Semiconductor Group 1
PNP Silicon AF Transistor BC 369
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 369 C62702-C748– TO-92
123
E C B
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 20 V
Peak collector current ICM 2
Base current IB100 mA
Collector current IC1A
Junction temperature Tj150 ˚C
Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Junction - ambient2) Rth JA ≤ 156 K/W
Emitter-base voltage VEB0 5
Peak base current IBM 200
Junction - case3) Rth JC ≤ 75
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm ×10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
●High current gain
●High collector current
●Low collector-emitter saturation voltage
●Complementary type: BC 368 (NPN)
1
23
Semiconductor Group 2
BC 369
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Base-emitter voltage1)
I
C = 5 mA; VCE = 10 V
I
C = 1 A; VCE = 1 V
VBE –
–0.6
––
1
VCollector-emitter breakdown voltage
I
C = 30 mA V(BR)CE0 20 – –
Collector-base breakdown voltage
I
C = 10 µAV(BR)CB0 25 – –
–DC current gain
I
C = 5 mA; VCE = 10 V
I
C = 500 mA; VCE = 1 V1)
I
C = 1 A; VCE = 1 V1)
hFE 50
85
60
–
160
–
–
375
–
MHzTransition frequency
I
C = 100 mA, VCE = 5 V, f = 20 MHz fT– 100 –
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E = 1 µAV(BR)EB0 5––
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
10 nAEmitter cutoff current
VEB = 5 V IEB0 – – 100
V
Collector-emitter saturation voltage1)
I
C = 1 A; IB = 100 mA VCEsat – – 0.5
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 3
BC 369
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 25 V
DC current gain hFE =f(IC)
VCE = 1 V, TA = 25 ˚C
Semiconductor Group 4
BC 369
Collector current IC=f(VBE)
VCE = 1 V, TA = 25 ˚C
Transition frequency fT=f(IC)
VCE = 5 V, f = 20 MHz
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 10, TA = 25 ˚C
