SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS 2SA1201 Unit in mm 4.6 MAX 2,6 MAX, FEATURES: mil O4+005 | . High Voltage > Veroz-120V aT | : 3 . High Transition Frequency : fy=120MHz i 3 a . - Pc=l~2W (Mounted on Ceramic Substrate) at Oe on! - Small Flat Package +909] a 045-00 3 . Complementary to 28C2881 +008 04-005 MAXIMUM RATINGS (Ta=25C) 1.6401 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBo -120 Vv i 3 f) 4 Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO <5 Vv lL BASE 2 COLLECTOR CHEAT SINE) Collector Current Ic -800 mA 3 RMITTRR Base Current Ip -160 mA JBDEC = Collector Power Dissipation Pc 500 mW RIAJ _ Collector Power Dissipation Pc 1000 mW TOSHIBA 2-SKIA Junction Temperature Tj 150 c Weight : 0.052 0 Storage Temperature Range Tstg -55~ 150 c Marking Type Name Pc: 2SA1201 mounted on ceramic substrate (250mm2 x 0.8t) > hFe Rank ELECTRICAL CHARACTERISTICS (Ta=25C) T T CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX UNIT Collector Cut-off Current IcBo Vcp=-120V, Ip=0 - - ~100 nA Emitter Cut-off Current TEBO VEB=-5V, Ic=0 - - }|-100 nA Collector-Emitter Vv Ic=- Ip=0 -120 - - Vv Breakdown Voltage (BR)CEO | Tc=~10mA, IB Emitter-Base Ipe-l Ic=0 -5 - - Vv Breakdown Voltage V(BR)EBO | Te=~imA, Ic . hFE VcR=-5V, Icz-100mA 80 - 240 DC Current Gain (Note) CE Ic Collector-Emitter Ic=-500mA, Ip=-5SOmA - - |f-1.0 Vv Saturation Voltage VcE(sat) | 1c=-5 > B Base Emitter Voltage VBE Vcp=-5V, Ic=-500mA - - [1.0 Vv Transition Frequency fv VcRgz-5V, Ic=-100mA - 120 - MHz Collector Output Capacitance Cob Vcpz-10V, Ip=0, f=1MHz - - 30 pF Note : hfe Classification oO : 80~ 160, Y : 120~240 155 2SA1201 COLLEC TOREMITTER lo - Ver 80 COMMON EMITTER Ta=25T Iq (mA) -60 CURRENT | - oc 5 2 -20 oO re om a oO oO _ COLLECTOR-EMITTER VOLTAGE Vop (Vv) Vor(sat) Ice O5 a COMMON FMITTER o> -a3 = xe ic/Ip 190 4 aan > a z 2 al Bo a5 BR a S 0.05, Da fa < a -a02 COLLECTOR CURRENT Ic (mA) SAFE OPERATING AREA 8000 MAX (PULSE) 1000 MAX Y ~ (CONTINUOU Sg 4 500 8 ~ -300 oO aa & 100 =z a = -s0 Pp Oo -30 ao QO & Q -10 a SINGLE NONREPETITIVE 3 _ PULSE Ta=25C oO CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -a3 1 3 10 30 100 =~-300 COLLECTOR EMITTER VOLTAGE Vop (v) 156 mw 500 mm Fad a H Gq 3 B za s Dp DD 2 Q ~ t we -O8 oO a e z O6 e p CL a4 ie a iJ oO fa yw -a a oO oO COLLECTOR POWER DISSIPATION Pe (CW) = hrr Ic COMMON EMITTER Vepzhv Ta=190C 25 -10 30 100 800 1000 COLLECTOR CURRENT Ig (mA) Ic VBE COMMON EMITTER Vop=5V Ta=100T 25 a2 -04 -06 -08 -10 1l12 BASE-FMITTBR VOLTAGE Vag (V) Po Ta @ MOUNTED ON CRRAMIC SUBSTRATE (250mm2xast) @ Ta=25 R20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (TC)