USA AVX Myrtle Beach, SC Corporate Offices AVX North Central, IN AVX Southwest, AZ AVX Southeast, GA Tel: 317-848-7153 FAX: 317-844-9314 Tel: 602-678-0384 FAX: 602-678-0385 Tel: 404-608-8151 FAX: 770-972-0766 AVX Mid/Pacific, CA AVX South Central, TX AVX Canada Tel: 510-661-4100 FAX: 510-661-4101 Tel: 972-669-1223 FAX: 972-669-2090 Tel: 905-238-3151 FAX: 905-238-0319 Tel: 843-448-9411 FAX: 843-448-1943 AVX Northwest, WA Tel: 360-699-8746 FAX: 360-699-8751 A KYOCERA GROUP COMPANY EUROPE AVX Limited, England European Headquarters Tel: ++44 (0) 1252-770000 FAX: ++44 (0) 1252-770001 AVX/ELCO, England Tel: ++44 (0) 1638-675000 FAX: ++44 (0) 1638-675002 AVX S.A., France AVX srl, Italy Tel: ++33 (1) 69-18-46-00 FAX: ++33 (1) 69-28-73-87 Tel: ++390 (0)2 614-571 FAX: ++390 (0)2 614-2576 AVX GmbH, Germany AVX Czech Republic Tel: ++49 (0) 8131-9004-0 FAX: ++49 (0) 8131-9004-44 Tel: ++420 465-358-111 FAX: ++420 465-323-010 ASIA-PACIFIC AVX/Kyocera, Singapore Asia-Pacific Headquarters Tel: (65) 6286-7555 FAX: (65) 6488-9880 AVX/Kyocera, Hong Kong Tel: (852) 2-363-3303 FAX: (852) 2-765-8185 AVX/Kyocera, Korea Tel: (82) 2-785-6504 FAX: (82) 2-784-5411 AVX/Kyocera, Taiwan Kyocera, Japan - KDP Tel: (886) 2-2698-8778 FAX: (886) 2-2698-8777 Tel: (81) 75-604-3424 FAX: (81) 75-604-3425 AVX/Kyocera, Malaysia AVX/Kyocera, Shanghai, China Tel: (60) 4-228-1190 FAX: (60) 4-228-1196 Tel: 86-21 6886 1000 FAX: 86-21 6886 1010 Elco, Japan AVX/Kyocera, Tianjin, China Tel: 045-943-2906/7 FAX: 045-943-2910 Tel: 86-22 2576 0098 FAX: 86-22 2576 0096 Kyocera, Japan - AVX Tel: (81) 75-604-3426 FAX: (81) 75-604-3425 Contact: AVX RF Microwave/Thin-Film Products A KYOCERA GROUP COMPANY http://www.avx.com S-RFMTF00M904-C AVX Microwave Ask The World Of Us As one of the world's broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology, Quality and Service, by establishing progressive design, manufacturing and continuous improvement programs driving toward a single goal: TOTAL CUSTOMER SATISFACTION 1 RF/Microwave Products Table of Contents Company Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thin-Film RF/Microwave Technology - Accu-F(R) / Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-24 Thin-Film Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thin-Film Chip Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thin-Film Chip Capacitors for RF Signal and Power Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Accu-F(R). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 0201 Typical Electrical Tables - Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 0402 Typical Electrical Tables - Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-13 0603 Typical Electrical Tables - Accu-F(R) / Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 0805 Typical Electrical Tables - Accu-F(R) / Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 1210 Typical Electrical Tables - Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 High Frequency Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-19 Environmental / Mechanical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Performance Characteristics RF Power Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Application Notes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23 Automatic Insertion Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Thin-Film RF/Microwave Inductor Technology - Accu-L(R) - L0603/L0805 . . . . . . . . . . . . . . . . . . 25-30 SMD High-Q RF Inductor - Accu-L(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26-29 Environmental Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Thin-Film RF/Microwave Directional Couplers - CP0402/CP0603/CP0805/DB0805 3dB 90 . . . . 31-67 CP0402 High Directivity LGA Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32-35 CP0603 High Directivity LGA Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36-40 CP0402 and CP0603 Test Jigs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 CP0603 SMD Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42-44 CP0603 SMD Type - High Directivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 CP0805 Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46-49 CP0805 and CP0603 Test Jigs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 DB0805 3dB 90 Couplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51-62 DB0805 3dB 90 Test Jigs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Thin-Film RF/Microwave Harmonic Low Pass Filter - LP0603/LP0805 . . . . . . . . . . . . . . . . . . . . 64-71 LP0603 Test Jigs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67-68 LP0805 Test Jigs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Thin-Film RF/Microwave Products - Designer Kits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72-74 RF/Microwave Multilayer Capacitors (MLC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75-89 Porcelain Capacitors (+9020ppm/C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76-79 * AQ06 (0.063" x 0.032") - Cap. Range: 0.1 to 120pF * AQ11; AQ12 (0.055" x 0.055") - Cap. Range: 0.1 to 100pF * AQ13; AQ14 (0.110" x 0.110") - Cap. Range: 0.1 to 1000pF Hi-Q NP0 Capacitors (030ppm/C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 * AQ06 (0.063" x 0.032") - Cap. Range: 0.1 to 120pF * AQ11; AQ12 (0.055" x 0.055") - Cap. Range: 0.1 to 1000pF * AQ13; AQ14 (0.110" x 0.110") - Cap. Range: 0.1 to 5100pF Hi-K RF Capacitors (15%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78-79 * AQ12 (0.055" x 