PNP Silicon AF Transistor BC 369 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 368 (NPN) 2 3 1 Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1) TO-92 B Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 C2) Ptot 0.8 (1) W Junction temperature Tj 150 C Storage temperature range Tstg - 65 ... + 150 Junction - ambient2) Rth JA 156 Junction - case3) Rth JC 75 A mA Thermal Resistance 1) 2) 3) K/W For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 BC 369 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 30 mA V(BR)CE0 20 - - V Collector-base breakdown voltage IC = 10 A V(BR)CB0 25 - - Emitter-base breakdown voltage IE = 1 A V(BR)EB0 5 - - Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C ICB0 - - - - 100 10 nA A Emitter cutoff current VEB = 5 V IEB0 - - 100 nA DC current gain IC = 5 mA; VCE = 10 V IC = 500 mA; VCE = 1 V1) IC = 1 A; VCE = 1 V1) hFE 50 85 60 - 160 - - 375 - Collector-emitter saturation voltage1) IC = 1 A; IB = 100 mA VCEsat - - 0.5 Base-emitter voltage1) IC = 5 mA; VCE = 10 V IC = 1 A; VCE = 1 V VBE - - 0.6 - - 1 - 100 - - V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz 1) fT Pulse test: t 300 s, D 2 %. Semiconductor Group 2 MHz BC 369 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 25 V Permissible pulse load RthJA = f (tp) DC current gain hFE = f (IC) VCE = 1 V, TA = 25 C Semiconductor Group 3 BC 369 Collector current IC = f (VBE) VCE = 1 V, TA = 25 C Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10, TA = 25 C Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 4