MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PM100RL1A120 FEATURE Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible L-series package. * 3 100A, 1200V Current-sense and temperature sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available from upper arm devices) * UL Recognized APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 135 122.1 11.7 26 40.5 W V 6.05 18 (13) 26 U 18.7 6-M5 Nuts (Screwing Depth) 13 6.05 1100.5 66.5 9 19- 5 0.5 1 30.15 11 4 Terminal code L A B E L 34.7 2-2.5 13 33.6 19 10 3-2 10 3-2 10 3-2 24.1 +1 -0.5 11 4-5.5 Mounting Holes 6-2 90.1 71.5 3.25 110 21.5 20 20 780.5 N P B 10.5 1. 2. 3. 4. 5. VUPC 6. UFO 7. UP 8. VUP1 9. VVPC 10. VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. WP VWP1 VNC VN1 Br 16. 17. 18. 19. UN VN WN Fo May 2009 November2012 1 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Br Fo VNC WN VN1 WP VWP1 VWPC WFO UN VN 1.5k Gnd In Gnd 1.5k Fo Vcc Si Out VP VVPC OT Gnd In Gnd Fo Vcc Si Out OT Gnd In Gnd Fo Vcc Si Out B OT Gnd In Gnd Fo Vcc Si Out OT N Gnd In Gnd UP VUPC VUP1 UFO 1.5k Fo Vcc Si Out VVP1 VFO OT Gnd In Gnd W V 1.5k Fo Vcc Si Out Gnd In OT Gnd Fo Vcc Si Out U OT P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 1200 100 200 657 -20 ~ +150 Unit V A A W C Ratings 1200 50 100 462 50 1200 -20 ~ +150 Unit V A A W A V C Ratings Unit 20 V 20 V 20 V 20 mA *: TC measurement point is just under the chip. BRAKE PART Symbol VCES IC ICP PC IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO Fault Output Supply Voltage IFO Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals November2012 May 2009 2 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VCC(surge) Tstg Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Viso Isolation Voltage VCC(PROT) Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS Ratings Unit 800 V 1000 -40 ~ +125 V C 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Parameter Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Thermal Resistance Rth(c-f) Contact Thermal Resistance Conditions Inverter, IGBT (per 1 element) Inverter, FWDi (per 1 element) Brake, IGBT Brake, FwDi upper part (Note.1) (Note.1) (Note.1) (Note.1) Case to fin, (per 1 module) Thermal grease applied (Note.1) Min. - Limits Typ. - Max. 0.19 0.31 0.27 0.47 - - 0.023 Unit C/W Note.1: If you use this value, Rth(f-a) should be measured just under the chips. Top View Top View PM100RL1A120 PM100RL1A120 350G * "350G" is printed on the label ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=100A VCIN=0V, Pulsed FwDi Forward Voltage -IC=100A, VD=15V, VCIN= 15V Switching Time VD=15V, VCIN=0V 15V VCC=600V, IC=100A Tj=125C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) 3 Tj=25C Tj=125C (Fig. 2) (Fig. 3,4) Tj=25C Tj=125C Min. 0.3 - Limits Typ. 1.65 1.85 2.3 0.8 0.3 0.4 1.2 0.4 - Max. 2.15 2.35 3.3 2.0 0.8 1.0 2.8 1.2 1 10 Unit V V s mA November2012 November. 2012 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE BRAKE PART Symbol VCE(sat) VEC ICES Condition Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) -IC = 50A, VCIN = 15V, VD = 15V VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Tj = 25C Tj = 125C Min. -- -- -- -- -- Limits Typ. 1.65 1.85 2.3 -- -- Max. 2.15 2.35 3.3 1 10 Min. -- -- 1.2 1.7 200 100 Limits Typ. 8 2 1.5 2.0 -- -- Max. 16 4 1.8 2.3 -- -- Unit V V mA CONTROL PART Symbol Parameter Condition VN1-VNC V*P1-V*PC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) Input ON Threshold Voltage Input OFF Threshold Voltage SC Short Circuit Trip Level Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Inverter part -20 Tj 125C, VD = 15V (Fig. 3,6) Brake part toff(SC) Short Circuit Current Delay Time VD = 15V Over Temperature Protection Detect Temperature of IGBT chip Supply Circuit Under-Voltage Protection -20 Tj 125C Fault Output Current VD = 15V, VCIN = 15V (Note-2) Minimum Fault Output Pulse Width VD = 15V (Note-2) OT OT(hys) UV UVr IFO(H) IFO(L) tFO (Fig. 3,6) Trip level Hysteresis Trip level Reset level Unit mA V A -- 0.2 -- s 135 -- 11.5 -- -- -- -- 20 12.0 12.5 -- 10 -- -- 12.5 -- 0.01 15 C 1.0 1.8 -- V mA ms (Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Condition Parameter Symbol -- Mounting torque -- Weight Mounting part Main terminal part screw : M5 screw : M5 -- Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 800 Max. 3.5 3.5 -- Unit N*m N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Using Application Circuit of Fig. 8 For IPM's each input signals Recommended value 800 Unit V 15.0 1.5 V (Fig. 7) 0.8 9.0 20 kHz 2.5 s V (Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND May 2009 November2012 4 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN Fo VCIN P, (U,V,W,B) Ic V IN Fo