112 Optoisolators QUICK REFERENCE CHART MIN. MIN. MIN. OUTPUT CURRENT DC VOLTAGE TYPICAL PACKAGE TRANSFER ISOLATION RATING BANDWIDTH OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE RATIO VOLTAGE (BYCEO) R, = 1002 TRANSISTOR MCT2 A 6 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz TRANSISTOR MCT2E A 6 LEAD PLASTIC DIP 20% 2500 V 30V 150 kHz TRANSISTOR MCT210 A 6 LEAD PLASTIC DIP 150% 4000 V 30V 150 kHz TRANSISTOR MCT26 A 6 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz TRANSISTOR MCT4 Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT4R* Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT6 B 8 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz DUAL CHANNEL TRANSISTOR MCT66 B 8 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz DUAL CHANNEL , TRANSISTOR 4N25 F 6 LEAD PLASTIC DIP 20% 2500 V 30V 300 kHz TRANSISTOR 4N26 F 6 LEAD PLASTIC DIP 20% 1500 V 30V 300 kHz TRANSISTOR 4N27 F 6 LEAD PLASTIC DIP 10% 1500 V 30V 300 kHz TRANSISTOR 4N28 F 6 LEAD PLASTIC DIP 10% 500 V 30V 300 kHz TRANSISTOR 4N35 F 6 LEAD PLASTIC DIP 100% 3550 V 30V 150 kHz TRANSISTOR 4N36 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 150 kHz TRANSISTOR 4N37 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 150 kHz DARLINGTON TRANS. MCA230 A 6 LEAD PLASTIC DIP 100% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA231 A 6 LEAD PLASTIC DIP 200% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA255 A 6 LEAD PLASTIC DIP 100% 1500 V 55V 10 kHz DARLINGTON TRANS. 4N29 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N30 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N31 F 6 LEAD PLASTIC DIP 50% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N32 F 6 LEAD PLASTIC DIP 500% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N33 F 6 LEAD PLASTIC DIP 500% 1500 V 30V 30 kHz *Reliability conditioned to MIL-STD-883, Method 5005/B, 100% pre-conditioning. FORWARD MAX. pc BLOCKING TURN-ON PACKAGE ISOLATION VOLTAGE CURRENT OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (VDRRM) (Ip) SCR MCS2 A 6 LEAD PLASTIC DIP 1500 V 200 V 14.0 mA SCR MCS2400 A 6 LEAD PLASTIC DIP 1500 V 400 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) MCS6200 B 8 LEAD PLASTIC DIP 1500 V 200 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) McCS6201 B 8 LEAD PLASTIC DIP 2500 V 200 V 14.0 mA MIN. MIN. DC BINARY MAX. TYP. OUTPUT PACKAGE ISOLATION DATA RATE TRIGGER HYSTERESIS FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (BDR) (Ip) (Alp) LOGIC GATE MCL601 B 8 LEAD PLASTIC DIP 2000 V 0.10 MHz 5.0mA 1.0 mA OPEN COLLECTOR LOGIC GATE MCL611 B 8 LEAD PLASTIC DIP 2000 V 1.0 MHz 15.0mA 5.0 mA OPEN COLLECTOR (TOTEM POLE OUTPUT MCL600 & MCL610 available February, 1977.) MAX. OUTPUT PACKAGE PACKAGE COLLECTOR TYPICAL DARK CURRENT FORMAT PRODUCT KEY TYPE CURRENT (Ic) BANDWIDTH (IcEo) TRANSISTOR MCT8 E rene LIMIT 200 uA @If= 20 mA, VcE=10V 150 kHz 100 nA TRANSISTOR MCT81 E etn LIMIT 50 uA @ Ip = 20 mA, Vox =10V 200 kHz 100 nA IT DARLINGTON MCA7 D REFLECTIVE 50 uA @Ip=50 mA, VCR =5 V 0.8 kHz 100 nA SENSOR SWITCH DARLINGTON MCA8 E Sach LIMIT 2mA @Ip=16mA, Vcp=1V 0.8 kHz 100 nA WITCH DARLINGTON MCA81 E SLOTTED LIMIT 1.6 mA @Ip= 50 mA, Vof=1V 1.5 kHz 100 nA SWITCH151 PHOTOTRANSISTOR MCT2 Nise: WUE OPTO-ISOLATOR MCT2E PRODUCT DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. It is mounted in a six-lead plastic DIP package. PACKAGE DIMENSIONS APPLICATIONS L~we-0,340 NOM. ewe Le oors MAX. jeeeal ; Th 0.250 0.30 +.001 AC line/digital togic isolator Digital logic/digital logic isolator Telephone/telegraph line receiver Twisted pair line receiver High frequency power supply feedback control SILICONE PLASTIC C807 9.100 Relay contact monitor 6) BASE Power supply mionitor KE) co.tector UL Approved Product File 50151 (3) emitter 018*.002 NOTE: ALL DIMENSIONS tN INCHES AND ARE TYPICAL EXCEPT c807 AS NOTED ABSOLUTE MAXIMUM RATINGS Storage temperature 55C to 150C Operating temperature -55C to 100C Lead temperature (Soldering, 10 sec) 260C Input Diode Output Transistor Forward DC current............... 