Data Sheet 1 2001-01-01
Silicon Dual Flip Chip Schottky Diode BAT 14-077D
Preliminary Data Sheet
• Dual Schottky medium Barrier Mixer Diode
• For W-band application up to 80 GHz
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 14-077D – Q62702-D1354 – – – FLIP CHIP
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR3V
Forward current IF25 mA
Total power dissipation (TS = 25 °C) Ptot 20 mW
Junction temperature Tj150 °C
Operating temperature range Top – 40 … + 150 °C
Storage temperature Tstg – 55 … + 150 °C
EHT09236
GaAs Components
BAT 14-077D
Data Sheet 2 2001-01-01
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
DC Characteristics
Breakdown voltage V(BR) 3–– VI(BR) = 100 µA
Forward voltage VF–0.4 0.5 V IF = 100 µA
AC Characteristics
Diode capacitance1) CT–30 –fF VR = 0 V
Forward resistance RF–710ΩIF = 10 mA
1) Simulated values test conditions t.b.f.
GaAs Components
BAT 14-077D
Data Sheet 3 2001-01-01
Chip Layout
EHT09237
Nitride-passivation
(height: 10 µm)
Gold-bumps
550 µm
420 µm
250 µm
125 µm
FLIP CHIP
Sorts of Packing
Package outlines for tubes, trays etc. are contained in
our Data Book “Package Information”.Dimensions in mm
