APM4550K Dual Enhancement Mode MOSFET (N- and P-Channel) Features * Pin Description N-Channel D1 D1 D2 D2 30V/7A, RDS(ON) = 20m (typ.) @ VGS = 10V S1 G1 S2 G2 RDS(ON) = 30m (typ.) @ VGS = 4.5V * P-Channel -30V/-5A, Top View of SOP - 8 RDS(ON) = 40m (typ.) @ VGS = -10V RDS(ON) = 62m (typ.) @ VGS = -4.5V * * * (7) (8) D1 D1 Super High Dense Cell Design (3) S2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (4) G2 (2) G1 Applications * S1 (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered N-Channel Systems D2 (5) D2 (6) P-Channel Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM4550 Assembly Material Handling Code Temperature Range Package Code APM4550 K : APM4550 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 1 www.anpec.com.tw APM4550K Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Rating Parameter N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage 20 20 7 -5 30 -20 2.5 -2 ID* Continuous Drain Current IDM* 300s Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation VGS=10V TA=100C 0.8 Thermal Resistance-Junction to Ambient RJA* A C -55 to 150 2 V A 150 TA=25C Unit W 62.5 C/W Note: *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM4550 Test Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250A N-Ch 30 - - VGS=0V, IDS=-250A P-Ch -30 - - - - 1 - - 30 - - -1 - - -30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IDSS N-Ch TJ=85C VDS=-24V, VGS=0V P-Ch TJ=85C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 VDS=VGS, IDS=250A N-Ch 1 1.5 2 VDS=VGS, IDS=-250A P-Ch -1 -1.5 -2 N-Ch - - 100 P-Ch - - 100 VGS=10V, IDS=7A N-Ch - 20 27.5 VGS=-10V, IDS=-5A P-Ch - 40 50 VGS=4.5V, IDS=5A N-Ch - 30 40 VGS=-4.5V, IDS=-4A P-Ch - 62 80 VGS=20V, VDS=0V 2 V A V nA m www.anpec.com.tw APM4550K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM4550 Test Conditions Min. Typ. Max. Unit Diode Characteristics a ISD=2.5A, VGS=0V N-Ch - 0.8 1.3 ISD=-2A, VGS=0V P-Ch - -0.8 -1.3 Reverse Recovery Time N-Channel ISD=7A, dlSD/dt=100A/s N-Ch - 8 - P-Ch - 13 - Reverse Recovery Charge N-Channel ISD=-5A, dlSD/dt=100A/s N-Ch - 3 - P-Ch - 5 - N-Ch - 2 - P-Ch - 8.3 - N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz N-Ch - 620 - P-Ch - 590 - N-Ch - 85 - P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz P-Ch - 95 - N-Ch - 65 - P-Ch - 70 - N-Ch - 6 11 P-Ch - 5 9 N-Ch - 10 18 P-Ch - 12 23 N-Ch - 22 41 P-Ch - 27 50 N-Ch - 3 6 P-Ch - 13 24 N-Channel VDS=15V, VGS=10V, IDS=7A N-Ch - 14 19 P-Ch - 11 15 N-Ch - 1.4 - P-Channel VDS=-15V, VGS=-10V, IDS=-5A P-Ch - 1.3 - N-Ch - 2.6 - P-Ch - 2.7 - VSD Diode Forward Voltage trr Qrr Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf ns nC b RG td(OFF) V VGS=0V,VDS=0V,F=1MHz N-Channel VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 Turn-off Delay Time P-Channel VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 Turn-off Fall Time Gate Charge Characteristics pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge nC Note a : Pulse test ; pulse width 300s, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 3 www.anpec.com.tw APM4550K Typical Operating Characteristics N-Channel Drain Current Power Dissipation 8 2.5 7 2.0 ID - Drain Current (A) Ptot - Power (W) 6 1.5 1.0 5 4 3 2 0.5 1 o o TA=25 C 0.0 0 20 TA=25 C,VG=10V 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 10 Rd s(o n) ID - Drain Current (A) 20 Tj - Junction Temperature (C) 100 300s 1ms 1 10ms 100ms 0.1 1s DC O TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 2 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4550K Typical Operating Characteristics (Cont.) N-Channel Output Characteristics 30 Drain-Source On Resistance 50 VGS= 4.5,5,6,7,8,9,10V 27 4V RDS(ON) - On - Resistance (m) 45 ID - Drain Current (A) 24 21 18 15 3.5V 12 9 3V 6 40 VGS=4.5V 35 30 25 VGS=10V 20 15 10 3 2.5V 0 0.0 5 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 30 IDS=250 ID=7A 1.4 Normalized Threshold