VCIN -Ic V (15V) (0V) U,V,W,B, (N) VD (all) U,V,W,B, (N) VD (all) Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P Fo VCIN (15V) trr Signal input (Upper Arm) CS Ic Irr Vcc Fo Signal input (Lower Arm) VCIN VCE U,V,W 90% 90% N VD (all) b) Upper Arm Switching Ic 10% 10% tc(on) P 10% 10% tc(off) Fo Signal input (Upper Arm) VCIN VCIN U,V,W CS VCIN (15V) Vcc td(on) tr td(off) tf Fo Signal input (Lower Arm) (ton = td(on) + tr) (toff = td(off) + tf) N Ic VD (all) Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform VCIN Short Circuit Current P, (U,V,W,B) A VCIN (15V) Constant Current IN Fo SC Trip Pulse VCE Ic VD (all) U,V,W,B, (N) Fo toff(SC) Fig. 5 ICES Test Fig. 6 SC Test Waveform IPM' input signal VCIN (Upper Arm) 0V 2V 1.5V 0V IPM' input signal VCIN (Lower Arm) 2V 1.5V 1.5V tdead 2V tdead t t tdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead time measurement point example November2012 May 2009 5 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE P 20k 10 VUP1 VD UFo IF 1.5k OT OUT Vcc Fo UP In VUPC + - Si U GND GND 0.1 VVP1 VFo VD 1.5k Fo VP Si In VVPC V GND GND VWP1 WFo OT OUT Vcc 1.5k OT OUT Vcc Fo VD WP Si In VWPC W GND GND 20k OUT Si Fo UN In GND GND 0.1 20k OT Vcc 10 IF M N OT Vcc 10 IF OUT Si Fo VN In GND GND 0.1 20k VD In GND GND VNC 4.7k IF Fo OUT Si Fo In 1.5k B OT Vcc Br 1k OUT Si Fo WN 0.1 OT Vcc 10 IF 5V VN1 GND GND : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * * May 2009 November2012 6 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES (Inverter Part) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 100 13V 80 60 40 20 0.5 0 1.0 1.5 2.5 2.0 1.5 1.0 0.5 Tj = 25C Tj = 125C 0 2.0 VD = 15V 0 20 40 60 80 100 120 140 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 2.4 2.2 2.0 1.8 1.6 1.4 IC = 100A Tj = 25C Tj = 125C 1.2 1.0 12 SWITCHING TIME ton, toff (s) 15V VD = 17V 120 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25C 13 14 15 16 17 18 103 VD = 15V 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 CONTROL POWER SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load 2 toff SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load SWITCHING TIME tc(on), tc(off) (s) COLLECTOR CURRENT IC (A) 140 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 100 7 5 4 3 ton 2 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 100 tc(off) 7 5 4 3 2 tc(on) 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) November2012 May 2009 7 MITSUBISHI PM100RL1A120 8.0 6.0 Eoff 4.0 2.0 0 0 20 40 60 80 100 DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 50.0 VCC = 600V 0.9 VD = 15V 45.0 T j = 25C 0.8 40.0 Tj = 125C 0.7 Inductive load 35.0 30.0 0.5 25.0 0.4 20.0 0.3 15.0 0.2 10.0 trr 0.1 0 120 Irr 0.6 5.0 20 0 40 60 80 100 0 120 COLLECTOR REVERSE CURRENT -IC (A) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 7.0 VCC = 600V 6.0 VD = 15V Tj = 25C Tj = 125C 5.0 Inductive load ID VS. fc CHARACTERISTICS (TYPICAL) VD = 15V Tj = 25C Tj = 125C 100.0 N-side 80.0 ID (mA) 4.0 3.0 60.0 40.0 2.0 P-side 20.0 1.0 0 UVt /UVr 120.0 0 20 40 60 80 100 0 120 0 5 10 15 20 25 COLLECTOR REVERSE CURRENT -IC (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 14 1.4 12 1.2 1.6 SC SWITCHING LOSS Err (mJ/pulse) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CURRENT lrr (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 16.0 VCC = 600V 14.0 VD = 15V Eon Tj = 25C Tj = 125C 12.0 Inductive load 10.0 REVERSE RECOVERY TIME trr (s) SWITCHING LOSS Eon, Eoff (mJ/pulse) FLAT-BASE TYPE INSULATED PACKAGE 10 1.0 8 0.8 6 0.6 4 0.4 2 0.2 0 -50 0 50 100 0 -50 150 Tj (C) 0 50 100 150 Tj (C) May 2009 November2012 8 MITSUBISHI PM100RL1A120 FLAT-BASE TYPE INSULATED PACKAGE (Brake Part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 10-1 7 5 3 2 10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.19C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 0.31C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 15V Tj = 25C VD = 17V 50 13V 40 30 20 10 0 0.5 0 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) t(sec) 2.5 VD = 15V 2.0 1.5 1.0 0.5 Tj = 25C Tj = 125C 0 COLLECTOR RECOVERY CURRENT -IC (A) 60 7 5 3 2 0 10 20 30 40 50 60 2.4 2.2 2.0 1.8 1.6 1.4 IC = 50A Tj = 25C Tj = 125C 1.2 1.0 12 70 13 14 15 16 17 18 COLLECTOR CURRENT IC (A) CONTROL POWER SUPPLY VOLTAGE VD (V) DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 102 100 VD = 15V 7 5 4 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 100 2 101 7 5 4 3 2 100 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 10-1 7 5 3 2 10-2 Single Pulse 7 5 IGBT part; Per unit base = Rth(j-c)Q = 0.28C/ W 3 2 FWDi part; Per unit base = Rth(j-c)F = 0.48C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec) May 2009 November2012 9