PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET TEL : (407 Aolitrou DEVICES, INC. 848-4311 3301 ELECTRONICS WAY, WEST PALM BEACH, FLORIDA 33407 FAX: (407) 863-5946 400V, 3.3A, 1.80 ABSOLUTE MAXIMUM RATINGS SDF 320 JAA SDF 320 =JAB SDF 320 JDA FEATURES RUGGED PACKAGE @HI-REL CONSTRUCT ION @ CERAMIC EYELETS: JAA, JAB @ LEAD BENDING OPTIONS @ COPPER CORED S2 ALLOY PINS @LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 SCREENING PARAMETER SYMBOL UNITS Drain-source Volt.(1) Voss 400 Vde Drain-Gate Voltage (Rog =1.0Ma) (1) VOGR 400 Vde Gate-Source Voltage Continuous : VGS #20 Vde erie secegn! Continuous iD 3.3 Adc Drain Current Pulsed(3) 10M 13 A Total Power Dissipation PD 50 W Power Dissipation Derating > 25C 0.4 W/C Operating & Storage Temp. | TJ/Tsig -55 TO +150 C Thermo! Resistance Rthdc 2.5 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Te =25C UNLESS OTHER- WISE SPECIFIED (CUSTOM BEND OPTIONS AVAILABLE) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP] MAX JUNITS| SCHEMATIC Drain-source lvprypss VGS=OV 400] - - v Breakdown Volt. 1D=250 WA (0) TERMINAL. CONNECTIONS Gate ThreshoTd G 4 voit oon VGS(TH)|VDS=VGS 1D=250HA [2.0] - |4.0[ V et 1]GATE [1] DRAIN Gate Bource | igss_|vcs=420 V - | [too] na t? 6) 2|DRAIN [2] SOURCE | [7.5 Gate VDS=MAX.RATING VGS-0| - | ~ [250[ HA {SOURCE 13] GATE Voltage Drain | IDSS |ypS=0.8 MAX.RATING | _ | _ froool ya STANDARD BEND JAA Current VGS=0-TU=125C CONF [ GURAT IONS Static Orain- VGS=10 V JDA Source On-State|RDS(ON)| | a -, A - ~ 41.8) 2 Resistance(1) ID=1.8 Forward Trans- vOS 2 50 V - Conductance (2)| 9fS | 1DS=1.8a 1.8] - s() Input Capacitance] CISS - |350] - pF S" 3 Output Capocitancel COSS SOM Vv ~- | 64] - pF 12 Esicdianser | onss | = [.i[ = [or Turn-On Delay |td(on) vO0=200V RG= 180 -~ | - | 15 ] ns 7 Ti =3. =56n _ - Rise Time tr (MOSFET switching times 20 | ns Turn-Off Delayltd(off)lare essentially indepen-| | ~ | 45 | "8 n 3 Foll Time tf dent of operoting temp. _ _ 20 ns D U" 12 Total Gote Ch ota ate arge 3 (Gaote-Source Plus Qs - - 20 fF nc 12 Gate-Drain VGS=10V, 1D=3.3A (CUSTOM BEND OPTIONS AVAILABLE) Gate Source | age tee ATsenti-| 7 | [3-3] 2c STANDARD BEND Gote-Droin ally independent of the CONF IGURAT IONS JAB | [Gmiriers) Ogg |orercting temperature) | _ | _ 1 41 | nc arge SOURCE-DRAIN DIODE RATINGS & CHARACT.T = 25C ( UNLESS OTHER- WISE SPECIFIED PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP .[MAX. [UNITS Continuous te: Source Current! 1S BO eg ee he - ~ [3.3] A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM Ifier (See schematic)} - | - [13] A Diode) (1) Diode Forward IF=3.3A VGS=O0V _ - Voltage {2) VSD Tc=+25C 1.6] V Reverse = e ~ Recovery Time | rr |Tc=t25 C ~ 600] ns Reverse Re- arr [aisdt=100a/ 4s - }1.4] - | pe covery Charge r \ h . h A16 REV. 10/93 3 TJ = 25C to 150C 2 3 Repetitive Rating: Pulse test: Pulse Width <300uS, Duty Cycle <2z. Pulse Width limited By Mox.junction Tempercture.