THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO THE PNP TYPE BC160, BC161 RESPECTIVELY. BC140 BC141 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 fe ee et oe artnet MICRO ELECTRONICS LID. *TELEPHONE:- 3-430481-6 FAX: 341032%. -3-693363, 3692423 CEB ABSOLUTE MAXIMUM RATINGS BCl40 8 BC141 Collector-Emitter Voltage (VBE=0) VcES soy iooy ? Collector-Emitter Voltage (IB=0) VCEO 40V 60V Emitter-Base Voltage VEBO Tv. OTV Collector Current I LA Total Power Dissipation (@ Tc <45C) Ptot 3.7W (@ TA <45C) 650mW Operating Junction & Storage Temperature Pi Tstg +55 to 175C ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) BC140 BC141 PARAMETER SYMBOL MIN TYP MAX|MIN TYP MAX UNIT! TEST CONDITIONS Collector-Emitter Breakdown Voltage | BVcEs 80 100 V | Ic=O0.1lmA VBR=0 Collector-Emitter Breakdown Voltage | LVczo * | 40 60 v |Ic=50mA IB=0 Emitter-Base Breakdown Voltage BVEBO 7 7 V | Im=O.1mA Ic=0 Collector Cutoff Current ICES 100 100 | nA | Vors=60V : 100 100 | pA | Vogg=60V Ta=1 508) Collector-Emitter Saturation Voltage) VcE(sat)* 1 1|/V |Ic=1lA Ip=0.14 lt Base-Emitter Voltage VER * 1.8 1.8 \Ic=lA Von=1vV |} D.C. Current Gain Gropp 6] Hprr * 40 100; 40 100 Ic=LOOmA VcoE=1V Group 10 63 160] 63 160 Group 16 100 250} 100 250 Group 25 160 400 | 160 400 HPRE 1 | | pg Matched Pair Ratio mo 1.41 1.41 Ic=100mA VCE=1V || Current Gain-Bandwidth Product fm 50 150 50 150 MHz | Ic=50mA Vop=1l0V | Collector-Base Capacitance Cob 10 25 10 25] pF Vop=10V Tg=0 . f=1MHz Hmitter-Base Capacitance Cib 80 80 PF | VEep=0.5V Ic=0 f=1MHz | *~,|Turn-On Time ton 250 250 | nS | Ic=100mA Ipl=5SmAl} Tarn-Off Time toff 850 850 |} nS | I=l00mA se Test + Pulse Width=0.5mS, Duty Cre eae to ROAD, KWUN TONG, HONG KONG. TELEX <#3510 =" KWUN TONG P. 0, BOX69477 CABLE ADDRESS MICROTRON . a , 2 $e - = : nett SWITCHING TIME TEST CIRCUIT (ton, toff) ee 7 Veg SV hv ave 1 ap<t5ns fclins | S02 R502 TYPICAL CHARACTERISTICS a Ptot vs 7A Hpg (NORMALIZED) vs Ic 4 220 \ Tam25C Pulse Test 4 \ q 1 e 6 Ptot . 8 < 2 (w) Xe 1.2 oT _ i 2 Nx Acer ~~ # \3 = wiv , - K. we 0 8 you* NS Ba 1 vs A= ww tlo Feat Ve 0.4 . 4 Sink KO 0 LN a) s 50 100 150. 200 a 1 10 100 1000 | oe _ VcE(sat) & VBE(sat) & VBE vs IC fp vs Ic 1.0 6 e qcbe+;| ||| Pulse Test VOLT (MHz) 0.4 1 E 0.2 , | Von(sat 4 7@ Ic=1ot | 0 - , ue : 1 10 100 1000 1 10 100 1000 i *C (ma) - oo. T (ma) | 1.78.28100A/B_