Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet * * Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-077D - Q62702-D1354 EHT09236 Pin Configuration - - - Package FLIP CHIP Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 3 V Forward current IF 25 mA Total power dissipation (TS = 25 C) Ptot 20 mW Junction temperature Tj 150 C Operating temperature range Top - 40 ... + 150 C Storage temperature Tstg - 55 ... + 150 C Data Sheet 1 2001-01-01 GaAs Components BAT 14-077D Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions DC Characteristics Breakdown voltage V(BR) 3 - - V I(BR) = 100 A Forward voltage VF - 0.4 0.5 V IF = 100 A Diode capacitance1) CT - 30 - fF VR = 0 V Forward resistance RF - 7 10 IF = 10 mA AC Characteristics 1) Simulated values test conditions t.b.f. Data Sheet 2 2001-01-01 GaAs Components BAT 14-077D Chip Layout FLIP CHIP 250 m 125 m 420 m 550 m Gold-bumps (height: 10 m) Nitride-passivation EHT09237 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Data Sheet 3 Dimensions in mm 2001-01-01