MKE02P64M20SF0
KE02 Sub-Family Data Sheet
Supports the following:
MKE02Z16VLC2(R),
MKE02Z32VLC2(R),
MKE02Z64VLC2(R),
MKE02Z16VLD2(R),
MKE02Z32VLD2(R),
MKE02Z64VLD2(R),
MKE02Z32VLH2(R),
MKE02Z64VLH2(R),
MKE02Z32VQH2(R), and
MKE02Z64VQH2(R)
Key features
Operating characteristics
Voltage range: 2.7 to 5.5 V
Flash write voltage range: 2.7 to 5.5 V
Temperature range (ambient): -40 to 105°C
Performance
Up to 20 MHz ARM® Cortex-M0+ core
Single cycle 32-bit x 32-bit multiplier
Single cycle I/O access port
Memories and memory interfaces
Up to 64 KB flash
Up to 256 B EEPROM
Up to 4 KB RAM
Clocks
Oscillator (OSC) - supports 32.768 kHz crystal or 4
MHz to 20 MHz crystal or ceramic resonator; choice
of low power or high gain oscillators
Internal clock source (ICS) - internal FLL with
internal or external reference, 31.25 kHz pre-
trimmed internal reference for 16 MHz system clock
(able to be trimmed for up to 20 MHz system clock)
Internal 1 kHz low-power oscillator (LPO)
System peripherals
Power management module (PMC) with three power
modes: Run, Wait, Stop
Low-voltage detection (LVD) with reset or interrupt,
selectable trip points
Watchdog with independent clock source (WDOG)
Programmable cyclic redundancy check module
(CRC)
Serial wire debug interface (SWD)
Bit manipulation engine (BME)
Security and integrity modules
64-bit unique identification (ID) number per chip
Human-machine interface
Up to 57 general-purpose input/output (GPIO)
Two up to 8-bit keyboard interrupt modules (KBI)
External interrupt (IRQ)
Analog modules
One up to 16-channel 12-bit SAR ADC, operation in
Stop mode, optional hardware trigger (ADC)
Two analog comparators containing a 6-bit DAC
and programmable reference input (ACMP)
Timers
One 6-channel FlexTimer/PWM (FTM)
Two 2-channel FlexTimer/PWM (FTM)
One 2-channel periodic interrupt timer (PIT)
One real-time clock (RTC)
NXP Semiconductors Document Number MKE02P64M20SF0
Data Sheet: Technical Data Rev. 5, 07/2016
NXP reserves the right to change the production detail specifications as may be
required to permit improvements in the design of its products.
Communication interfaces
Two SPI modules (SPI)
Up to three UART modules (UART)
One I2C module (I2C)
Package options
64-pin QFP/LQFP
44-pin LQFP
32-pin LQFP
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
2 NXP Semiconductors
Table of Contents
1 Ordering parts.......................................................................................4
1.1 Determining valid orderable parts............................................... 4
2 Part identification................................................................................. 4
2.1 Description...................................................................................4
2.2 Format..........................................................................................4
2.3 Fields............................................................................................4
2.4 Example....................................................................................... 5
3 Parameter classification........................................................................5
4 Ratings..................................................................................................6
4.1 Thermal handling ratings.............................................................6
4.2 Moisture handling ratings............................................................ 6
4.3 ESD handling ratings...................................................................6
4.4 Voltage and current operating ratings..........................................7
5 General................................................................................................. 7
5.1 Nonswitching electrical specifications........................................ 7
5.1.1 DC characteristics.......................................................... 7
5.1.2 Supply current characteristics........................................ 14
5.1.3 EMC performance..........................................................15
5.2 Switching specifications.............................................................. 16
5.2.1 Control timing................................................................16
5.2.2 FTM module timing.......................................................17
5.3 Thermal specifications.................................................................18
5.3.1 Thermal operating requirements.................................... 18
5.3.2 Thermal characteristics.................................................. 18
6 Peripheral operating requirements and behaviors................................ 20
6.1 Core modules............................................................................... 20
6.1.1 SWD electricals .............................................................20
6.2 External oscillator (OSC) and ICS characteristics.......................21
6.3 NVM specifications..................................................................... 23
6.4 Analog..........................................................................................24
6.4.1 ADC characteristics....................................................... 24
6.4.2 Analog comparator (ACMP) electricals.........................27
6.5 Communication interfaces........................................................... 27
6.5.1 SPI switching specifications.......................................... 27
7 Dimensions...........................................................................................30
7.1 Obtaining package dimensions.................................................... 30
8 Pinout................................................................................................... 31
8.1 Signal multiplexing and pin assignments.................................... 31
8.2 Device pin assignment.................................................................33
9 Revision history....................................................................................35
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 3
Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to nxp.com and perform a part number search for the
following device numbers: KE02Z.
Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format:
Q KE## A FFF R T PP CC N
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field Description Values
Q Qualification status M = Fully qualified, general market flow
P = Prequalification
KE## Kinetis family KE02
A Key attribute Z = M0+ core
FFF Program flash memory size 16 = 16 KB
32 = 32 KB
64 = 64 KB
R Silicon revision (Blank) = Main
A = Revision after main
Table continues on the next page...
1
2
Ordering parts
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
4 NXP Semiconductors
Field Description Values
T Temperature range (°C) V = –40 to 105
PP Package identifier LC = 32 LQFP (7 mm x 7 mm)
LD = 44 LQFP (10 mm x 10 mm)
QH = 64 QFP (14 mm x 14 mm)
LH = 64 LQFP (10 mm x 10 mm)
CC Maximum CPU frequency (MHz) 2 = 20 MHz
N Packaging type R = Tape and reel
(Blank) = Trays
2.4 Example
This is an example part number:
MKE02Z64VQH2
3Parameter classification
The electrical parameters shown in this supplement are guaranteed by various methods.
To give the customer a better understanding, the following classification is used and the
parameters are tagged accordingly in the tables where appropriate:
Table 1. Parameter classifications
P Those parameters are guaranteed during production testing on each individual device.
C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size
across process variations.
T Those parameters are achieved by design characterization on a small sample size from typical devices under
typical conditions unless otherwise noted. All values shown in the typical column are within this category.
D Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the
parameter tables where appropriate.
Parameter classification
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 5
Ratings
4.1 Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level 3 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model –6000 +6000 V 1
VCDM Electrostatic discharge voltage, charged-device model –500 +500 V 2
ILAT Latch-up current at ambient temperature of 125°C –100 +100 mA 3
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78D, IC Latch-up Test.
Test was performed at 125 °C case temperature (Class II).
I/O pins pass ±100 mA I-test with IDD current limit at 800 mA.
I/O pins pass +60/-100 mA I-test with IDD current limit at 1000 mA.
Supply groups pass 1.5 Vccmax.
RESET pin was only tested with negative I-test due to product conditioning requirement.
4
Ratings
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
6 NXP Semiconductors
4.4 Voltage and current operating ratings
Absolute maximum ratings are stress ratings only, and functional operation at the
maxima is not guaranteed. Stress beyond the limits specified in the following table may
affect device reliability or cause permanent damage to the device. For functional
operating conditions, refer to the remaining tables in this document.
This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages to this high-impedance
circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate
logic voltage level (for instance, either VSS or VDD) or the programmable pullup resistor
associated with the pin is enabled.
Table 2. Voltage and current operating ratings
Symbol Description Min. Max. Unit
VDD Digital supply voltage –0.3 6.0 V
IDD Maximum current into VDD 120 mA
VIN Input voltage except true open drain pins –0.3 VDD + 0.31V
Input voltage of true open drain pins –0.3 6 V
IDInstantaneous maximum current single pin limit (applies to all
port pins)
–25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
1. Maximum rating of VDD also applies to VIN.
General
Nonswitching electrical specifications
5.1.1 DC characteristics
This section includes information about power supply requirements and I/O pin
characteristics.
Table 3. DC characteristics
Symbol C Descriptions Min Typical1Max Unit
Operating voltage 2.7 5.5 V
Table continues on the next page...
