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©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
HGTG10N120BND
35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a
N
on-
P
unch
T
hrough (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.
Features
• 35A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Symbol
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG10N120BND TO-247 10N120BND
NOTE: When ordering, use the entire part number.
G
C
E
E
G
C
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG10N120BND UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
35 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
17 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
298 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
µ
s
Short Circuit Withstand Time (Note 2) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 10
Ω.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 1200 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 1200V T
C
= 25
o
C - - 250
µ
A
T
C
= 125
o
C - 170 -
µ
A
T
C
= 150
o
C - - 2.5 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 10A,
V
GE
= 15V
T
C
= 25
o
C - 2.45 2.7 V
T
C
= 150
o
C - 3.7 4.2 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 90
µ
A, V
CE
= V
GE
6.0 6.8 - V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
20V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 10
Ω,
V
GE
= 15V,
L = 400
µ
H, V
CE(PK)
= 1200V
55 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 10A, V
CE
= 600V - 10.4 - V
On-State Gate Charge Q
G(ON)
I
C
= 10A,
V
CE
= 600V
V
GE
= 15V - 100 120 nC
V
GE
= 20V - 130 150 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
Ω
L = 2mH
Test Circuit (Figure 20)
-2326ns
Current Rise Time t
rI
-1115ns
Current Turn-Off Delay Time t
d(OFF)I
- 165 210 ns
Current Fall Time t
fI
- 100 140 ns
Turn-On Energy E
ON
- 0.85 1.05 mJ
Turn-Off Energy (Note 3) E
OFF
- 0.8 1.0 mJ
HGTG10N120BND
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 10A
V
CE
= 960V
V
GE
= 15V
R
G
= 10
Ω
L = 2mH
Test Circuit (Figure 20)
-2125ns
Current Rise Time t
rI
-1115ns
Current Turn-Off Delay Time t
d(OFF)I
- 190 250 ns
Current Fall Time t
fI
- 140 200 ns
Turn-On Energy E
ON
- 1.75 2.3 mJ
Turn-Off Energy (Note 3) E
OFF
- 1.1 1.4 mJ
Diode Forward Voltage V
EC
I
EC
= 10A - 2.55 3.2 V
Diode Reverse Recovery Time t
rr
I
EC
= 10A, dI
EC
/dt = 200A/
µ
s - 57 70 ns
I
EC
= 1A, dI
EC
/dt = 200A/
µ
s - 32 40 ns
Thermal Resistance Junction To Case R
θ
JC IGBT - - 0.42 oC/W
Diode - - 1.25 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
10
25 75 100 125 150
25
30
15
5
VGE = 15V
20
35
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
600 800400200 1000 1200
0
50
60
30
TJ = 150oC, RG = 10Ω, VG = 15V, L = 400µH
HGTG10N120BND
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, RG = 10Ω, L = 2mH, VCE = 960V
fMAX, OPERATING FREQUENCY (kHz)
2
1
10
2010
50
5
100
TC = 75oC, VGE = 15V, IDEAL DIODE
TCVGE
110oC12V
15V
15V
75oC
110oC
75oC12V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.42oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
VGE , GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
12 13 14 15 16
5
10
15
20
50
100
150
250
tSC ISC
25
200
VCE = 840V, RG = 10Ω, TJ = 125oC
02 4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
30
6810
40
50
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 12V
TC = -55oCTC = 25oC
TC = 150oC
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0246810
10
50
0
TC = -55oCTC = 25oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
EON, TURN-ON ENERGY LOSS (mJ)
4
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
2
50
5
10
015 20
TJ = 25oC, VGE = 12V, VGE = 15V
RG = 10Ω, L = 2mH, VCE = 960V
1
TJ = 150oC, VGE = 12V, VGE = 15V
1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
050
1.0
0.5
2.0
10
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
15 20
HGTG10N120BND
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
0
15
20
25
30
35
5
40
15 20
TJ = 25oC, TJ = 150oC, VGE = 15V
10
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
10
30
20
15010520
40
50
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
250
5
100
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
15
400
300
350
20
RG = 10Ω, L = 2mH, V
CE = 960V
10
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 150oC
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
0
50
150
200
5
100
250
300
2015
RG = 10Ω, L = 2mH, VCE = 960V
10
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
138 9 10 12
VGE , GATE TO EMITTER VOLTAGE (V)
11
60
80
14 15
100
TC = 150oC
TC = -55oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 20V
20
TC = 25oC
7
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
5
20
006020 80
VCE = 800V
IG (REF) = 1mA, RL = 60Ω, TC = 25oC
VCE = 1200V
10
15
120
VCE = 400V
100
40
HGTG10N120BND
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 5 10 15 20 25
0
CIES
COES
1
3
4
FREQUENCY = 1MHz
2
CRES
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
6
12
01
02
3
15
DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
9
34
VGE = 10V
VGE = 15V
t1
t2
PD
SINGLE PULSE
t1, RECTANGULAR PULSE DURATION (s)
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
ZθJC, NORMALIZED THERMAL RESPONSE
0.5
0.2
0.1
0.05
0.02
0.01
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
13456
150oC
25oC
-55oC
100
10
1
2
IF, FORWARD CURRENT (A)
10
20
70
201
30
60
t, RECOVERY TIMES (ns)
10
40
5
trr
ta
50
tb
2
TC = 25oC, dIEC / dt = 200A/µs
HGTG10N120BND
©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
RG = 10Ω
L = 2mH
VDD = 960V
+
-
HGTG10N120BND
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG10N120BND
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
www.onsemi.com
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