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MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
September 2014
MPSA06 / MMBTA06 / PZTA06
NPN General-Purpose Amplifier
Features
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA.
Sourced from process 12.
Ordering Information
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MPSA06 MPSA06 TO-92 3L Bulk
MMBTA06 1G SOT-23 3L Tape and Reel
PZTA06 A06 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector- Base Voltage 80 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector Current - Continuous 500 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
SOT-23
B
E
C
Mark: 1G
TO-92
B C E
SOT-223
C
MPSA06 MMBTA06 PZTA06
E B C
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
5. Pulse test: pulse width 300 μs, duty cycle 2%.
Symbol Parameter Max. Unit
MPSA06 MMBTA06(3) PZTA06(4)
PDTotal Devic e Dissipation 625 350 1000 mW
Derate Above 2 5°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 200 357 125 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdo w n Voltage(5) IC = 1.0 mA, IB = 0 80 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4.0 V
ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA
ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 0.1 μA
On Characteristics
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100
IC = 100 mA, VCE = 1.0 V 100
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Small Signal Characteristics
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
f = 100 MHz 100 MHz
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Collector Saturation Regio n
0.001 0.01 0.1
50
100
150
200
I - CO LL EC TOR CU RR ENT (A)
h - TYP ICAL PULSED CURRE NT GAIN
FE
- 40 °C
25 °C
C
V = 1V
CE
125 °C
0. 1 1 1 0 10 0 1 00 0
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRENT (mA)
V - COLLEC TOR EM ITTE R VOLTA GE (V)
C
CESAT
β= 10
- 40 °C
25 °C
125 °C
ββ
0. 1 1 1 0 10 0 1 00 0
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EM ITTE R VOLTAGE (V)
C
BESAT
β= 10
- 40 °C
25 °C
125 °C
ββ
1 10 100 1000
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
- 40 °C
25 °C
125 °C
ββ
25 50 75 100 125
0.001
0.01
0. 1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 80 V
CB
0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC=500mA
IC=250mA
IC=100mA
IC=50mA
IC=10mA
VCE(SAT), Collector Emitter Voltage (V)
IB - Base Current (mA)
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Collector-Emitter Breakd own V olt age
with Resistance Between Emitter-Base Figure 8. Input and Output Capacitance vs.
Reverse Current
Figure 9. Gain Bandwidth Product vs.
Collector Current Figure 10. Power Dissipation vs.
Ambient Temperature
ββ
0.1 1 10 100 1000
111
112
113
114
115
116
117
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
ββ
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
C
f = 1.0 MHz
CE
C
ob
ib
ββ
1102050100
100
150
200
250
300
350
400
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
CE
ββ
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 5
Physical Dimensions
Figure 11. 3-LEAD, TO-92, MOLDED, STD STRAIGHT LEAD (NO EOL CODE)
D
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 6
Physical Dimensions (Continued)
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 7
Physical Dimensions (Continued)
Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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