SSM3K44MFV
2018-05-17
1
N T
1
2
3
1
2
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K44MFV
High Speed Switching Applications
Analog Switch Applications
• AEC-Q101 qualified (Note 1)
• Compact package suitable for high-density mounting
• Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V)
: RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Note 1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS
30 V
Gate-source voltage VGSS
±20 V
Drain current
DC ID
100
mA
Pulse IDP
200
Drain power dissipation (Ta = 25°C) PD (Note 1)
150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Marking Equivalent Circuit
Handling Preca ution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 2-1L1B
Weight: 1.5 mg (typ.)
1. Gate
2. Source
3. Drain
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4
0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
0.5mm
0.45mm
0.45mm
0.4mm
Start of commercial production
2009-
12
SSM3K44MFV
2018-05-17
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Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±14 V, VDS = 0 V ±1 µA
Drain-source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 V 30 V
Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 1 µA
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 1.5 V
Forward transfer admittance Yfs VDS = 3 V, ID = 10 mA 25 mS
Drain-Source on-resistance RDS (ON)
ID = 10 mA, VGS = 4 V 2.2 4.0 Ω
ID = 10 mA, VGS = 2.5 V 4.0 7.0
Input capacitance Ciss
VDS = 3 V, VGS = 0 V, f = 1 MHz
8.5
pF Reverse transfer capacitance Crss 5.3
Output capacitance Coss 9.4
Switching time
Turn-on time ton VDD = 5 V, ID = 10 mA,
VGS = 0 to 5 V
50
ns
Turn-off time toff 200
Switching Time Test Circuit
(a) Test circuit (b) VIN
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 µA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration when using the device.
(c) V
OUT
ton
90%
10%
0 V
5 V
10%
90%
toff
tr
tf
VDD
VDS (ON)
V
DD = 5 V
D
uty
≤
1%
Input: t
r, tf < 5 ns
(Z
out = 50 Ω)
Common Source
Ta = 25
°C
VDD
Output
Input
5 V
0
10 µs
50
Ω
RL
SSM3K44MFV
2018-05-17
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Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage Vth
(V)
0
−25
0.4
2
50 150
125
0
0.2
1.2
1.6
75
1
Common Source
ID = 0.1 mA
VDS = 3 V
0.8
1.8
25 100
0.6
1.4
Drain-Source voltage VDS (V)
I
D
– V
DS
Drain current ID
(mA)
0
0
100
250
1 2 1.5
0.5
50
150
200
VGS = 2.1 V
2.3
2.5
2.7
Common Source
Ta = 25°C
3
4
10
Drain-Source ON-resistance
R
DS (ON)
(Ω)
Gate-source voltage VGS (V)
R
DS (ON)
– V
GS
0
0
2
6
4 10 8 2
1
4
5
6
3
25°C
Ta =100°C
−25°C
Common Source
ID = 10 mA
Drain-Source ON-resistance
R
DS (ON)
(Ω)
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
0
−25
2
8
50 150
125
0
1
5
6
75
4
4 V
VGS = 2.5 V
Common Source
ID = 10 mA
3
7
25 100
Gate-Source voltage VGS (V)
I
D
– V
GS
Drain current ID
(mA)
0.01
0
1
1000
2 4 3 1
0.1
10
100
Ta = 100°C
Common Source
VDS = 3 V
−25°C
25°C
Drain current ID (mA)
R
DS (ON)
– I
D
Drain-Source ON-resistance
R
DS (ON)
(Ω)
4 V
VGS = 2.5 V
0
0
4
10
80 200
160
40
2
6
8
120
Common Source
Ta = 25°C
SSM3K44MFV
2018-05-17
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Ambient temperature Ta (°C)
P
D
– Ta
Drain
power dissipation
P
D
(mW)
0
0
100
250
160 40
50
150
200
20 60 80 100 140 120
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.585 mm2 )
Drain current ID (mA)
Y
fs
– I
D
Forward transfer admittance
Y
fs
(mS)
1
1
10
30
1000
100
1000
10 100
3
5
50
300
500
Common Source
VDS = 3 V
Ta = 25°C
Drain-Source voltage VDS (V)
I
DR
– V
DS
Drain reveres current I
DR
(mA)
0
100
250
50
150
200
0 −1.4
−0.4
−0.2 −0.6
−0.8 −1 −1.2
Common Source
VGS = 0 V
Ta = 25°C
G
D
S
IDR
Switching time
t (ns)
Drain current ID (mA)
t – I
D
10
0.1
100
300
10000
1000
100 1 10
30
50
500
3000
5000
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
tr
ton
tf
toff
Capacitance C (pF)
Drain-Source voltage VDS (V)
C – V
DS
0.1
0.1
1
3
100
10
100 1 10
0.3
0.5
5
30
50
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
Coss
Ciss
Drain current ID (mA)
t – I
D
Switching time
t (ns)
10
0.1
100
300
10000
1000
100 1 10
30
50
500
3000
5000
Common Source
VDD = 5 V
VGS = 0 to 5 V
Ta = 25°C
tr
ton
tf
toff
SSM3K44MFV
2018-05-17
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RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILI TY FOR CUSTOMERS' PRODUCT DES IGN OR
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• PRODUCT IS NEI THE R INTENDE D NO R WARRANTED FOR USE I N EQ UIPMENTS OR SYSTEMS THAT RE QUIRE
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