5
5.1
General
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 7
Table 3. DC characteristics (continued)
Symbol C Descriptions Min Typical1Max Unit
VOH P Output
high
voltage
All I/O pins, except PTA2
and PTA3, standard-
drive strength
5 V, Iload = –5 mA VDD – 0.8 V
C 3 V, Iload = –2.5 mA VDD – 0.8 V
P High current drive pins,
high-drive strength25 V, Iload = –20 mA VDD – 0.8 V
C 3 V, Iload = –10 mA VDD – 0.8 V
IOHT D Output
high
current
Max total IOH for all ports 5 V –100 mA
3 V –60
VOL P Output
low
voltage
All I/O pins, standard-
drive strength
5 V, Iload = 5 mA 0.8 V
C 3 V, Iload = 2.5 mA 0.8 V
P High current drive pins,
high-drive strength25 V, Iload =20 mA 0.8 V
C 3 V, Iload = 10 mA 0.8 V
IOLT D Output
low
current
Max total IOL for all ports 5 V 100 mA
3 V 60
VIH P Input
high
voltage
All digital inputs 4.5≤VDD<5.5 V 0.65 × VDD V
2.7≤VDD<4.5 V 0.70 × VDD
VIL P Input low
voltage
All digital inputs 4.5≤VDD<5.5 V 0.35 ×
VDD
V
2.7≤VDD<4.5 V 0.30 ×
VDD
Vhys C Input
hysteresi
s
All digital inputs 0.06 × VDD mV
|IIn| P Input
leakage
current
Per pin (pins in high
impedance input mode)
VIN = VDD or VSS 0.1 1 µA
|IINTOT| C Total
leakage
combine
d for all
port pins
Pins in high impedance
input mode
VIN = VDD or VSS 2 µA
RPU P Pullup
resistors
All digital inputs, when
enabled (all I/O pins
other than PTA2 and
PTA3)
30.0 50.0 kΩ
RPU3P Pullup
resistors
PTA2 and PTA3 pins 30.0 60.0 kΩ
IIC D DC
injection
current4,
5, 6
Single pin limit VIN < VSS, VIN >
VDD
-2 2 mA
Total MCU limit, includes
sum of all stressed pins
-5 25
CIn C Input capacitance, all pins 7 pF
VRAM C RAM retention voltage 2.0 V
1. Typical values are measured at 25 °C. Characterized, not tested.
2. Only PTB4, PTB5, PTD0, PTD1, PTE0, PTE1, PTH0, and PTH1 support high current output.
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
8 NXP Semiconductors
3. The specified resistor value is the actual value internal to the device. The pullup value may appear higher when measured
externally on the pin.
4. All functional non-supply pins, except for PTA2 and PTA3, are internally clamped to VSS and VDD. PTA2 and PTA3 are true
open drain I/O pins that are internally clamped to VSS.
5. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor,
calculate resistance values for positive and negative clamp voltages, then use the larger value.
6. Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is higher than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current higher than
maximum injection current when the MCU is not consuming power, such as when no system clock is present, or clock rate
is very low (which would reduce overall power consumption).
Table 4. LVD and POR specification
Symbol C Description Min Typ Max Unit
VPOR D POR re-arm voltage11.5 1.75 2.0 V
VLVDH C Falling low-voltage detect
threshold—high range (LVDV
= 1)2
4.2 4.3 4.4 V
VLVW1H C Falling low-
voltage
warning
threshold—
high range
Level 1 falling
(LVWV = 00)
4.3 4.4 4.5 V
VLVW2H C Level 2 falling
(LVWV = 01)
4.5 4.5 4.6 V
VLVW3H C Level 3 falling
(LVWV = 10)
4.6 4.6 4.7 V
VLVW4H C Level 4 falling
(LVWV = 11)
4.7 4.7 4.8 V
VHYSH C High range low-voltage
detect/warning hysteresis
100 mV
VLVDL C Falling low-voltage detect
threshold—low range (LVDV
= 0)
2.56 2.61 2.66 V
VLVW1L C Falling low-
voltage
warning
threshold—
low range
Level 1 falling
(LVWV = 00)
2.62 2.7 2.78 V
VLVW2L C Level 2 falling
(LVWV = 01)
2.72 2.8 2.88 V
VLVW3L C Level 3 falling
(LVWV = 10)
2.82 2.9 2.98 V
VLVW4L C Level 4 falling
(LVWV = 11)
