DC–20 GHZ MMIC SPDT REFLECTIVE SWITCH
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@f i l c s.com Website: www.filtronic.com
1
Preliminary Datasheet v2.2
FMS2024
FEATURES:
• Availab le in di e form
• Low Insertion loss 1.6 dB at 20GHz typical
• Very high isolation 37 dB at 20GHz typical
• Excellent low control voltage performance
GENERAL DESCRIPTION:
The FMS2024 is a low loss high isolation
broadband single pole single throw Gallium
Arsenide s witch d esign ed for us e in broad band
comm unications inst rum entation and electr onic
warfare applications. The die is fabricated
using the Filtronic FL05 0.5µm switch process
technology that offers leading edge
performance optimised for switch applications.
FUNCTIONAL SCHEMATIC:
V2 V1 RFO1
V3 V4 RFO2
RFIN
V11
V22
V33
V44
V2 V1 RFO1
V3 V4 RFO2
RFIN
V11
V22
V33
V44
TYPICAL APPLICATIONS:
• Broadband communications
• Instrumentation
• Electro nic war f ar e (ECM, ESM)
ELECTRICAL SPECIFICATIONS (based on on-wafer meas urem ents ) :
PARAMETER CONDITIONS MIN TYP MAX UNITS
Insertion Loss (DC-10) GHz, Small Signal 1.2 dB
Insertion Loss (10-15) GHz, Small Signal 1.35 dB
Insertion Loss (15-20) GHz, Small Signal 1.55 dB
Isolation (DC-10) GHz, Small Signal 48 dB
Isolation (10-15) GHz, Small Signal 42 dB
Isolation (15-20) GHz, Small Signal 37 dB
Return Loss (DC-20) GHz, Small Signal 15 dB
Switching speed 50% control to 10% / 90% RF 10 ns
P1dB -5V control 26 dBm
Note: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@f i lcs.com Website: www.filtronic.com
2
Preliminary Datasheet v2.2
FMS2024
ABSOLUTE MAXIMUM RATINGS:
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PAD LAYOUT:
PARAMETER SYMBOL ABSOLUTE
MAXIMUM
Max Input Power Pin +38dBm
Control Voltage Vctrl +XV
Operating Temp Toper -40°C to +100°C
Storage Temp Tstor -55°C to +150°C
PAD
NAME DESCRIPTION
PIN
COORDINATES (µm)
RFIN RFIN 116,1055
RFO1 RFOUT1 1408,1929
RFO2 RFOUT2 1408,181
V1 V1 645, 1929
V2 V2 395, 1929
V3 V3 395, 181
V4 V4 645, 181
V11 V11 1753,1608
V22 V22 1753,1408
V33 V33 1753,702
V44 V44 1753,502
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH
(µm) MIN. BOND PAD OPENING
(µm x µm )
1910 x 2110 100 150 116 x 116
TRUTH TABLE:
CONTROL LINES RF PATH
V1 OR V11 V2 OR V22 V3 OR V33 V4 OR V44 RFIN-RFO1 RFIN-RFO2
-5V 0V -5V 0V On Off
0V -5V 0V -5V Off On
0V -5V -5V 0V Off Off
Note: -5V ± 0.2V; 0V ± 0.2V
Note: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@f i lcs.com Website: www.filtronic.com
3
Preliminary Datasheet v2.2
FMS2024
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C unless otherwise stated
1 6 11 16 20
Frequency (GHz)
Insertion Loss (dB)
-2
-1.5
-1
-0.5
0
16111620
Freq uenc y (GHz)
Isol ation (d B)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
16111620
Fre quency (GHz)
Input Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
16111620
Fre quency (GHz)
Output Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
15 16 17 18 19 20 21 22 23 24 25 26
Input Power ( dBm)
Loss(dB)
10 GHz
20 GHz
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@f i lcs.com Website: www.filtronic.com
4
Preliminary Datasheet v2.2
FMS2024
PREFERRED ASSEMBLY INSTRUCTIONS: HANDLING
PRECAUTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
To avoid damage to the devices care should
be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing. These
devices should be treated as Class 1A (0-500
V) as defined in JEDEC Standard No. 22-
A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
The back of the die is metallised and the
recommended mounting method is by the use
of solder or conductive epoxy. If epoxy is
selected then it should be applied to the
attachment surface uniformly and sparingly to
avoid encroachment of epoxy on to the top
face of the die and ideally should not exceed
half the chip height. For automated dispense
Ablestick LMISR4 is recommended and for
manual dispense Ablestick 84-1 LMI or 84-1
LMIT are recommended. These should be
cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing
only. If possible the curing oven should be
flushed with dr y nitro gen .
APPLICATION NOTES & DESIGN DATA:
Applicat ion No tes and des ign data includ ing S-
parameters are available; please contact
Filtronic Compound Semiconductors Ltd.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
Thermosonic wedge bonding and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER DESCRIPTION
FMS2024-000 Die in Waffle- p a c k
(Gel-pak available on request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The ph ysical len gth of the bond wir es should be
minimised especially when making RF or
ground connections.