60 mA Power dissipation at 25C ambient ..... 200 mW Reverse current... 2... eee ee eee l1OYWA Derate linearly from 25C... eee eee 2.6 mw/Cc Peak forward current Input to output voltage isolation MCT2 1500 volts DC (1 us pulse, 300 pps) . rrr 3.0A InputtooutputvoltageisolationMCT2E 2500 volts DC Power dissipation at 25 of ambient . . 200 mW Total package power dissipation at Derate linearly from 25C... . 1. 2. 6 mw/? Cc 25 C ambient (LED plus detector) ..... 250 mw Derate linearly from 25 C........... 3.3 mw/? Cc Collector-Emitter Current (log). -.--.---- 50 mA ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Temperature Unless Otherwise Specified) CHARACTERISTIC SYMBOL GUAR. TYP. GUAR. UNITS TEST CONDITIONS MIN. MAX, Input Diode Forward Voltage Ve 1.25 1.50 Vv lp =20mA Reverse Breakdown Voltage BVe 3.0 25 Vv [R=10 uA Junction Capacitance Cy 50 pF Ve=0V Reverse Leakage Current Ip -O1 10 HA VRa=3.0V Output Transistor DC Forward Current Gain hee 100 250 VeEe=5 V, Ie =100 WA Collector To Emitter Break- down Volt. BVceo 30 85 Vv I=1.0 mA, Ip =0 Collector To Base Break- down Voltage BVcBo 70 165 Vv Ic =10 uA Emitter to Collector Break- down Voltage BVeco 7 14 Vv 1c =100 pA, 1-=0 Collector To Emitter, Leak- age Current leeo 5 50 nA Vce=10V, le=0, Note 5 Collector To Base Leak- age Current loBpo 0.1 20 nA Vcogzld V, Ip=062 MCT2 MCT2E ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Ternperature Unless Otherwise Specified) CHARACTERISTIC SYMBOL GUAR. TYP. GUAR. UNITS TEST CONDITIONS MIN. MAX. Capacitance Collector To Coe Emitter 8 pF VcE=0 Capacitance Collector To Copo Base 20 pF VegtlOVv Capacitance Emitter To Base Cero 10 pF Vee-0 Coupled ' DC Collector Current Transfer Ce 20 60 % Vee=10V, lp=10mA, Note 1 Ratio DC Base Current Transfer Ratio les, 35 % Ve p=10 V, Ip-10 MA Isolation Voltage MCT2 1500 2300 VDC 800 VRMS f=60 Hz Isolation Voltage MCT2E By (1-0) 3550 voc Isolation Resistance 1012 1012 22 V\.9=500 V Isolation Capacitance 5 pF f= lIMHz Collector-Emitter, Saturation Voltage Vce (sat) 0.24 0.4 Vv Io = 2.0 mA, Ip = 16 MA Bandwidth (see note 2) By 150 KHz I,=2 mA, V._-=10 V, RL=100 Q (Circuit No. 1) SWITCHING TIMES TYP. UNITS TEST CONDITIONS Non-Saturated Collector Detay Time tg 0.5 Ms R_=100 Q, Ile =2 MA, Vec=lOV Rise Time t, 2.5 (Circuit No. 1) Storage Time t, 0.1 Fall Time ty 2.6 Non-Saturated Collector Delay Time ty 2.0 Ms RL =1 KQ, Ie=2 MA, Veco =10V Rise Time ty 15 (Circuit No. 1) Storage Time t, 0.1 Fall Time ty 15 Saturated ton (from 5 V to 0.8 V) ton (SAT) 5 Us RL =2 KQ, lp=15 mA, Vee=5V t off (from SAT to 2.0 V) tog (SAT) 25 Rg=open (Circuit No. 2) Saturated ton (from 5 V to 0.8 V) ton (SAT) 5 us Ri =2 KQ, Ilp=20 MA, Veen =5 V t off (from SAT to 2.0 V) tore (SAT) 18 Rg=100 KO (Circuit No. 2) Non-Saturated Base Rise Time t, 175 ns R_=1 KQ, Ve g=l0V Fall Time t 175 ns Vec O) Re oF Ty. o-_ ; 2, | ve, V out V out Ru -_ c808 ~~ cog Circuit 1 Circuit 2MCT2 MCT2E 13 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Uniess Otherwise Specified) 20s = 20mA le =10mA { COLLECTOR CURRENT