2.92 3.0 3.08 V
VHYSDL C Low range low-voltage detect
hysteresis
40 mV
VHYSWL C Low range low-voltage
warning hysteresis
80 mV
VBG P Buffered bandgap output 31.14 1.16 1.18 V
1. Maximum is highest voltage that POR is guaranteed.
2. Rising thresholds are falling threshold + hysteresis.
3. voltage Factory trimmed at VDD = 5.0 V, Temp = 25 °C
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 9
IOH(mA)
VDD-VOH(V)
Figure 1. Typical VDD-VOH Vs. IOH (standard drive strength) (VDD = 5 V)
IOH(mA)
VDD-VOH(V)
Figure 2. Typical VDD-VOH Vs. IOH (standard drive strength) (VDD = 3 V)
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
10 NXP Semiconductors
IOH(mA)
VDD-VOH(V)
Figure 3. Typical VDD-VOH Vs. IOH (high drive strength) (VDD = 5 V)
IOH(mA)
VDD-VOH(V)
Figure 4. Typical VDD-VOH Vs. IOH (high drive strength) (VDD = 3 V)
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 11
IOL(mA)
VOL(V)
Figure 5. Typical VOL Vs. IOL (standard drive strength) (VDD = 5 V)
IOL(mA)
VOL(V)
Figure 6. Typical VOL Vs. IOL (standard drive strength) (VDD = 3 V)
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
12 NXP Semiconductors
IOL(mA)
VOL(V)
Figure 7. Typical VOL Vs. IOL (high drive strength) (VDD = 5 V)
IOL(mA)
VOL(V)
Figure 8. Typical VOL Vs. IOL (high drive strength) (VDD = 3 V)
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 13
5.1.2 Supply current characteristics
This section includes information about power supply current in various operating modes.
Table 5. Supply current characteristics
C Parameter Symbol Core/Bus
Freq
VDD (V) Typical1Max2Unit Temp
C Run supply current FEI
mode, all modules clocks
enabled; run from flash
RIDD 20/20 MHz 5 6.7 mA –40 to 105 °C
C 10/10 MHz 4.5
1/1 MHz 1.5
C 20/20 MHz 3 6.6
C 10/10 MHz 4.4
1/1 MHz 1.45
C Run supply current FEI
mode, all modules clocks
disabled; run from flash
RIDD 20/20 MHz 5 5.3 mA –40 to 105 °C
C 10/10 MHz 3.7
1/1 MHz 1.5
C 20/20 MHz 3 5.3
C 10/10 MHz 3.7
1/1 MHz 1.4
P Run supply current FBE
mode, all modules clocks
enabled; run from RAM
RIDD 20/20 MHz 5 9 14.8 mA –40 to 105 °C
C 10/10 MHz 5.2
1/1 MHz 1.45
P 20/20 MHz 3 8.8 11.8
C 10/10 MHz 5.1
1/1 MHz 1.4
P Run supply current FBE
mode, all modules clocks
disabled; run from RAM
RIDD 20/20 MHz 5 8 12.3 mA –40 to 105 °C
C 10/10 MHz 4.4
1/1 MHz 1.35
P 20/20 MHz 3 7.8 9.2
C 10/10 MHz 4.2
1/1 MHz 1.3
P Wait mode current FEI
mode, all modules clocks
enabled
WIDD 20/20 MHz 5 5.5 mA –40 to 105 °C
C 20/10 MHz 3.5
1/1 MHz 1.4
C 20/20 MHz 3 5.4
10/10 MHz 3.4
1/1 MHz 1.4
P Stop mode supply current
no clocks active (except 1
kHz LPO clock)3
SIDD 5 2 85 µA –40 to 105 °C
P 3 1.9 80 –40 to 105 °C
Table continues on the next page...
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
14 NXP Semiconductors
Table 5. Supply current characteristics (continued)
C Parameter Symbol Core/Bus
Freq
VDD (V) Typical1Max2Unit Temp
C ADC adder to Stop
ADLPC = 1
ADLSMP = 1
ADCO = 1
MODE = 10B
ADICLK = 11B
5 86 (64-, 44-
pin
packages)
42 (32-pin
package)
µA –40 to 105 °C
C 3 82 (64-, 44-
pin
packages)
41 (32-pin
package)
C ACMP adder to Stop 5 12 µA –40 to 105 °C
C 3 12
C LVD adder to stop4 5 128 µA –40 to 105 °C
C 3 124
1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.