0.055") - Cap. Range: 0.001 to 0.010F * AQ14 (0.110" x 0.110") - Cap. Range: 0.005 to 0.1F MIL-PRF-55681 "BG" Voltage Temperature Limits (+9020ppm/C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80-82 * CDR11BG; CDR12BG (0.055" x 0.055") - Failure Rate Level: M, P, R, S * CDR13BG; CDR14BG (0.110" x 0.110") - Failure Rate Level: M, P, R, S MIL-PRF-55681 "BP" Voltage Temperature Limits (030ppm/C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80-82 * CDR11BP; CDR12BP (0.055" x 0.055") - Failure Rate Level: M, P, R, S * CDR13BP; CDR14BP (0.110" x 0.110") - Failure Rate Level: M, P, R, S Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83-87 Automatic Insertion Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 Hi-Q (R) High RF Power MLC Surface Mount Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 RF/Microwave C0G (NP0) Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90-93 Ultra Low ESR "U" Series, C0G (NP0) 91-93 RF/Microwave AQ 12 & 14 and "U" Series Designer Kits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94-97 Introduction to Microwave Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98-110 * 0402 (0.040" x 0.020"), 0603 (0.060" x 0.030"), 0805 (0.080" x 0.050"), 1210 (0.125" x 0.100") . . . . . . . . . . . . . . . . . . 2 RF/Microwave Products Table of Contents Company Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thin-Film RF/Microwave Technology - Accu-F(R) / Accu-P(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-24 1 Thin-Film RF/Microwave Technology - Accu-L(R) L0603, L0805. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25-30 2 Thin-Film RF/Microwave Directional Couplers - CP0402/CP0603/CP0805/DB0805 3dB 90 . . . . 31-63 3 Thin-Film RF/Microwave Harmonic Low Pass Filter - LP0603/LP0805 . . . . . . . . . . . . . . . . . . . . . . . . . 64-71 4 Thin-Film RF/Microwave Products - Designer Kits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72-74 5 RF/Microwave Multilayer Capacitors (MLC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75-89 6 RF/Microwave C0G (NP0) Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90-93 7 RF/Microwave AQ 12 & 14 and "U" Series Designer Kits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94-97 8 Introduction to Microwave Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98-110 9 3 RF/Microwave Products Company Profile AVX Corporation is a leading manufacturer of multilayer ceramic, thin film, tantalum, and glass capacitors, as well as other passive electronic components. These products are used in virtually every variety of electronic system today, including data processing, telecommunications, consumer/automotive electronics, military and aerospace systems, and instrumentation and process controls. We continually strive to be the leader in all component segments we supply. RF/Microwave capacitors is a thrust business for us. AVX offers a broad line of RF/Microwave Chip Capacitors in a wide range of sizes, styles, and ratings. The Thin-Film Products range illustrated in this catalog represents the state-of-the-art in RF Capacitors, Inductors, Directional Couplers and Low Pass Filters. The thin-film technology provides components that exhibit excellent batch-to-batch repeatability of electrical parameters at RF frequencies. The Accu-F(R) and Accu-P(R) series of capacitors are available in ultratight tolerances (0.02pF) as well as non-standard capacitance values. The Accu-L(R) series of inductors are ideally suited for applications requiring an extremely high Q and high current capability. The CP0402/CP0603/CP0805 series of Directional Couplers cover the frequency range of 800 MHz to 6 GHz. They feature low insertion loss, high directivity and highly accurate coupling factors. The LP0805 series of Low Pass Filters provide a rugged component in a small 0805 size package with excellent high frequency performance. Another major series of microwave capacitors consists of both multilayer porcelain and ceramic capacitors for frequencies from 10 MHz to 4.2 GHz (AQ11 - 14 Series). Three sizes of specially designed ultra-low ESR C0G (NP0) capacitors are covered for RF applications ("U" Series). Ask the world of us. Call (843) 448-9411. Or visit our website http://www.avx.com 4 1 Thin-Film Technology (R) (R) Accu-F / Accu-P Thin-Film RF/Microwave Capacitors 5 Accu-F(R) / Accu-P(R) Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in resistive losses, but these often are of negligible effect on the circuit. At the very high frequencies of radio communication (>100MHz) and satellite systems (>1GHz), these effects become important. Recognizing that a real capacitor will exhibit inductive and resistive impedances in addition to capacitance, the ideal capacitor for these high frequencies is an ultra low loss component which can be fully characterized in all parameters with total repeatability from unit to unit. Until recently, most high frequency/microwave capacitors were based on fired-ceramic (porcelain) technology. Layers of ceramic dielectric material and metal alloy electrode paste are interleaved and then sintered in a high temperature oven. This technology exhibits component variability in dielectric quality (losses, dielectric constant and insulation resistance), variability in electrode conductivity and variability in physical size (affecting inductance). An alternate thin-film technology has been developed which virtually eliminates these variances. It is this technology which has been