Ordering number : ENA1067 TIG067SS N-Channel IGBT http://onsemi.com 400V, 150A, VCE(sat);3.8V Single SOIC8 Features * * * Low-saturation voltage Enhansment type High speed switching * * * 4.0V drive Built-in Gate-to-Emitter protection diode Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Emitter Voltage (DC) Collector-to-Emitter Voltage (Pulse) Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) VCES VCESP VGES VGESP Conditions Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 400 V PW1ms 450 V 6 V PW1ms 8 V CM=600F ICP dv / dt Maximum Collector-to-Emitter dv / dt Ratings VCE320V, starting Tch=25C When mounted on FR4 substrate (11,680mm2x1.6mm) 150 A 1500 V / s 1.2 W 150 C -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7072-002 * Package : SOIC8 * JEITA, JEDEC : SC-87, SOT-96 * Minimum Packing Quantity : 2500 pcs./reel TIG067SS-TL-2W 4.9 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 0.715 0.22 5 3.9 6.0 8 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector Packing Type: TL TIG 067 TL LOT No. Electrical Connection 5 to 8 SOIC8 4 Semiconductor Components Industries, LLC, 2013 September, 2013 Marking 1 to 3 O0312PJ TKIM TC-00002673 No. A1067-1/9 TIG067SS Electrical Characteristics at Ta=25C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V VCE=10V, IC=1mA Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Fall Time tf Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=6V, VCE=0V 0.4 IC=150A, VGE=4V 3.8 VCE=10V, f=1MHz IC=150A, VCC=320V, Resistor load VGE=4V, RG=36 10 A 10 A 1.0 V 5 V 5100 pF 59 pF 43 pF 270 ns Fig1 Large Current R Load Switching Circuit RL CM + VCC RG TIG067SS 4V 0V 100k Note1. Gate Series Resistance RG 36 is recommended for protection purpose at the time of turn OFF. However, if dv / dt 1500 / s is satisfied at customer's actual set evaluation, RG < 36 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 1500V / s to protect the device when it is turned off. Ordering Information Device TIG067SS-TL-2W Package Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free No. A1067-2/9 TIG067SS Tc = Collector Current, IC -- A 125 100 75 50 25 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 75 50 8 7 6 5 IC=150A 130A 3 100A 2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tc=25C 9 8 7 6 5 IC=150A 4 130A 3 100A 2 1 1.0 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 5.0 IT15737 VCE(sat) -- Tc 6 Tc= 75C 5.0 IT15735 VCE -- VGE IT15736 VCE -- VGE 10 0.5 10 Tc= --25C 4 0 Gate-to-Emitter Voltage, VGE -- V VGE=4V 9 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 100 0 10 9 1 1.0 Collector-to-Emitter Voltage, VCE -- V C 25 C 75 125 IT15734 VCE -- VGE 10 8 7 6 5 IC=150A 130A 4 3 100A 5 0A I C=15 130A 4 100A 3 2 2 1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V VCE=10V IC=1mA 0.8 --25 0 25 50 100 75 125 Case Temperature, Tc -- C IT15738 VGE(off) -- Tc 0.9 1 --50 5.0 150 IT15739 Cies, Coes, Cres -- VCE 10000 7 5 f=1MHz Cies 3 0.7 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 150 25 Collector-to-Emitter Voltage, VCE -- V 0 --2 3. 0V 4.0 V .0 V 150 VCE=5V 175 2.5V VG E=5 Collector Current, IC -- A 175 IC -- VGE 200 Tc=25C 5 C IC -- VCE 200 0.6 0.5 0.4 0.3 0.2 2 1000 7 5 3 2 100 7 5 Coes Cres 3 0.1 0 --50 2 --25 0 25 50 75 100 Case Temperature, Tc -- C 125 150 IT15540 10 0 2 4 6 8 10 12 14 16 18 Collector-to-Emitter Voltage, VCE -- V 20 IT15741 No. A1067-3/9 TIG067SS SW Time -- ICP Switching test circuit Fig.1 VGE=4V VCC=320V td (off) RG=36 Switching Time, SW Time -- ns 2 1000 7 5 tf 3 2 tr 100 7 td(on) 5 3 3 5 7 2 100 dv / dt -- RG 3000 5 3 tr 2 ) t d(on 100 7 5 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80 Gate Series Resistance, RG -- CM -- ICP 800 90 200 100 100 120 IT15924 Tc70C CM=600F 140 120 100 80 60 40 20 1 2 3 4 5 6 7 8 Gate-to-Emitter Voltage, VGE -- V 9 IT15746 dv / dt -- Turn OFF IC 2000 Tc70C VCE=320V 1750 dv / dt, dv / dt -- V / s 300 80 160 IT15745 400 60 ICP -- VGE 0 0 100 Tc=70C 500 40 180 Tc=25C 600 20 Gate Series Resistance, RG -- VGE=4V VCE=320V 700 0 IT15923 Switching test circuit Fig.1 VGE=4V VCC=320V ICP=150A 2500 Turn OFF dv / dt -- V / s 7 2 3 Collector Current (Pulse), ICP -- A 2 Collector Current (Pulse), ICP -- A Maximum Capacitor, CM -- F 1000 3 10 10 1500 1250 1000 750 500 250 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 180 IT15747 PD -- Ta 1.4 Allowable Power Dissipation, PD -- W Switching test circuit Fig.1 VGE=4V VCC=320V f) t d(of ICP=150A CM=600F PW=50S tf 2 2 0 SW Time -- RG 3 Switching Time, SW Time -- ns 3 0 0 20 40 60 80 100 120 140 160 Turn OFF Collector Current, Turn OFF IC -- A 180 IT15748 When mounted on FR4 substrate (11,680mm21.6mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT16955 No. A1067-4/9 TIG067SS Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=VCE/t=VCE/100ns Overall waveform Enlarged picture of turn-off period Turn-off period V,I VCE Turn off VCE t=100ns ICP VCE Turn off IC IC t VCE Definition of Switching Time VGE VGE:90% VGE:10% t VCE VCE:90% VCE:10% VCE:10% t IC td(on) tr td(off) IC:90% IC:10% t tf No. A1067-5/9 TIG067SS Taping Specification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o. A1067-6/9 TIG067SS 7DSLQJ FRQILJXUDWLRQ * * * ** ** ** * s s s s s s &DUULHU WDSH VL]H XQLW PP s s s s 'HYLFH SODFHPHQW GLUHFWLRQ 3 LQ ,QGH [ 5HH O )HHG 5RXQG +R OH Feed D i rec t ion 7/ &D U U LH U 7DSH 3DFNLQJ W\SH7/ /HDGHU SRUWLRQ DQG WUDLOHU SRUWLRQ XQLW PP RU PRUH 7UDLOHU SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ ,GOH SRUWLRQ RU PRUH /HDGHU SRUWLRQ RU PRUH &RYHU WDSH /HDGHU SRUWLRQ RU PRUH No. A1067-7/9 TIG067SS Outline Drawing TIG067SS-TL-2W Land Pattern Example Mass (g) Unit 0.082 mm * For reference Unit: mm 5.60 1.75 0.65 1.27 No. A1067-8/9 TIG067SS ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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