SIEMENS Silicon RF Switching Diode Preliminary Data @ For VHF band switching in TV/VTR tuners @ Low forward resistance, small capacitance, small inductance BA 592 VPSO5176 Type Marking Ordering Code (tape and reel) Pin Configuration Package BA 592 blue S Q62702-A950 \ 4 2 EHAOTOOE SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Va 35 Forward current Ir 100 mA Operating temperature range Top ~ 55... + 125 Storage temperature range Tstg 55 ... + 150 Thermal Resistance Junction - ambient Semiconductor Group | Rina 129 |< 450 KAW 10.94 SIEMENS BA 592 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol! Values Unit min. typ. Forward voltage VF fe = 100 mA ~ ~ 1 Reverse current Ta Va = 20V nA Diode capacitance Cr f= 1MHz Va=1V Va=3V - 0.92 0.6 0.85 hh eh ua pF Forward resistance n f= 100 MHz Ir=3mA le=10mMA - 0.45 0.7 0.5 Reverse resistance Va = 1V, f= 100 MHz L/gp Series inductance Ls nH Diode capacitance Cr = f (Vr) f=1MHz 2.0 A 592 pF EHD07009 7 4 i Semiconductor Group Forward resistance r = f (JF) f = 100 MHz 10! BA 592 mag to"! 10 10! 130 EHDO7010 mA 107 f,