fully incorporated into Accu-F(R) and Accu-P(R) to provide high frequency capacitors exhibiting truly ideal characteristics. The main features of Accu-F(R) and Accu-P(R) may be summarized as follows: * High purity of electrodes for very low and repeatable ESR. * Highly pure, low-K dielectric for high breakdown field, high insulation resistance and low losses to frequencies above 40GHz. * Very tight dimensional control for uniform inductance, unit to unit. * Very tight capacitance tolerances for high frequency signal applications. This accuracy sets apart these Thin-Film capacitors from ceramic capacitors so that the term Accu has been employed as the designation for this series of devices, an abbreviation for "accurate." THIN-FILM TECHNOLOGY Thin-film technology is commonly used in producing semiconductor devices. In the last two decades, this technology has developed tremendously, both in performance and in process control. Today's techniques enable line definitions of below 1m, and the controlling of thickness of layers at 100A (10-2m). Applying this technology to the manufacture of capacitors has enabled the development of components where both electrical and physical properties can be tightly controlled. The thin-film production facilities at AVX consist of: * Class 1000 clean rooms, with working areas under laminar-flow hoods of class 100, (below 100 particles per cubic foot larger than 0.5m). * High vacuum metal deposition systems for high-purity electrode construction. * Photolithography equipment for line definition down to 2.0m accuracy. * Plasma-enhanced CVD for various dielectric depositions (CVD=Chemical Vapor Deposition). * High accuracy, microprocessor-controlled dicing saws for chip separation. * High speed, high accuracy sorting to ensure strict tolerance adherence. TERMINATION ALUMINA ELECTRODE SEAL ELECTRODE DIELECTRIC ALUMINA ACCU-P(R) CAPACITOR 6 Accu-F(R) / Accu-P(R) Thin-Film Chip Capacitors ACCU-F(R) TECHNOLOGY ACCU-P(R) TECHNOLOGY The use of very low-loss dielectric materials, silicon dioxide and silicon oxynitride, in conjunction with highly conductive electrode metals results in low ESR and high Q. These high-frequency characteristics change at a slower rate with increasing frequency than for ceramic microwave capacitors. Because of the thin-film technology, the above-mentioned frequency characteristics are obtained without significant compromise of properties required for surface mounting. The main Accu-F(R) properties are: * Internationally agreed sizes with excellent dimensional control. * Small size chip capacitors (0603) are available. * Tight capacitance tolerances. * Low ESR at VHF, UHF and microwave frequencies. * High stability with respect to time, temperature, frequency and voltage variation. * Nickel/solder-coated terminations to provide excellent solderability and leach resistance. As in the Accu-F(R) series the use of very low-loss dielectric materials (silicon dioxide and silicon oxynitride) in conjunction with highly conductive electrode metals results in low ESR and high Q. At high frequency these characteristics change at a slower rate with increasing frequency than conventional ceramic microwave capacitors. Using thin-film technology, the above-mentioned frequency characteristics are obtained without significant compromise of properties required for surface mounting. The use of high thermal conductivity materials results in excellent RF power handling capabilities. The main Accu-P(R) properties are: * Enhanced RF power handling capability. * Improved mechanical characteristics. * Internationally agreed sizes with excellent dimensional control. * Ultra Small size chip capacitors (0201) are available. * Tight capacitance tolerances. * Low ESR at UHF, VHF, and microwave frequencies. * High-stability with respect to time, temperature, frequency and voltage variation. * High temperature nickel/solder-coated terminations as standard to provide excellent solderability and leach resistance. ACCU-F(R) FEATURES Accu-F(R) meets the fast-growing demand for low-loss (high-Q) capacitors for use in surface mount technology especially for the mobile communications market, such as cellular radio of 450 and 900 MHz, UHF walkie-talkies, UHF cordless telephones to 2.3 GHz, low noise blocks at 11-12.5 GHz and for other VHF, UHF and microwave applications. Accu-F(R) is currently unique in its ability to offer very low capacitance values (0.1pF) and very tight capacitance tolerances (0.05pF). Typically Accu-F(R) will be used in small signal applications in VCO's, matching networks, filters, etc. Inspection test and quality control procedures in accordance with ISO 9001, CECC, IECQ and USA MIL Standards yield products of the highest quality. APPLICATIONS Cellular Communications CT2/PCN (Cordless Telephone/Personal Comm. Networks) Satellite TV Cable TV GPS (Global Positioning Systems) Vehicle Location Systems Vehicle Alarm Systems Paging Military Communications Radar Systems Video Switching Test & Measurements Filters VCO's Matching Networks APPROVALS ISO 9001 ACCU-P(R) FEATURES * Minimal batch to batch variability of parameters at high frequency. * The Accu-P(R) has the same unique features as the Accu-F(R) capacitor such as low ESR, high Q, availability of very low capacitance values and very tight capacitance tolerances. * The RF power handling capability of the Accu-P(R) allows for its usage in both small signal and RF power applications. * Inspection, test