DETECTOR (mA) Vce COLLECTOR VOLTAGE DETECTOR (VOLTS) Fig. 1 Collector Current vs, cen Collector Voltage (for Typical CTR 30%) HIGH CURRENT TRANSFER RA = NORMALIZED CURRENT TRANSFER RATIO % 60 40 20 O 40 60 80 AMBIENT TEMPERATURE (C) C813 Fig. 4 Current Transfer Ratio vs, Temperature 4 3 2 9 STORAGE B 107 1 8 w 6 = 4 o 3 FALL TIM = 2 =x e E107? RISE TIME 6 8100K Rg -~ BASE RESISTANCE 2 C816 Fig. 7 Switching Time vs. Base Resistance lo =40mA TEST CIRCUIT GEN INPUT PULSE PW= 2us DUTY CYCLE = t= 10ns te= 10.ns c819 Fig. 10 Circuit for Figure 7 I./lp CURRENT TRANSFER RATIO % : 6 Jp ~ FORWARD CURRENT mA cai Fig. 2 Current Transfer Ratio vs. Forward Current COLLECTOR CURRENT {mA) wK toK 100K 1 FREQUENCY (Hz) C3814 Fig. Collector Current vs. Frequency BVcex BREAKDOWN VOLTAGE V OF ALL UNITS 100K 200K 500K Ree BASE EMITTER RESISTANCE 2 C817 Fig. 8 Collector Emitter Breakdown Voltage vs. Base Resistance Vie | | 90% 'N 50% oe ov 10% | ov 10% | 10% =| Vout ! et 90% wt ome c820 Fig. 11 Waveforms for Figure 7 VOLTAGE-kV lceo ~ LEAKAGE CURRENT ~ A 104 sl x | Hp 10-4 LL AL L YA 10-7 iy = vee WY T | Vce= siveT A 10-2 Vee = 28V4 \Y Ti i ot Fo) vce = 104 10C, | | | ~20-10 0 10 20 30 40 50 60 70 80 90 100 Ta TEMPERATURE C 812 Fig. 3 Dark Current vs. Temperature n o Ry = 10002 SWITCHING TIME (us) - m @ n 0.1 0.206.304 060810 2 3 4 567810 COLLECTOR CURRENT Ic (mA} C815 Fig. 6 Switching Time vs. Collector Current V ce tsar) SATURATION VOLTAGE . : Vice (sat; VS. le vs. Ip 5 ip FORWARD CURRENT mA C818 Fig. 9 Saturation Voltage vs. Forward Current MAX. DC VOLTS kV UNITS MAX. DC VOL 1.5 kV UNITS 1.0 RMS TS V UNITS MAX. RMS VOL ITs 0.1 1 10 10) 1K FREQUENCY Hz C458 Fig. 12 Steady-State AC Voltage Limit of fsolation Dielectric4 MCT2 MCT2E TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25 C Free Air Temperature Unless Otherwise Specified) : VoL vs. FORWARD CURRENT (Vr vs. le Vce isat) COLLECTOR SATURATION a VOLTAGE (VOLTS) Ve FORWARD VOLTAGE-VOLTS Ip = Ta = 25C Vceisat) SATURATION VOLTAGE V 4H) 1 10 20 2 T, AMBIENT TEMPERATURE C C821 t COLLECTOR CURRENT (mA) C822 ts FORWARD CURRENTmA 823 Fig: 13 Saturation Voltage vs. Fig. 14 Saturation Voltage vs. Fig. 15 Forward Voltage vs. Temperature Collector Current Forward Current xe 100 Ip = 50 MA7T=Ie = 20 mA: t Lien Lame 9 LAT 7] ATI. = 10 mA = < a0 A 2 cc yy ' wi yy /| z 3 2 60 = < E / / g < & i o z = oO w 40 3 E Vee = 10V 5 3 / TA= 28C - S 20 3 < a w 10K OOK iM 0 4 8 12 16 20 (24 TIME HOURS 824 Ree BASE RESISTANCE -2 C825 Ve, volts c826 Fig. 16 Lifetime vs. Forward Current Fig. 17 Sensitivity vs. Base Resistance Fig. 18 Detector Typical hfg Curves OPERATING SCHEMATICS CONSTANT Ie = MODULATION CONSTAN lc Veg = 10 VOLTS PULSE 479 * Veg * 10 VOLTS INPUT INPUT _ rc ~~ 7 LED | 2. | DETECTOR Coe x a L L 4)! PULSE =-_ # OUTPUT OUTPUT _ -_| Ip . R, = 1000 R, = 1009 L = C827 7 C828 Modulation Circult Used to Obtain Output vs Frequency Plot Circuit Used to Obtain Switching Time vs Collector Current Plot NOTES 1. The current transfer ratio (IC/ i is the ratio of the detector collector current to the LED input current with Vcg at 10 volts. 2. The frequency at which ig is 3 dB down from the 1 kHz value. 3. Rise time (ty) is the time required for the collector current to increase from 10% of its final value, to 90%. Fall time (ty) is the time required for the collector current to decrease from 90% of its initial value, to 10%. For design information send for Application Notes Handbook. Use a 100 MOD resistor Reg for test stability. . . CTRg-CTR Normalized CTR degradation = CcrE, o Os