2. The Max current is observed at high temperature of 105 °C.
3. RTC adder causes IDD to increase typically by less than 1 µA; RTC clock source is 1 kHz LPO clock.
4. LVD is periodically woken up from Stop by 5% duty cycle. The period is equal to or less than 2 ms.
5.1.3 EMC performance
Electromagnetic compatibility (EMC) performance is highly dependent on the
environment in which the MCU resides. Board design and layout, circuit topology
choices, location and characteristics of external components as well as MCU software
operation play a significant role in EMC performance. The system designer must consult
the following applications notes, available on nxp.com for advice and guidance
specifically targeted at optimizing EMC performance.
AN2321: Designing for Board Level Electromagnetic Compatibility
AN1050: Designing for Electromagnetic Compatibility (EMC) with HCMOS
Microcontrollers
AN1263: Designing for Electromagnetic Compatibility with Single-Chip
Microcontrollers
AN2764: Improving the Transient Immunity Performance of Microcontroller-Based
Applications
AN1259: System Design and Layout Techniques for Noise Reduction in MCU-
Based Systems
Nonswitching electrical specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 15
5.1.3.1 EMC radiated emissions operating behaviors
Table 6. EMC radiated emissions operating behaviors for 64-pin QFP package
Symbol Description Frequency
band (MHz)
Typ. Unit Notes
VRE1 Radiated emissions voltage, band 1 0.15–50 14 dBμV 1, 2
VRE2 Radiated emissions voltage, band 2 50–150 15 dBμV
VRE3 Radiated emissions voltage, band 3 150–500 3 dBμV
VRE4 Radiated emissions voltage, band 4 500–1000 4 dBμV
VRE_IEC IEC level 0.15–1000 M 2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
2. VDD = 5.0 V, TA = 25 °C, fOSC = 10 MHz (crystal), fBUS = 20 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
Switching specifications
5.2.1 Control timing
Table 7. Control timing
Num C Rating Symbol Min Typical1Max Unit
1 D System and core clock fSys DC 20 MHz
2 P Bus frequency (tcyc = 1/fBus) fBus DC 20 MHz
3 P Internal low power oscillator frequency fLPO 0.67 1.0 1.25 KHz
4 D External reset pulse width2textrst 1.5 ×
tcyc
ns
5 D Reset low drive trstdrv 34 × tcyc ns
6 D IRQ pulse width Asynchronous
path2tILIH 100 ns
D Synchronous path3tIHIL 1.5 × tcyc ns
7 D Keyboard interrupt pulse
width
Asynchronous
path2tILIH 100 ns
D Synchronous path tIHIL 1.5 × tcyc ns
8 C Port rise and fall time -
Normal drive strength
(load = 50 pF)4
tRise 10.2 ns
C tFall 9.5 ns
C Port rise and fall time -
high drive strength (load =
50 pF)4
tRise 5.4 ns
C tFall 4.6 ns
5.2
Switching specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
16 NXP Semiconductors
1. Typical values are based on characterization data at VDD = 5.0 V, 25 °C unless otherwise stated.
2. This is the shortest pulse that is guaranteed to be recognized as a RESET pin request.
3. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized.
4. Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range -40 °C to 105 °C.
Figure 9. Reset timing
tIHIL
KBIPx
tILIH
IRQ/KBIPx
Figure 10. KBIPx timing
5.2.2 FTM module timing
Synchronizer circuits determine the shortest input pulses that can be recognized or the
fastest clock that can be used as the optional external source to the timer counter. These
synchronizers operate from the current bus rate clock.
Table 8. FTM input timing
C Function Symbol Min Max Unit
D External clock
frequency
fTCLK 0 fBus/4 Hz
D External clock
period
tTCLK 4 tcyc
D External clock high
time
tclkh 1.5 tcyc
D External clock low
time
tclkl 1.5 tcyc
D Input capture pulse
width
tICPW 1.5 tcyc
tTCLK
tclkh
tclkl
TCLK
Figure 11. Timer external clock
Switching specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 17
tICPW
FTMCHn
tICPW
FTMCHn
Figure 12. Timer input capture pulse
Thermal specifications
5.3.1 Thermal operating requirements
Table 9. Thermal operating requirements
Symbol Description Min. Max. Unit Notes
TJDie junction temperature –40 125 °C
TAAmbient temperature –40 105 °C 1
1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed maximum TJ. The simplest method to
determine TJ is: TJ = TA + θJA x chip power dissipation
5.3.2 Thermal characteristics
This section provides information about operating temperature range, power dissipation,
and package thermal resistance. Power dissipation on I/O pins is usually small compared
to the power dissipation in on-chip logic and voltage regulator circuits, and it is user-
determined rather than being controlled by the MCU design. To take PI/O into account in
power calculations, determine the difference between actual pin voltage and VSS or VDD
and multiply by the pin current for each I/O pin. Except in cases of unusually high pin
current (heavy loads), the difference between pin voltage and VSS or VDD will be very
small.