and quality control procedures in accordance with ISO 9001, CECC, IECQ and USA MIL Standards guarantee product of the highest quality. * Hand soldering Accu-P(R): Due to their construction utilizing relatively high thermal conductivity materials, Accu-P's have become the preferred device in R & D labs and production environments where hand soldering is used. Accu-P's are available in all sizes and are electrically identical to their Accu-F counterparts. APPLICATIONS Cellular Communications CT2/PCN (Cordless Telephone/Personal Comm. Networks) Satellite TV Cable TV GPS (Global Positioning Systems) Vehicle Location Systems Vehicle Alarm Systems Paging Military Communications Radar Systems Video Switching Test & Measurements Filters VCO's Matching Networks RF Amplifiers APPROVALS ISO 9001 7 1 Accu-F(R) */ Accu-P(R) Thin-Film Chip Capacitors for RF Signal and Power Applications B1 W T B2 1 ACCU-P(R) (Signal and Power Type Capacitors) L 0201 ACCU-F(R) *(Signal Type Capacitors) L W T B 0603 0805 1.600.1 (0.0630.004) 0.810.1 (0.0320.004) 0.630.1 (0.0250.004) 0.300.1 (0.0120.004) 2.010.1 (0.0790.004) 1.270.1 (0.0500.004) 0.630.1 (0.0250.004) 0.300.1 (0.0120.004) recommended for new designs. *Not Accu-P's are recommended. 0402* 0603* 0.600.05 1.000.1 1.600.1 L (0.0230.002) (0.0390.004) (0.0630.004) 0.3250.050 0.550.07 0.810.1 W (0.01280.002) (0.0220.003) (0.0320.004) 0.2250.050 0.400.1 0.630.1 T (0.0090.002) (0.0160.004) (0.0250.004) 0.100.10 0.000.1/-0 0.350.15 B1 (0.0040.004) (0.0000.004/-0) (0.0140.006) 0.150.05 0.200.1 0.350.15 B2 (0.0060.002) (0.0080.004) (0.0140.006) DIMENSIONS: millimeters (inches) 0805* 1210 2.010.1 (0.0790.004) 1.270.1 (0.0500.004) 0.930.2 (0.0360.008) 0.300.1 (0.0120.004) 0.300.1 (0.0120.004) 3.020.1 (0.1190.004) 2.50.1 (0.1000.004) 0.930.2 (0.0360.008) 0.430.1 (0.0170.004) 0.430.1 (0.0170.004) DIMENSIONS: millimeters (inches) *Mount Black Side Up HOW TO ORDER 0805 5 J 120 Size Voltage 1 = 100V 5 = 50V 3 = 25V Y = 16V Z = 10V Temperature Coefficient (1) Capacitance 0201* 0402* 0603 0805 1210* * Accu-P ONLY (1) G Capacitance J = 030ppm/C expressed in pF. (-55C to (2 significant +125C) digits + number K = 060ppm/C of zeros) (-55C to for values +125C) <10pF, letter R denotes decimal point. Example: 68pF = 680 8.2pF = 8R2 TC's shown are per EIA/IEC Specifications. A Tolerance Specification for Code C2.0pF* A = Accu-F(R) P = 0.02pF Q = 0.03pF A = 0.05pF B = 0.1pF C = 0.25pF technology B = Accu-P(R) technology for C3.0pF Q = 0.03pF A = 0.05pF B = 0.1pF C = 0.25pF for C5.6pF W TR Termination Code Packaging Code W = Nickel/ TR = Tape and Reel Solder Coated Accu-F(R) Sn63, Pb37 Accu-P(R) 0201 & 0402 Sn90, Pb10 T = Nickel/High Temperature Solder Coated Accu-P(R) 0603, 0805, 1210 Sn96, Ag4 S = Nickel/Lead Free Solder Coated Accu-P(R) 0402 Sn100 A = 0.05pF B = 0.1pF C = 0.25pF for 5.6pF 0 into the interior of a unit circle. The Smith Chart is a mapping of the reflection coefficient, S11, of an impedance. S11 = (Z- ZO) / (Z + ZO). ZO is a reference impedance, typically 50 ohms, and is in the center of the chart. The central horizontal axis is for X = O, with R < 50 to the left of center, and R > 50 to the right of center. 1 ___ CP RS QP2 Figure 9. SLC Impedance Magnitude vs. Frequency SERIES RESONANCE j50 j100 j25 j150 j10 0 j250 10 25 50 PARALLEL RESONANCE 100 150 250 500 -j10 -j250 -j150 -j100 -j25 -j50 COORDINATES IN OHMS FREQUENCY IN GHz Figure 10. SLC Impedance on Smith Chart Because there is always some parasitic inductance associated with capacitors, there will be a frequency at which the inductive reactance will equal that of the capacitor. This is known as the series resonant frequency (SRF). At the SRF, the capacitor will appear as a small resistor (RS). The transmission loss through a series mounted capacitor at its series resonant frequency will be low. At frequencies above the SRF, the capacitor begins to act like an inductor. When used as a DC block, the capacitor will begin to exhibit gradually higher insertion loss above the SRF. In other words, the capacitor will cause a high frequency rolloff of its transmission amplitude response. When used as an RF bypass, as for the source of an FET, the inductance will cause the FET to become unstable which can cause oscillations or undesirable effects on the gain response of the FET amplifier. Beyond the SRF, there is a frequency called the parallel resonant frequency (PRF). This occurs when the reactance of the series inductor equals that of the parallel capacitor. 103 9 Introduction to Microwave Capacitors Electrical Model At this parallel resonant frequency, the capacitor will appear as a large resister whose value is RPRF defined as: Eq. 9. RPRF = Rs x QP X QP; where, QP = 1/RS WP/CP WP = 2fPRF The parasitic parallel capacitance is usually very small which results in a parallel resonant frequency that is much higher than the series resonance. For capacitor usage in RF impedance matching and tuning applications, the maximum practical frequency for use is up to 0.5 times the SRF. For DC filtering and RF shorting applications, best performance is obtained near the SRF. At frequencies above the SRF, but below the PRF, the SLC can be used as a low loss inductor with a built-in DC block for bypassing and decoupling. The series resonant frequency (SRF) of an SLC can be measured by mounting the capacitor in series on a 50 ohm transmission line as shown in Figure 11. CHIP CAPACITOR 50 ohm LINE 50 ohm LINE Figure 11 At its