Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 2500 V TC = 80 C IC,nom. 1000 A TC = 25 C IC 1700 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 2000 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 10,4 kW VGES +/- 20V V IF 1000 A IFRM 2000 A I2t 400 kA2s VISOL 5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 1000A, VGE = 15V, Tvj = 25C VCE sat typ. max. - 3,0 3,6 V - 3,85 - V VGE(th) 4,3 5,3 6,3 V IC = 1000A, VGE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 80mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V ... +15V QG - 16 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 120 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - - - nF VCE = 2500V, VGE = 0V, Tvj = 25C ICES - 0,2 - mA - 40 - mA - - 600 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 2500V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Oliver Schilling date of publication: 14.06.2000 approved by: Chr. Lubke; 14.06.00 revision: 2 1(9) IGES FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) IC = 1000A, VCE = 1200V turn on delay time (inductive load) VGE = 15V, RG = 1,4, Tvj = 25C, td,on VGE = 15V, RG = 1,4, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) tr VGE = 15V, RG = 2,7, Tvj = 25C, td,off Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data s - s - 0,2 - s - 0,2 - s 2,2 - s - 2,2 - s - 0,2 - s - 0,2 - s Eon - 1300 - mWs Eoff - 1000 - mWs ISC - 4000 - A LsCE - 12 - nH RCC+EE - 0,19 - m min. typ. max. - 2,2 2,8 V - 2,25 - V - 1050 - A - 1200 - A tf IC = 1000A, VCE = 1200V, VGE = 15V RG = 1,4, Tvj = 125C , LS = 60nH IC = 1000A, VCE = 1200V, VGE = 15V RG = 2,7, Tvj = 125C , LS = 60nH tP 10sec, VGE 15V TVj125C, VCC=1200V, VCEmax=VCES -LsCE *dI/dt Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip Diode / Diode Durchlaspannung forward voltage IF = 1000A, VGE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 1000A, - diF/dt = 6000A/s VF IF = 1000A, VGE = 0V, Tvj = 125C VR = 1200V, VGE = -10V, Tvj = 25C IRM VR = 1200V, VGE = -10V, Tvj = 125C IF = 1000A, - diF/dt = 6000A/s VR = 1200V, VGE = -10V, Tvj = 25C Qr VR = 1200V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy - 0,85 IC = 1000A, VCE = 1200V VGE = 15V, RG = 2,7, Tvj = 25C, Modulinduktivitat stray inductance module Sperrverzogerungsladung recovered charge 0,85 - - VGE = 15V, RG = 2,7, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse - IC = 1000A, VCE = 1200V VGE = 15V, RG = 2,7, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) max. IC = 1000A, VCE = 1200V VGE = 15V, RG = 1,4, Tvj = 25C, VGE = 15V, RG = 1,4, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) typ. - 540 - As - 1000 - As - 400 - mWs - 800 - mWs IF = 1000A, - diF/dt = 6000A/s VR = 1200V, VGE = -10V, Tvj = 25C VR = 1200V, VGE = -10V, Tvj = 125C 2(9) Erec FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,012 K/W - - 0,024 K/W RthCK - 0,006 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per Module dPaste 100m / dgrease 100m RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index >400 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque terminals M4 M2 terminals M8 Gewicht weight G 5 Nm 2 Nm 8 - 10 Nm 1000 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 Ausgangskennlinie (typisch) Output characteristic (typical) vorlaufige Daten preliminary data I C = f (VCE) VGE = 15V 2000 Tj = 25C Tj = 125C IC [A] 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125C 2000 VGE = 20V VGE = 15V VGE = 12V 1500 VGE = 10V IC [A] VGE = 9V VGE = 8V 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 10V 2000 Tj = 25C Tj = 125C IC [A] 1500 1000 500 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 2000 Tj = 25C Tj = 125C IF [A] 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VF [V] 5(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon=1,4, Rgoff=2,7, VGE=15V, VCE = 1200V, Tj = 125C, LS = 60nH Switching losses (typical) 6000 Eon 5000 Eoff Erec E [mJ] 4000 3000 2000 1000 0 0 500 1000 1500 2000 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 1000A , VCE = 1200V , VGE=15V, Tj = 125C, LS = 60nH 4000 Eon 3500 Eoff Erec 3000 E [mJ] 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 RG [] 6(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 2,7 Ohm, Tvj= 125C 2000 IC [A] 1500 1000 IC,Modul IC,Chip 500 0 0 500 1000 1500 2000 2500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Tvj= 125C 2000 IR [A] 1500 1000 500 0 0 500 1000 1500 2000 2500 VR [V] 7(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) ZthJC [K / W] 0,1 0,01 0,001 Zth:Diode Zth:IGBT 0,0001 0,001 0,01 0,1 1 10 100 t [sec] 1 2 3 4 : IGBT 1,35 3,3 5,55 1,8 : IGBT 0,011 0,052 0,103 0,95 : Diode 3,15 7,5 6,75 6,6 : Diode 0,025 0,056 0,1 1,31 i ri [K/kW] i [sec] ri [K/kW] i [sec] 8(9) FZ101@2_RS2W Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1000 R 25 KF1 vorlaufige Daten preliminary data Auere Abmessungen und Schaltbild / extenal dimensions and circuit diagram v v & & . . 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