Table 10. Thermal attributes
Board type Symbol Description 64
LQFP
64 QFP 44
LQFP
32
LQFP
Unit Notes
Single-layer (1S) RθJA Thermal resistance, junction
to ambient (natural
convection)
71 61 75 86 °C/W 1, 2
Four-layer (2s2p) RθJA Thermal resistance, junction
to ambient (natural
convection)
53 47 53 57 °C/W 1, 3
Table continues on the next page...
5.3
Thermal specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
18 NXP Semiconductors
Table 10. Thermal attributes (continued)
Board type Symbol Description 64
LQFP
64 QFP 44
LQFP
32
LQFP
Unit Notes
Single-layer (1S) RθJMA Thermal resistance, junction
to ambient (200 ft./min. air
speed)
59 50 62 72 °C/W 1, 3
Four-layer (2s2p) RθJMA Thermal resistance, junction
to ambient (200 ft./min. air
speed)
46 41 47 51 °C/W 1, 3
RθJB Thermal resistance, junction
to board
35 32 34 33 °C/W 4
RθJC Thermal resistance, junction
to case
20 23 20 24 °C/W 5
ΨJT Thermal characterization
parameter, junction to
package top outside center
(natural convection)
5 8 5 6 °C/W 6
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2. Per JEDEC JESD51-2 with the single layer board (JESD51-3) horizontal.
3. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured
on the top surface of the board near the package.
5. Thermal resistance between the die and the solder pad on the bottom of the package. Interface resistance is ignored.
6. Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization.
The average chip-junction temperature (TJ) in °C can be obtained from:
TJ = TA + (PD × θJA)
Where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts - chip internal power
PI/O = Power dissipation on input and output pins - user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship
between PD and TJ (if PI/O is neglected) is:
PD = K ÷ (TJ + 273 °C)
Solving the equations above for K gives:
K = PD × (TA + 273 °C) + θJA × (PD)2
Thermal specifications
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 19
where K is a constant pertaining to the particular part. K can be determined by measuring
PD (at equilibrium) for an known TA. Using this value of K, the values of PD and TJ can
be obtained by solving the above equations iteratively for any value of TA.
6 Peripheral operating requirements and behaviors
6.1 Core modules
6.1.1 SWD electricals
Table 11. SWD full voltage range electricals
Symbol Description Min. Max. Unit
Operating voltage 2.7 5.5 V
J1 SWD_CLK frequency of operation
Serial wire debug
0
20
MHz
J2 SWD_CLK cycle period 1/J1 ns
J3 SWD_CLK clock pulse width
Serial wire debug
20
ns
J4 SWD_CLK rise and fall times 3 ns
J9 SWD_DIO input data setup time to SWD_CLK rise 10 ns
J10 SWD_DIO input data hold time after SWD_CLK rise 3 ns
J11 SWD_CLK high to SWD_DIO data valid 35 ns
J12 SWD_CLK high to SWD_DIO high-Z 5 ns
J2
J3 J3
J4 J4
SWD_CLK (input)
Figure 13. Serial wire clock input timing
Peripheral operating requirements and behaviors
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
20 NXP Semiconductors
J11
J12
J11
J9 J10
Input data valid
Output data valid
Output data valid
SWD_CLK
SWD_DIO
SWD_DIO
SWD_DIO
SWD_DIO
Figure 14. Serial wire data timing
6.2 External oscillator (OSC) and ICS characteristics
Table 12. OSC and ICS specifications (temperature range = -40 to 105 °C ambient)
Num C Characteristic Symbol Min Typical1Max Unit
1 C Crystal or
resonator
frequency
Low range (RANGE = 0) flo 31.25 32.768 39.0625 kHz
C High range (RANGE = 1) fhi 4 20 MHz
2 D Load capacitors C1, C2 See Note2
3 D Feedback
resistor
Low Frequency, Low-Power
Mode3RF MΩ
Low Frequency, High-Gain
Mode
10 MΩ
High Frequency, Low-
Power Mode
1 MΩ
High Frequency, High-Gain
Mode
1 MΩ
4 D Series resistor -
Low Frequency
Low-Power Mode 3RS 0 kΩ
High-Gain Mode 200 kΩ
5 D Series resistor -
High Frequency
Low-Power Mode3RS 0 kΩ
Table continues on the next page...