series resonant frequency (SRF), the SLC will appear as a small resistance. This measurement can be performed with a vector network analyzer such as the Hewlett Packard 8510. The SRF is at the frequency for which the phase of the input reflection coefficient, S11, is crossing the real axis on the Smith Chart at 180 degrees. The resonant frequency will be lowered by the inductance associated with the bonding attachment to the capacitor (i.e., bonding wires, ribbons, leads, etc.). The actual resonant frequency of the capacitor by itself can be determined by taking out the effects of the bonding attachment inductance. Using the low frequency measurements of the primary capacitance alone, the inductance of the capacitor can be derived from the resonant frequency. With AVX SLC's, the inductance is low enough so that the practical operating frequencies achieved can be beyond 20 GHz. 9 104 Equivalent Series Resistance The equivalent series resistance is the RS in the electrical model. At the SRF, the ESR can be readily determined on the Smith Chart display of the capacitor's impedance. However, the ESR is not necessarily constant with frequency and its value is typically determined by an insertion loss measurement of the capacitor at the desired frequency. The insertion loss is a combination of reflective and absorptive components. The absorptive component is the part associated with the value of the ESR (i.e., the loss in RS). Because of the low values of ESR in microwave capacitors (on the order of 0.01 ohm), the insertion loss measurement is very difficult to make, but can be made with a test fixture similar to that shown in Figure 11, but with the input and output 50 ohm impedances transformed down to some more convenient impedance level, Rref, to obtain a more accurate measurement. When used as a DC block in the transmission line test fixture, the forward transmission coefficient, S21, and the input reflection coefficient, S11, can be measured to determine: Eq. 10. Dissipative Loss. DL=(1-:S11:^2)/(:S21:^2) Eq. 11. Reflection Loss. RL=(1-:S11:^2) where S11 and S21 are expressed as complex phasors. From the dissipative loss, DL, the ESR can be determined as: Eq. 12. ESR = Rref * [1 - SQRT(DL)]/[1 + SQRT(DL)] The ESR typically increases with operating temperature and self-heating under high power. This increase can be seen directly in the lab by measuring the insertion loss of the capacitor as a function of temperature. A low ESR is especially necessary in SLC's when used in series with transistors in low noise amplifiers, high gain amplifiers, or high power amplifiers. For example, an ESR of 1 ohm in series with a base input impedance of 1 ohm would result in a serious compromise in ampIifier gain and noise figure by up to 3 dB. Power Rating The RF power rating of chip capacitors is dependent on: * Thermal Breakdown * Voltage Breakdown Thermal Breakdown Thermal breakdown is self-heating caused by RF power dissipated in the capacitor. If the resultant heat generated is greater than what can be conducted away through the leads or other means of heat sinking, the capacitor temperature will rise. Introduction to Microwave Capacitors Electrical Model As the capacitor temperature increases, the dissipation factor and ESR of the capacitor also increase which creates a thermal runaway situation. The small signal insertion loss is used to determine the percentage of power which is dissipated in the capacitor. For instance, if the insertion loss is: 0.01 dB then .2% of the incident power is lost as heat 0.10 dB then 2% of the incident power is lost as heat 1.00 dB then 20% of the incident power is lost as heat The capacitor will heat up according to the amount of power dissipated in the capacitor and the heat sinking provided. Even very low ESR, 0.01 ohm at 1 GHz, can be significant when passing power through a series mounted capacitor into a typically low impedance bipolar transistor base input with an input impedance of only 1 ohm. If 1% of 10 watts is dissipated in the capacitor, this 100 milliwatt of power causes a very large increase in the capacitor temperature dependent on its heat sinking in the MIC circuit. Voltage Breakdown The voltage breakdown also limits the maximum power handling capability of the capacitor. The voltage breakdown properties of the capacitors is dependent on the following: * dielectric material * voids in the material * form factor * separation of the electrodes Most microwave capacitors have a DC voltage rating of 50 VDC. This is much greater than typical DC voltages of 3 to 15 volts present on an MIC circuit. Dielectric Constant Measurement at Microwave Frequencies The measurement of dielectric constants at low frequencies is easily done by measuring the capacitance of a substrate of known dimensions and calculating the dielectric constant. The resonance method is used in measuring dielectric constants at microwave frequencies of metallized ceramic substrates. This is based on the model of the high dielectric constant substrate as a parallel plate dielectrically loaded waveguide resonator. By observing the resonant frequencies and knowing the dimensions of the substrate, the dielectric constant is calculated by fitting the resonances into a table of expected fundamental and higher order modes. This method can be measured by connecting the corners of the substrates to the center conductors of either an APC-7 or Type N connector. The test setup is the same as for