18465
OCTOBER 2015
http://www.fujielectric.com/products/semiconductor/
FMW35N60S1HF FUJI POWER MOSFET
Super J-MOS series N-Channel enhancement mode power MOSFET
Features
Pb-free lead terminal
RoHS compliant
uses Halogen-free molding compound
Applications
For switching
Outline Drawings [mm]
Equivalent circuit schematic
①
Gate
②Drain
③Source
①②③
CONNECTION
①GATE
②DRAIN
③SOURCE
DIMENSIONSAREINMILLIMETERS.
① ② ③
① ② ③
TO-247
Absolute Maximum Ratings at TC=25°C (unless otherwise specied)
Parameter Symbol Characteristics Unit Remarks
Drain-Source Voltage VDS 600 V
VDSX 600 V VGS=-30V
Continuous Drain Current ID
±35 A Tc=25°C Note*1
±22 A Tc=100°C Note*1
Pulsed Drain Current IDP ±105 A Note *1
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive
Maximum Avalanche Current IAR 6.6 A Note *2
Non-Repetitive
Maximum Avalanche Energy EAS 1239.6 mJ Note *3
Maximum Drain-Source dV/dt dVDS /dt 50 kV/μs VDS≤ 600V
Peak Diode Recovery dV/dt dV/dt 15 kV/μs Note *4
Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5
Maximum Power Dissipation PD
2.5 WTa=25°C
270 TC=25°C
Operating and Storage Temperature range Tch 150 °C
Tstg -55 to +150 °C
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=4A, L=142mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDS peak≤600V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDS peak≤600V, Tch≤150°C.
Electrical Characteristics at TC=25°C (unless otherwise specied)
• Static Ratings
Parameter Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS ID=250μA
VGS=0V 600 - - V
Gate Threshold Voltage VGS(th) ID=250μA
VDS=VGS 2.5 3.0 3.5 V
Zero Gate Voltage Drain Current IDSS
VDS=600V
VGS=0V Tch=25°C - - 25
μA
VDS=480V
VGS=0V Tch=125°C - - 250
Gate-Source Leakage Current IGSS VGS= ± 30V
VDS=0V - 10 100 nA
Drain-Source On-State Resistance RDS(on) ID=17.5A
VGS=10V - 0.084 0.099 Ω
Gate resistance RGf=1MHz, open drain - 1.1 - Ω
2
FMW35N60S1HF
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3
FUJI POWER MOSFET
• Dynamic Ratings
Parameter Symbol Conditions min. typ. max. Unit
Forward Transconductance gfs ID=17.5A
VDS=25V 14.5 29 - S
Input Capacitance Ciss VDS=10V
VGS=0V
f=1MHz
- 2850 -
pF
Output Capacitance Coss - 5960 -
Reverse Transfer Capacitance Crss - 550 -
Effective output capacitance,
energy related (Note *6) Co(er) VGS=0V
VDS=0…480V - 160 -
Effective output capacitance,
time related (Note *7) Co(tr)
VGS=0V
VDS=0…480V
ID=constant
- 560 -
Turn-On Time td(on)
VDD=400V, VGS=10V
ID=17.5A, RG=18Ω
See Fig.3 and Fig.4
- 92 -
ns
tr- 23 -
Turn-Off Time td(off) - 182 -
tf- 18 -
Total Gate Charge QG
VDD=480V, ID=35A
VGS=10V
See Fig.5
- 87 -
nC
Gate-Source Charge QGS - 21 -
Gate-Drain Charge QGD - 33 -
Drain-Source crossover Charge QSW - 12 -
• Reverse Diode
Parameter Symbol Conditions min. typ. max. Unit
Avalanche Capability IAV L=31.6mH, Tch=25°C
See Fig.1 and Fig.2 6.6 - - A
Diode Forward On-Voltage VSD IF=35A, VGS=0V
Tch=25°C - 1 1.35 V
Reverse Recovery Time trr
IF=35A, VDD=400V
-di/dt=100A/μs
Tch=25°C
See Fig.6 and Fig.7
470 - ns
Reverse Recovery Charge Qrr - 9.2 - μC
Peak Reverse Recovery Current Irp - 39 - A
Thermal Resistance
Parameter Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) - - 0.46 °C/W
Channel to Ambient Rth(ch-a) - - 50 °C/W
Note *6 : Co(er) is a xed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note *7 : Co(tr) is a xed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
2
3
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW35N60S1HF
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Dissipation
P
D
=f(Tc)
P
D
[W]
T
C
[°C]
0 5 10 15 20 25
0
10
20
30
40
50
60
70
80
90
100
110
7.5V
6.5V
8V
20V
10V
7V
I
D
[A]
VDS [V]
Typical Output Characteristics
I
D
=f(V
DS
): 80µs pulse test, T
ch
=25°C
V
GS
=6V
0 5 10 15 20 25
0
10
20
30
40
50
60
70
6V
7.5V
7V
8V
20V
10V
6.5V
I
D
[A]
VDS [V]
Typical Output Characteristics
I
D
=f(V
DS
): 80µs pulse test, T
ch
=150°C
V
GS
=5.5V
0 10 20 30 40 50 60 70 80 90 100 110
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10V
7.5V
6.5V
6V 7V
R
DS(on)
[Ω]
I
D
[A]
Typical Drain-Source on-state Resistance
R
DS(on)
=f(I
D
): 80µs pulse test, T
ch
=25°C
8V
V
GS
=20V
0 10 20 30 40 50 60 70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 5.5V
6.5V
7V
8V
7.5V
6V
R
DS(on)
[Ω]
I
D
[A]
Typical Drain-Source on-state Resistance
R
DS(on)
=f(I
D
): 80µs pulse test, T
ch
=150°C
10V
V
GS
=20V
0.1 1 10 100 1000
0.01
0.1
1
10
100
t
PD
Power loss waveform :
Square waveform
t
PD
t
PD
Power loss waveform :
Square waveform
I
D
[A]
V
DS
[V]
Safe Operating Area
ID=f(VDS): Duty=0(Single pulse), Tc=25°C
t=
1µs
10µs
1ms
100µs
4
FMW35N60S1HF
http://www.fujielectric.com/products/semiconductor/
5
FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
Gate Threshold Voltage vs. Tch
V
GS(th)
=f(Tch): V
DS
=V
GS
, I
D
=250µA
V
GS(th)
[V]
T
ch
[°C]
-50 -25 0 25 50 75 100 125 150
500
520
540
560
580
600
620
640
660
680
700
This curve is not a guaranteed performance and is a reference value.