Peripheral operating requirements and behaviors
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
NXP Semiconductors 21
Table 12. OSC and ICS specifications (temperature range = -40 to 105 °C ambient)
(continued)
Num C Characteristic Symbol Min Typical1Max Unit
D Series resistor -
High
Frequency,
High-Gain Mode
4 MHz 0 kΩ
D 8 MHz 0 kΩ
D 16 MHz 0 kΩ
6 C Crystal start-up
time low range
= 32.768 kHz
crystal; High
range = 20 MHz
crystal4,5
Low range, low power tCSTL 1000 ms
C Low range, high gain 800 ms
C High range, low power tCSTH 3 ms
C High range, high gain 1.5 ms
7 T Internal reference start-up time tIRST 20 50 µs
8 P Internal reference clock (IRC) frequency trim
range
fint_t 31.25 39.0625 kHz
9 P Internal
reference clock
frequency,
factory trimmed,
T = 25 °C, VDD = 5 V fint_ft 31.25 kHz
10 P DCO output
frequency range
FLL reference = fint_t, flo,
or fhi/RDIV
fdco 16 20 MHz
11 P Factory trimmed
internal
oscillator
accuracy
T = 25 °C, VDD = 5 V Δfint_ft -0.5 0.5 %
12 C Deviation of IRC
over
temperature
when trimmed
at T = 25 °C,
VDD = 5 V
Over temperature range
from -40 °C to 105°C
Δfint_t -1 0.5 %
Over temperature range
from 0 °C to 105°C
Δfint_t -0.5 0.5
13 C Frequency
accuracy of
DCO output
using factory
trim value
Over temperature range
from -40 °C to 105°C
Δfdco_ft -1.5 1 %
Over temperature range
from 0 °C to 105°C
Δfdco_ft -1 1
14 C FLL acquisition time4,6tAcquire 2 ms
15 C Long term jitter of DCO output clock
(averaged over 2 ms interval)7CJitter 0.02 0.2 %fdco
1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.
2. See crystal or resonator manufacturer's recommendation.
3. Load capacitors (C1,C2), feedback resistor (RF) and series resistor (RS) are incorporated internally when RANGE = HGO =
0.
4. This parameter is characterized and not tested on each device.
5. Proper PC board layout procedures must be followed to achieve specifications.
6. This specification applies to any time the FLL reference source or reference divider is changed, trim value changed, or
changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as
the reference, this specification assumes it is already running.
7. Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBus.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise
injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage
for a given interval.
Peripheral operating requirements and behaviors
KE02 Sub-Family Data Sheet, Rev. 5, 07/2016
22 NXP Semiconductors
OSC
EXTAL
Crystal or Resonator
R
S
C2
RF
C1
XTAL
Figure 15. Typical crystal or resonator circuit
6.3 NVM specifications
This section provides details about program/erase times and program/erase endurance for
the flash and EEPROM memories.
Table 13. Flash and EEPROM characteristics
C Characteristic Symbol Min1Typical2Max3Unit4
D Supply voltage for program/erase –40
°C to 105 °C
Vprog/erase 2.7 5.5 V
D Supply voltage for read operation VRead 2.7 5.5 V
D NVM Bus frequency fNVMBUS 1 25 MHz
D NVM Operating frequency fNVMOP 0.8 1 1.05 MHz
D Erase Verify All Blocks tVFYALL 17338 tcyc
D Erase Verify Flash Block tRD1BLK 16913 tcyc
D Erase Verify EEPROM Block tRD1BLK 810 tcyc
D Erase Verify Flash Section tRD1SEC<