insertion loss measurements. This method as described in the literature for an alumina substrate with a dielectric constant of approximately 10 and a substrate height of 0.025 inches can be measured to an accuracy of 2%. The Napoli-Hughes Method uses an open circuit assumption for the unmetallized edges which can be radiative. This inaccuracy is reduced if thinner substrates or if higher dielectric constant substrates are used which will tend to reduce radiation. Higher accuracy can be achieved by metallizing all six sides of the substrate except for the corners where the RF is coupled to the substrate. This method as reported by Howell provided more consistent results. m=2 2L ___ f W 0 2f0 L ___ f W 0 m=1 f0 m = 0 FROM AUTO SWEEP GENERATOR TESTER n=1 2 3 DETECTOR SCALAR ANALYZER 4 Figure 12 Figure 13 Dispersion Curve of a Rectangular Resonator Test Configuration for Resonance Measurements 9 105 Introduction to Microwave Capacitors Transmission Lines Propagation Constant and Characteristic Impedance Standing Waves The incident waves of voltage and current decrease in magnitude and vary in phase as one goes toward the receiving end of the transmission line which has losses. The propagation constant is a measure of the phase shift and attenuation along the line. * attenuation per unit length of line is called the attenuation constant. (dB or nepers per unit length) * phase constant, phase shift per unit length. (radians per unit length) * angular frequency, 2 * pi * f (R+jwL) - complex series impedance per unit length of line. (G+jwC) - complex shunt admittance per unit length of line. Eq. 13. Z0 for lossless case: Z0 = LC WAVE CIRCUIT X D E1 2E1 1 3 10 2 Ei 2 3 RESULTANT (a) Standing waves on the lossless transmission line: An incident wave will not be reflected if the transmission line is terminated in either matched load or if the transmission line is infinitely long. Otherwise, reflected waves will be present. In other words, any impedance will cause reflections. Let us consider the case of a lossless transmission line terminated in a short line. In this case all of the incident wave will be reflected. See Figure 15. The dotted sine wave to the right of the short circuit in the diagram indicates the position and distance the wave would have traveled in the absence of the short circuit. With the short circuit placed at X, the wave travels the same distance back toward the generator. In order to satisfy the boundary conditions, the voltage at the short circuit must be zero at all times. This is accomplished by a reflected wave which is equal in magnitude and reversed in polarity (shown by the superimposed reflected wave and the resultant total voltage on the line). Note that the total voltage is twice the amplitude of the incident voltage at a quarter wavelength back toward the generator and the total voltage is zero at one-half wavelength from the short. DISTRIBUTED PARAMETER MODEL OF A SECTION OF TRANSMISSION LINES: 1 SHORT E1 11 rx 6 3 2 5 lx gx 2 4 4 3 cx 1 Er (b) RESULTANT SHORT 3 12 x 2 4 where G = Conductance per unit length R = Resistance per unit length C = Capacitance per unit length L = Inductance per unit length X = Incremental length 2 4 3 2Ei (c) 7 1 7 6 5 4 3 2 2 3 4 5 6 6 5 4 3 2 1 7 SHORT 1 Figure 15 2 3 4 5 6 PURE TRAVELING WAVE V + 1 I 7 (d) (e) Figure 14 9 This figure shows generation of standing waves on a shorted transmission line. Dotted lines to the right of the short circuit represent the distance the wave would have traveled in absence of the short. Dotted vectors represent the reflected wave. The heavy solid line represents the vector sum of the incident and refected waves. (d) and (e) represent instantaneous voltages and currents at different intervals of time. 106 AMPLITUDE X DISTANCE ALONG LINE V = Instantaneous voltage I = Instantaneous current Pure traveling waves: V & I in the lossless case are in phase. V & I also reverse polarity every half wavelength. Figure 16 Introduction to Microwave Capacitors Transmission Lines Open Circuit: FIELD ORIENTATION OF A COAXIAL LINE E I H V* DIRECTION OF PROPAGATION Figure 17 At a distance of one-quarter wavelength from the short, the voltage is found to be twice the amplitude of the incident voltage, which is equivalent to an open circuit. Therefore, this same distribution would be obtained if an open circuit were placed a quarter wavelength from the short. In the case the first node is located a quarter wavelength from the open and the first antinode is right as the open. The node-to-node spacing remains half wavelength as is the antinode-to-antinode spacing. Voltage Standing Wave Ratio: TWO WIRE RECTANGULAR WAVEGUIDE MICROSTRIP COAXIAL RIDGED WAVEGUIDE CIRCULAR WAVEGUIDE CROSS SECTIONAL CONFIGURATIONS OF VARIOUS TYPES OF GUIDING STRUCTURES Figure 18 The total voltage pattern is called a standing wave. Standing waves exist as the result of two waves of the same frequency traveling in opposite directions on a transmission line. The total voltage at any instant has a sine wave distribution along the line with zero voltage at the short and zero points at half wave intervals from the short circuit. The points of zero voltages are called voltage nodes and the points of maximum voltage halfway between these nodes are called antinodes. The voltage standing wave ratio is defined as the ratio of the maximum voltage to the minimum voltage on a transmission line. This ratio is most frequently referred to as VSWR (Viswar). E + Er 1 + Rho Emax = i = Eq. 14. VSWR = Emin Ei - Er 1 - Rho where Rho = reflective coefficient If the transmission line is terminated in a short or open circuit, the reflected voltage, E r, is equal to the incident voltage, E i. From the above equation the reflection coefficient is 1.0, and the VSWR is infinite. If a matched termination is connected to the line, the reflected wave is zero, the reflection coefficient is zero, and the VSWR is zero. 9 107 Introduction to Microwave Capacitors Incorporation of Capacitors into Microwave Integrated Circuit Hybrids A Microwave Integrated Circuit Hybrid (MIC) is a microwave circuit that uses integrated circuit production techniques involving such factors as thin or thick films, substrates, dielectrics, conductors, resistors, and microstrip lines, to build passive assemblies on a dielectric. Active elements such as microwave diodes and transistors are usually added after photo resist, masking, etching, and deposition processes have been completed. MICs usually are enclosed as shielded microstrip to prevent electromagnetic interference with other components or systems. This section will discuss some of the important characteristics of MICs, such as: * MIC substrates * MIC metallization * MIC components MIC Substrates: Microstrip employs circuitry that is large compared to the wavelength of the frequency used with the circuit. For this reason, the etched metal patterns often are distributed circuits with transmission lines etched directly onto the MIC substrate. Figure 19 shows the pertinent dimensional parameters for a microstrip transmission line. For the current discussion we are most interested in the higher microwave frequencies. The MIC circuit design requires a uniform and predictable substrate characteristic. Several types of substrates in common usage are: alumina, sapphire, quartz, and beryllium oxide. Key requirements for a MIC substrate are that it have: * Low dielectric loss * Uniform dielectric constant * Smooth finish * Low expansion coefficient STRIP CONDUCTOR W h DIELECTRIC * Dielectric Constant: Increase of the dielectric constant of the substrate will decrease the ZO of the microstrip line. Table II shows a brief listing of substrate properties. Table II Material Relative Dielectric Constant, Er Loss Tangent at 10 GHz Thermal Conductivity K, in W/CM/ Deg. C Alumina Sapphire Quartz Beryllium Oxide 9.8* 11.7 3.8 6.6 0.0001 0.0001 0.0001 0.0001 0.3 0.4 0.01 2.5 *Alumina Er depends on vendor and purity. The dependence of ZO to the above parameters is as shown: Eq. 15. ZO(f) = 377 * H/(W)/Sqrt (Er) where, H = height of the substrate W = width of the microstrip conductor Er = dielectric constant of the substrate A graph of ZO versus W/H for several values of dielectric constants is shown below: 1000 Z0 - MICROSTRIP IMPEDANCE () Microwave Integrated Circuit Hybrids 500 400 300 200 2.3 2.55 100 4.8 6.8 50 40 10 30 20 10 5 4 3 2 GROUND PLANE 9 1 .1 .2 .3 .4 .5 1 2 3 4 5 7.5 10 Figure 19. MIC Microstrip Outline MICROSTRIP W/H The characteristic impedance of the microstrip line is dependent primarily on the following: * Width of the conductor: Increase in the width "W" of the conductor will decrease the ZO of the microstrip line. * Height of the substrate: Increase in the height "H" of the substrate will increase the ZO of the microstrip line. Figure 20 108 20 30 40 50 100 The most popular substrate material is alumina which has a dielectric constant of between 9.6 and 10.0 depending on the vendor and the purity. Other substrates are used where the specified unique properties of the material (beryllia for high power, ferrites for magnetic properties) are demanded by design. Introduction to Microwave Capacitors Incorporation of Capacitors into Microwave Integrated Circuit Hybrids MIC Metallization: Capacitors: MIC metallization is a thin film of two or more layers of metals. A base metallization layer is deposited onto the substrate, another layer may be optionally deposited on top of this, and then a final gold layer is deposited onto the surface. The base metallization is chosen for its adhesion to the substrate and for compatibility with the next layer. The base metallization is usually lossy at microwave frequencies. The losses due to this metallization can be kept to a minimum if its thickness does not exceed one "skin depth" of the metal. Skin effect defines a phenomenon at microwave frequencies where the current travelling along a conductor does not penetrate the conductor but remains on the surface of the conductor. The "skin depth" indicates how far the microwave current will penetrate into the metal. The "skin depth" is smaller as the frequency increases. By keeping the lossy metallization as thin as possible, more of the microwave current will propagate in the top metallization gold layer and loss is minimized. Typical metallization schemes used in the industry are: * Chromium-Gold: Cr-Au * Nichrome-Gold: NiCr-Au * Chromium-Copper-Gold: Cr-Cu-Au * Titanium-Tungsten-Gold: TiW-Au * Others A lumped capacitor can be realized by the parallel gap capacitance of an area of metallization on the top of the substrate to the ground plane. Values of capacitance that can be obtained by this method are usually less than a few picofarads. At microwave frequencies if the capacitor size in any one dimension begins to approach a quarter-wavelength, a resonance will occur. Large values of capacitance can be achieved with a dielectric constant