DS21217 Rev. D-2 1 of 2 GBJ8005-GBJ810
www.diodes.com ã Diodes Incorporated
Features
GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim Min Max
A29.70 30.30
B19.70 20.30
C17.00 18.00
D3.80 4.20
E7.30 7.70
G9.80 10.20
H2.00 2.40
I0.90 1.10
J2.30 2.70
K3.0 X 45°
L4.40 4.80
M3.40 3.80
N3.10 3.40
P2.50 2.90
R0.60 0.80
S10.80 11.20
All Dimensions in mm
_
B
C
D
EEG
H
K
J
I
L
M
N
P
R
S
A
Characteristic Symbol GBJ
8005
GBJ
801
GBJ
802
GBJ
804
GBJ
806
GBJ
808
GBJ
810 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Forward Rectified Output Current
@ TC = 110°CIO8.0 A
Non-Repetitive Peak Forward Surge Current, 8.3ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM 170 A
Forward Voltage per element @ IF = 4.0A VFM 1.0 V
Peak Reverse Current @ TC = 25°C
at Rated DC Blocking Voltage @ TC = 125°CIR5.0
500 mA
I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 120 A2s
Typical Junction Capacitance per Element (Note 2) Cj55 pF
Typical Thermal Resistance Junction to Case (Note 3) RqJC 1.6 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
·Case: Molded Plastic
·Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
·Polarity: Molded on Body
·Mounting: Through Hole for #6 Screw
·Mounting Torque: 5.0 in-lbs Maximum
·Weight: 6.6 grams (approx.)
·Marking: Type Number
Mechanical Data
·Glass Passivated Die Construction
·High Case Dielectric Strength of 1500VRMS
·Low Reverse Leakage Current
·Surge Overload Rating to 170A Peak
·Ideal for Printed Circuit Board Applications
·Plastic Material - UL Flammability
Classification 94V-0
·UL Listed Under Recognized Component
Index, File Number E94661
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
DS21217 Rev. D-2 2 of 2 GBJ8005-GBJ810
www.diodes.com
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
. 2 T
y
pical Forward Characteristics
(
per element
)
I , INSTANTANEOUS FORWARD CURRENT (A)
F
T= 25°C
j
0
40
80
120
160
180
110 100
I , PEAK FWD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T = 150°C
j
Single half-sine-wave
(JEDEC method)
10
100
1
1 10 100
C , JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
f = 1MHz
T = 25°C
j
0.1
1.0
10
100
1000
02040 6080
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 T
yp
ical Reverse Characteristics
T = 50°C
j
T = 125°C
j
T = 100°C
j
T = 25°C
j
0
2
4
10
25 50 75 100 125 150
I , AVERAGE RECTIFIED CURRENT (A)
O
T , CASE TEMPERATURE (°C)
C
Fi
g
. 1 Forward Current Deratin
g
Curve
8
6
With heatsink
Without heatsink
Resistive or
Inductive load
