Series Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Maximum Reverse Recovery Current - Irr (A) Instantaneous On-state Current (A) 100 TJ = 25C TJ = 125C VSK.56.. Series Per Junction 1 1.5 2 2.5 3 3.5 4 4.5 100 A 350 50 A 300 250 20 A 200 10 A 150 100 10 20 30 40 50 60 70 80 90 100 110 I TM = 200 A 100 100 A 90 50 A 80 20 A 70 10 A 60 VSK.41.. Series VSK.56.. Series TJ = 125 C 50 40 30 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Instantaneous On-state Voltage (V) Fig. 20 - On-State Voltage Drop Characteristics Tra nsient Thermal Impedanc e Z thJC (K/W) I TM = 200 A Fig. 21 - Recovery Charge Characteristics 1000 1 0.5 VSK.41.. Series 450 VSK.56.. Series TJ = 125 C 400 Rate Of Fall Of On-state Current - di/ dt (A/ s) Fig. 19 - On-State Voltage Drop Characteristics 10 500 Fig. 22 - Recovery Current Characteristics 1 Steady State Value: R thJC = 0.46 K/ W R thJC = 0.40 K/ W (DC Operation) VSK.41.. Series VSK.56.. Series 0.1 Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 23 - Thermal Impedance ZthJC Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94419 Revision: 23-Apr-08 VSK.41, .56..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 45/60 A Rec tangular gate pulse a)Recommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) 1 TJ = -40 C TJ = 125 C TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 VSK.41../ .56.. Series Frequenc y Limited by PG(AV) 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics ORDERING INFORMATION TABLE Device code VSK T 56 1 2 3 / 16 S90 P 4 5 6 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current code (1) 4 - Voltage code (see Voltage Ratings table) 5 - dV/dt code: S90 = dV/dt 1000 V/s No letter = dV/dt 500 V/s 6 - P = Lead (Pb)-free (1) Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 41 to 42 56 to 57 e.g.: VSKT57/16P etc. Note * To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94419 Revision: 23-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 VSK.41, .56..PbF Series Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A Vishay High Power Products CIRCUIT CONFIGURATION VSKH VSKT (1) (1) ~ 2 + (2) + (2) 3 (3) G1 K1 K2 G2 (4) (5) (7) (6) - 1 + (2) 2 2 + (2) 3 3 4 5 4 5 76 (1) ~ 1 2 3 (1) ~ 1 1 VSKN VSKL 4 5 76 (3) K2 G2 (7) (6) (3) G1 K1 (4) (5) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 http://www.vishay.com/doc?95085 For technical questions, contact: ind-modules@vishay.com Document Number: 94419 Revision: 23-Apr-08 Outline Dimensions Vishay Semiconductors ADD-A-PAK SCR DIMENSIONS in millimeters (inches) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) 6 4 30 1 (1.18 0.039) 29 0.5 (1 0.0197) 13.8 (0.54) Document Number: 95085 Revision: 29-Sep-08 76 4 0.2 (0.2 0.0079) Detail Z 13.8 REF. 20 0.5 (0.79 0.0197) 45 20 0.5 (0.79 0.0197) 76 15 0.5 (0.59 0.0197) 92 0.75 (3.6 0.02953) For technical questions, contact: indmodules@vishay.com 5.8 0.25 (0.2 0.00984) 1 45 3 2 80 0.3 (3.15 0.0118) 6.2 (2 x) 0.2 (0.2 0.0079) 30 0.5 (1.18 0.0197) 21 0.75 (0.8 0.02953) 35 REF. 18 (0.7) REF. 24 0.5 (1 0.0197) 15.6 0.5 (0.6 0.0197) 6.3 0.3 (0.2 0.0118) With no auxiliary cathode Viti M5 x 0.8 Screws M5 x 0.8 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1