between the capacitor plates while maintaining the small size required for MIC circuits. Chip capacitors can be fabricated on substrate with a dielectric constant up to 5000. This higher dielectric constant allows a much smaller size capacitor for a given capacitance value which is a very desirable feature both from the real estate aspect and the self-resonance aspect. MIC Components: Microstrip has advantages over other microwave circuit topologies in that active semiconductors and passive components can easily be incorporated to make active hybrid circuits. It is possible to mix high and low frequency circuitry to attain a "system-on-a substrate." Passive Components: On MIC circuits, the passive components are either distributed or lumped elements. The distributed components are usually realized by etched patterns on the substrate metallization. The lumped components are capacitors, resistors, and inductors; and whenever possible components are derived by etching them directly on the MlC metallization thin film. Chip components are used when they offer advantages such as: * Component values are beyond that realizable by thin film techniques on the MIC substrates, * Smaller size is required, * High power capability is required. Capacitors, resistors, and inductors are discussed in the following: Resistors: MIC resistors are often realized by using a resistive base layer on the MIC substrate metallization, and by etching the proper pattern to expose the resistive layer in the MIC circuitry. The exact value of the resistor is determined by: * resistivity of the resistive base layer, and * length and width of the resistor. Thin film resistive base layers are usually the following: * tantalum nitrite, or * nickel-chrome (nichrome). When chip resistors are used, they are mounted and connected in the same way as the chip capacitors. Inductors: Inductors are often realized by using narrow etched microstrip lines which provides inductance on the order of 1 to 5 nanohenrys. Higher values up to 50 nanohenrys are obtained by etching a round or square spiral onto the MIC metallization. Even higher values can be obtained by using wound wire inductors or chip inductors which are wire coils encased in a ceramic. Both types of discrete inductors are attached to the circuit by the same means as the capacitors. 9 109 Introduction to Microwave Capacitors Incorporation of Capacitors into Microwave Integrated Circuit Hybrids Active components: The active devices in the MIC circuit can be made of entirely different materials than the substrates and are usually attached to the substrates by eutectic soldering or conductive epoxy. Typical active devices on MIC circuits are the following: * GaAs FETs * Bipolar Transistors * Schottky Barrier Diodes * PIN Diodes * Various other Semiconductors The active devices can be either in: * a plastic or ceramic package with metal leads, or * chip form. The packaged devices are commonly used at a lower frequency range than the chip devices since they exhibit more parasitic circuit elements that limit their performance at higher frequency. The advantages of packaged devices are protection of the devices during transport and mounting, ease of characterization, and ease of mounting onto the MIC circuit. Chip Component Attach: The methods of attachment of the chip components to the substrate are usually by: * eutectic solder die attach, and * epoxy die attach. 1. Eutectic Die Attach The eutectic die attach method can be used with several alloys. Eutectic defines the exact alloy combination at which the solidus to liquidus transition takes place at one particular 9 110 temperature. Other combinations have transition states with wider temperature ranges. For instance, the eutectic temperature for the following alloys are: Table III Alloy Gold Germanium Gold Tin Eutectic Composition Eutectic Temperature 88% Au 12% Ge 80% Au 20% Sn 356C 280C For best results, the eutectic attach is performed under an inert gas atmosphere, typically nitrogen, to reduce oxidation at high temperatures. The eutectic must be selected so that the die attach operations will not interfere with prior soldering operations and itself will not be disturbed by subsequent process steps. The metallization should be able to undergo 400C without any blistering or other adhesion degradation. 2. Epoxy Die Attach The epoxy die attach method uses silver or gold conductive particles in an epoxy. The epoxy for chip attach on MIC circuits is a one-part type which cures at temperatures of from 125C to 200C. The curing time is a function of temperature. A cure time of 30 minutes at 150C is a good compromise for high reliability and a reasonable cure time. Chip Components Interconnection: The chip components are interconnected to the MIC circuit by means of: * wire bonding, and * miniature parallel gap welding. 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Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee, warranty, or responsibility of any kind, expressed or implied. Statements or suggestions concerning possible use of our products are made without representation or warranty that any such use is free of patent infringement and are not recommendations to infringe any patent. The user should not assume that all safety measures are indicated or that other measures may not be required. Specifications are typical and may not apply to all applications. 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