Voltage 45 RDS(ON) - On - Resistance (m) 25 VDS - Drain-Source Voltage (V) 50 40 35 30 25 20 15 10 20 1.2 1.0 0.8 0.6 0.4 0.2 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM4550K Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.00 30 VGS = 10V IDS = 7A 10 o Tj=150 C 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 20m 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1000 10 Frequency=1MHz VDS=15V 900 VGS - Gate - source Voltage (V) 9 C - Capacitance (pF) 800 700 Ciss 600 500 400 300 200 100 0 Coss IDS=7A 8 7 6 5 4 3 2 1 Crss 0 0 5 10 15 20 25 30 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 0 6 www.anpec.com.tw APM4550K Typical Operating Characteristics (Cont.) P-Channel Power Dissipation Drain Current 6 2.5 5 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 0.5 4 3 2 1 o 0.0 o TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 20 Tj - Junction Temperature (C) 300s 1ms 1 10ms 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0 Tj - Junction Temperature (C) 50 10 TA=25 C,VG=-10V 0.1 1 10 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 2 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4550K Typical Operating Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 20 90 RDS(ON) - On - Resistance (m) 18 100 VGS=-4.5-5,-6,-7 -8,-9,-10V -4V -ID - Drain Current (A) 16 -3.5V 14 12 10 -3V 8 6 4 -2.5V 80 VGS=-4.5V 70 60 50 VGS=-10V 40 30 20 2 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 8 12 16 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 ID=-5A 90 20 IDS= -250 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (m) 4 -VDS - Drain - Source Voltage (V) 100 80 70 60 50 40 30 20 0 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 8 www.anpec.com.tw APM4550K Typical Operating Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 20 2.0 VGS = -10V IDS = -5A 10 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 40m 0.2 -50 -25 0 25 50 75 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 125 150 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 Frequency=1MHz VDS= -15V 9 C - Capacitance (pF) 600 -VGS - Gate - source Voltage (V) 700 Ciss 500 400 300 200 100 0 Coss Crss 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 IDS= -5A 9 www.anpec.com.tw APM4550K Package Information SOP-8 D E E1 SEE VIEW A h X 45 c A 0.25 b GAUGE PLANE SEATING PLANE A1 A2 e L VIEW A S Y M B O L SOP-8 MILLIMETERS MIN. INCHES MAX. A MIN. MAX. 1.75 0.069 0.004 0.25 0.010 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 e 0.049 1.27 BSC 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0 8 0 8 Note: 1. Follow JEDEC MS-012 AA. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension "E" does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 10 www.anpec.com.tw APM4550K Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.02.00 50 MIN. SOP-8 T1 C d D W E1 12.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 -0.00 -0.20 P0 P1 P2 D0 D1 T 4.00.10 8.00.10 2.0 0.05 1.5+0.10 -0.00 1.5 MIN. A0 B0 F 5.50.05 K0 0.6+0.00 6.400.20 5.200.20 2.100.20 -0.40 (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 2500 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 11 www.anpec.com.tw APM4550K Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 12 www.anpec.com.tw APM4550K Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process - Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 C 2.5 mm Volume mm 350 220 C 220 C 3 220 C Table 2. Pb-free Process - Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm - 2.5 mm 2.5 mm Volume mm <350 260 C 260 C 250 C 3 3 Volume mm 350-2000 260 C 250 C 245 C Volume mm >2000 260 C 245 C 245 C 3 Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 13 Description 5 Sec, 245C 1000 Hrs, Bias @ 125C 168 Hrs, 100%RH, 2atm, 121C 500 Cycles, -65C~150C www.anpec.com.tw APM4550K Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2009 14 www.anpec.com.tw