Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461US thru 1N6468US
1N6461US
DESCRIPTION APPEARANCE
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional T ransient Voltage Suppressor (TVS) designs is militar y qualified to MIL-
PRF-19500/551 and are ideal for high-reliabi lity applications where a failure cannot be
tolerated. They provid e a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 500 W ratings. T hey are very robust in hard-glass construction and a lso use
an internal metallurgical bond identified as Category I for high reliability applications.
The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also
available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix
(see separate data sheet for 1N6461 thru 1N6468). Microsemi also offers numerous
other TVS products to meet higher a nd lower peak pulse po wer and voltage ratings in
both through-hole and surfac e-mount packages.
Package “E”
(or “ D-5B”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFI TS
• High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
• Triple-layer passivation
• Internal “Category I” metallurgical bonds
• Voidless hermetically s ealed glass package
• JAN/TX/TXV military qualifications available per MIL-
PRF-19500/551 by adding JAN, JANTX, or JANTXV
prefix
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefi x, e.g.
SP6462, SP6468, etc.
• Axial-leaded e quivalents are also available in a
square-end-cap MELF conf iguration (see separate
data sheet for 1N6461 thru 1N6168)
• Military and other high reliability transient protection
• Extremely robust construction
• Working Peak “Standoff” Voltage (VWM) from 5.0 to
51.6 V
• Available as 500 W Peak Puls e Power (PPP)
• ESD and EFT protection per IEC61 000-4-2 and
IEC61000-4-4 respectively
• Secondary lightning protection per select levels in
IEC61000-4-5
• Square-end-cap terminals for easy placement
• Nonsensitive to ESD per MIL-STD-750 Method
1020
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Operating & Storage Temperature: -55oC to +175oC
• Peak Pulse Power at 25oC: 500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
• Impulse repetition rate (duty factor): 0.01%
• Forward Surge Current: 80 Amps@ 8.33 ms one-half
sine wave
• Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100
Amps (pulsed)
• Steady-State Power: 2.5 Watts @ TA = 25oC (see
note below and Figure 4)
• Thermal Resistance Junction to End Cap: 20 oC/W
• Solder Temperatures: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note; Previous inventory
had solid silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING: None
• POLARITY: Cathode band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 539 mg
• See package dimensions on l ast page
–
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
1N6468US
mounting point to ambient is sufficiently cont rolled where TJ(MAX) is not exceeded.
Microsemi
Scottsdale Division Page 1
Copyright © 2007
10-03-2007 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461US thru 1N6468US
1N6461US
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts mAdc Vdc μAdc V(pk) A(pk) A(pk) %/oC
1N6461US 5.6 25 5 3000 9.0 315 56 -.03, +0.04
1N6462US 6.5 20 6 2500 11.0 258 46 0.06
1N6463US 13.6 5 12 500 22.6 125 22 0.085
1N6464US 16.4 5 15 500 26.5 107 19 0.085
1N6465US 27.0 2 24 50 41.4 69 12 .096
1N6466US 33.0 1 30.5 3 47.5 63 11 .098
1N6467US 43.7 1 40.3 2 63.5 45 8 .101
1N6468US 54.0 1 51.6 2 78.5 35 6 .103
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specifie d current.
VWM Working Peak Voltage: The maximum peak voltage that can be applied over the operatin g temperature range.
This is also referred to as Standoff Voltage.
ID Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC Maximum clamping voltage at specified IPP (Peak Pulse Curr ent) at the specified pulse conditions.
PPP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
–
1N6468US
FIGURE 1 FIGURE 2
PEAK PULSE POWER vs. PULSE TIME 10/1000 µs CURRENT IMPULSE WAVEFORM
Microsemi
Scottsdale Division Page 2
Copyright © 2007
10-03-2007 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461US thru 1N6468US
1N6461US
Peak Pulse Power (Ppp), Current (Ipp),
And DC Power in Percent of 25oC Ratin
g
FIGURE 3 T – Temperature – oC
8/20 µs CURRENT IMPULSE WAVEFORM
(per MIL-PRF-19500/551 FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
E-MELF-PKG (D-5B)
–
1N6468US
Note: If mounting requires adhesive separate from the solder,
an additional 0.080 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
Copyright © 2007
10-03-2007 REV C