B
VDSS
[V]
T
ch
[°C]
Drain-Source Breakdown Voltage
B
VDSS
=f(T
ch
): I
D
=10mA, V
GS
=0V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
R
DS(on)
[Ω]
T
ch
[°C]
typ.
max.
Drain-Source On-state Resistance
R
DS(on)
=f(T
ch
): I
D
=17.5A, V
GS
=10V
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
100
T
ch
=25℃
150℃
I
D
[A]
V
GS
[V]
Typical Transfer Characteristic
I
D
=f(V
GS
): 80µs pulse test, V
DS
=25V
0.1 1 10 100
0.1
1
10
100
150℃
T
ch
=25℃
g
fs
[S]
I
D
[A]
Typical Transconductance
g
fs
=f(I
D
): 80µs pulse test, V
DS
=25V
0.0 0.5 1.0 1.5 2.0
0.1
1
10
100
T
ch
=25℃
150℃
I
F
[A]
V
SD
[V]
Typical Forward Characteristics of Reverse Diode
I
F
=f(V
SD
): 80µs pulse test
4
5
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW35N60S1HF
0.1 1 10 100
1
10
100
1000
10000
100000
C [pF]
V
DS
[V]
I
D
[A]
Typical Capacitance
C=f(V
DS
): V
GS
=0V, f=1MHz
Crss
Coss
Ciss
0 100 200 300 400 500 600
0
5
10
15
20
25
Typical Coss stored energy
Eoss [uJ]
V
DS
[V]
0.1 1 10 100
10
100
1000
10000
Typical Switching Characteristics vs. ID T
ch
=25°C
t=f(ID): Vdd=400V, V
GS
=10V/0V, R
G
=18Ω
td(on)
tr
tf
td(off)
t [ns]
0 20 40 60 80
0
2
4
6
8
10
300V
120V
Typical Gate Charge Characteristics
V
GS
=f(Q
g
): I
D
=35A, T
ch
=25°C
Q
g
[nC]
Vdd=480V
V
GS
[V]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Z
th(ch-c)
=f(t):D=0
Z
th(ch-c)
[℃/W]
t [sec]
0 25 50 75 100 125 150
0
500
1000
1500
2000
2500
3000
IAS=6.6A
IAS=4A
IAS=2A
E
AV
[mJ]
starting T
ch
[°C]
Maximum Avalanche Energy vs. starting T
ch
E
(AV)
=f(starting T
ch
): Vcc=60V, I
(AV)
<=6.6A
6
FMW35N60S1HF
http://www.fujielectric.com/products/semiconductor/
7
FUJI POWER MOSFET
Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test
Fig.3 Switching Test circuit Fig.4 Operating waveform of Switching Test
Fig.5 Operating waveform of Gate charge Test
Fig.7 Operating waveform of Reverse recovery Test
VGS
VDS
QG
QGS QGD
VGS,VDS
Qg
QSW
10V
IAV
BVDSS
VDS
ID
VGS
0
+10V
-15V
Rg
L
D.U.T.
VDD
Fig.6 Reverse recovery Test circuit
VGS
VDS
VDS × 90%
td(on) tr td(off) tf
VGS × 10%
VGS × 90%
VDS × 10%
VDS × 90%
VDS × 10%
Diode
L
VDD
RG
PG
D.U.T
Same as
D.U.T.
IF
trr
Irp
Irp× 10%
VDS peak
VDS
L
VDD
RG
PG
D.U.T.
trr
Qrr=∫ ir・dt
0
6
7
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW35N60S1HF
P2
Manufacturer
CodeNo.
LogoType
YMNNN
TypeName
LotNo.
SymbolMarkof
"Lead-Free"
Y:Lastdigitofyear
M:Monthcode1~9andO,N,D
NNN:Lotserialnumber
*Thefont(fonttype,size)andthelogotypesize
mightbeactuallydifferent.
hf
hf:Halogen-freemark
CONNECTION
①GATE
②DRAIN
③SOURCE
DIMENSIONSAREINMILLIMETERS.
35N60S1
① ② ③
① ② ③
Outview: TO-247 Package
Marking
8
FMW35N60S1HF
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of October 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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infringement of other's intellectual property rights which may arise from the use of the applications described herein.
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