BGSA11GN10 Low RON Dual Single Pole Single Throw Antenna Tuning Switch Data Sheet Revision 0.3 - 2015-08-04 Power Management & Multimarket Edition 2015-08-04 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 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BGSA11GN10 Revision History Document No.: BGSA11GN10.pdf Revision History: 0.3 Previous Version: 0.2 Page Subjects (major changes since last revision) 7 updated min frequency Trademarks of Infineon Technologies AG AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM , DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM , OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM , ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM , TRENCHSTOPTM . Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM , THUMBTM of ARM Limited, UK. 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Last Trademarks Update 2012-12-13 Data Sheet 3 Revision 0.3 - 2015-08-04 BGSA11GN10 Contents Contents 1 Features 6 2 Product Description 6 3 Maximum Ratings 7 4 Operation Ranges 8 5 Logic Table 8 6 RF small signal parameter 9 7 RF large signal parameter 10 8 Package Outline and Pin Configuration 12 9 Application Examples 9.1 Single SPST shunt operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.2 Low RON SPST shunt operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.3 Dual SPST for RF tuning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16 17 17 List of Figures 1 2 3 4 5 6 7 8 9 10 11 BGSA11GN10 block diagram . . . . . . . . . . . . . . . . . . . . . . . Pinout (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Dimensions Drawing . . . . . . . . . . . . . . . . . . . . . . . Land pattern and stencil mask . . . . . . . . . . . . . . . . . . . . . . Tape drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package marking: Date code digits Y and W are found in Table 13/14 BGSA11GN10 realizable circuit configurations . . . . . . . . . . . . . BGSA11GN10 single SPST shunt configuration . . . . . . . . . . . . BGSA11GN10 low RON SPST shunt configuration . . . . . . . . . . . BGSA11GN10 as shunt capacitance tuning device . . . . . . . . . . . BGSA11GN10 as shunt inductance tuning device . . . . . . . . . . . Data Sheet 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 13 13 14 14 16 16 17 17 18 Revision 0.3 - 2015-08-04 BGSA11GN10 List of Tables List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Ordering Information . . . . . Maximum Ratings, Table I . . Maximum Ratings, Table II . . Operation Ranges . . . . . . Logic Table . . . . . . . . . . RF small signal specifications RF large signal Specifications Logic Table . . . . . . . . . . Logic Table . . . . . . . . . . Logic Table . . . . . . . . . . Pin description . . . . . . . . Mechanical data . . . . . . . Operation Ranges . . . . . . Operation Ranges . . . . . . Logic Table . . . . . . . . . . Logic Table . . . . . . . . . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 8 8 8 9 10 10 10 11 12 12 14 15 18 18 Revision 0.3 - 2015-08-04 BGSA11GN10 BGSA11GN10 Low RON Dual Single Pole Single Throw Antenna Tuning Switch 1 Features * high-linearity Dual SPST for antenna aperture switching applications * Ultra-Low RON of 0.79 in ON state for each SPST, 0.38 using both SPST in parallel * Ultra-Low COFF of 250 fF in OFF state * High max RF voltage OFF state handling: 36 V peak (72 Vp-p ) * Low harmonic generation * No power supply blocking required * Supply voltage: 1.8 to 3.6 V * Control voltage: 1.35 to 3.3 V (control high) * Suitable for EDGE / C2K / LTE / WCDMA Applications * 0.1 to 5.0 GHz coverage * Small form factor 1.1 mm x 1.5 mm * 400 m pad pitch * RoHS and WEEE compliant package 2 Product Description The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna aperture switch optimized for low Ron enabling applications up to 5.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors. Table 1: Ordering Information Type Package Marking Chip BGSA11GN10 TSNP10-1 11 BGSA11GN10 Data Sheet 6 Revision 0.3 - 2015-08-04 BGSA11GN10 VDD RFC Voltage Regulator ESD Driver CTRL1 CTRL2 Driver Chargepump GND RF1 RF2 Figure 1: BGSA11GN10 block diagram 3 Maximum Ratings Table 2: Maximum Ratings, Table I at TA = 25 C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition 1) Frequency Range f 0.1 - - GHz Supply voltage 2) VDD -0.5 - 3.6 V - - Storage temperature range TSTG -55 - 150 RF input power PRF _TRx - - 39 dBm ESD capability, CDM 2) VESDCDM -1.5 - +1.5 kV ESD capability, HBM 4) VESDHBM -1 - +1 kV VESDANT -8 - +8 kV Tj - - 125 ESD capability, system level (RFC port) C 5) Junction temperature 25 % Duty Cycle RFC vs system GND, with 27 nH shunt inductor C - 1) Switch has a low pass response. The DC voltage at RF ports VRFDC has to be 0V. Note: Consider any ripple voltages on top of VDD . A high RF ripple at the VDD can exceed the maximum ratings by VDD = VDC + VRipple . 3) Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 4) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 k, C = 100 pF). 5) IEC 61000-4-2 (R = 330 , C = 150 pF), contact discharge. 2) Data Sheet 7 Revision 0.3 - 2015-08-04 BGSA11GN10 Table 3: Maximum Ratings, Table II at TA = 25 C, unless otherwise specified Parameter Symbol Maximum DC-voltage on RF-Ports Values Unit Note / Test Condition 0 V No DC voltages allowed on 3.3 V - Unit Note / Test Condition Min. Typ. Max. VRFDC 0 - VCTRL -0.7 - and RF-Ground RF-Ports Control Voltage Levels 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Min. Typ. Max. Supply voltage VDD 1.8 2.85 3.6 V - Supply current1) IDD - 80 150 A - Control voltage low VCtrl,low 0 0.45 V - Control voltage high VCtrl,high 1.2 1.8 2.85 V VCtrl,high VDD Control current low ICtrl,low -1 0 1 A - Control current high ICtrl,high -1 0 1 A VCtrl,high VDD C Ambient temperature TA -30 25 85 RF switching time tsw 2 5 7 s - Startup time tsw 20 30 s - 1) T A - = -30 C - +85 C, VVDD = 1.8 - 3.6 V 5 Logic Table Table 5: Logic Table CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc 0 0 OFF OFF 0 1 OFF ON 1 0 ON OFF 1 1 ON ON 1) , CTRL1 and CTRL 2 can be connected together to control both switches at once. This enables the use of both SPSTs to reduce Ron by parallel switching. Data Sheet 8 Revision 0.3 - 2015-08-04 BGSA11GN10 6 RF small signal parameter Table 6: RF small signal specifications Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Frequency range f 0.1 - 5.0 GHz - Switch ON resistance RON 0.7 0.79 0.89 RFx to RFC Switch OFF capacitance COFF - 250 - fF RFx to RFC Parasitic RF shunt capacitance CSH,PAR - 42 - fF RFx to GND, extracted value for 2 GHz Switch series inductance LSER - 0.1 - nH - 824 - 960 MHz 0.10 0.19 0.28 dB VDD = 1.8 - 3.6 V , 1710 - 1980 MHz 0.18 0.29 0.40 dB TA = -30 ... +85 C, 0.25 0.33 0.40 dB Z0 = 50 , 0.25 0.35 0.45 dB RF1 or RF2 switched to RFC 25 28 36 dB VDD = 1.8 - 3.6 V , 19 25 30 dB TA = -30 ... +85 C, 17 23 25 dB Z0 = 50 824 - 915 MHz 21 23 30 dB 1710 - 1980 MHz 15 17 20 dB 14 16 20 dB 12 14 18 dB 824 - 915 MHz 22 24 31 dB 1710 - 1980 MHz 26 18 21 dB 15 17 20 dB 13 14 19 dB Insertion Loss (1,2,3) 1981 - 2169 MHz IL 2170 - 2690 MHz Return Loss(1,2,3) All Ports @ 824 - 915 MHz All Ports @ 1710 - 2169 MHz RL All Ports @ 2170 - 2690 MHz (1,2,3) Isolation RFx to RFC 1981 - 2169 MHz ISO 2170 - 2690 MHz VDD = 1.8 - 3.6 V , TA = -30 ... +85 C, Z0 = 50 Isolation RFx to RFx(1,2,3) 1981 - 2169 MHz 2170 - 2690 MHz ISO VDD = 1.8 - 3.6 V , TA = -30 ... +85 C, Z0 = 50 1) Valid for all RF power levels, no compression behavior Network analyser input power: PIN = -20 dBm 3) On application board without any matching components 2) Data Sheet 9 Revision 0.3 - 2015-08-04 BGSA11GN10 7 RF large signal parameter Table 7: RF large signal specifications Parameter Symbol RF operating voltage Values Unit Note / Test Condition Min. Typ. Max. - - 36 V PH2 - 105 - dBc 25 dBm, 50, f0 = 786 MHz PH3 - 115 - dBc 25 dBm, 50, f0 = 786 MHz PH2 - 98 - dBc 33 dBm, 50, f0 = 824 MHz PH3 - 110 - dBc 33 dBm, 50, f0 = 824 MHz PHx 105 - - dBc 25 dBm, 50, CW mode VRF _peak Harmonic Generation up to 12.75 GHz(1,2,3) All RF Ports - Second Order Harmonics All RF Ports - Third Order Harmonics All RF Ports - Second Order Harmonics All RF Ports - Third Order Harmonics All RF Ports Intermodulation Distortion IMD2 (1,2,3) IIP2, low IIP2,l - 110 - dBm IIP2, high IIP2,h - 120 - dBm IIP3 - 75 - dBm IIP3 conditions table 9 IIP3,SV - 75 - dBm SV-LTE conditions table 10 IIP2 conditions table 8 Intermodulation Distortion IMD3 (1,2,3) IIP3 SV LTE Intermodulation (1,2,3) IIP3,SVLTE 1) Terminating Port Impedance: Z0 = 50 components 2) Supply Voltage: VDD = 1.8 - 3.6 V 3) On application board without any matching Table 8: IIP2 conditions table Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 [MHz] [MHz] [dBm] [MHz] [dBm] Band 1 Low 2140 1950 20 190 -15 Band 1 High 2140 1950 20 4090 -15 Band 5 Low 881.5 836.5 20 45 -15 Band 5 High 881.5 836.5 20 1718 -15 In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 [MHz] [MHz] [dBm] [MHz] [dBm] Band 1 2140 1950 20 1760 -15 Band 5 881.5 836.5 20 791.5 -15 Table 9: IIP3 conditions table Band Data Sheet 10 Revision 0.3 - 2015-08-04 BGSA11GN10 Table 10: SV-LTE conditions table Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2 [MHz] [MHz] [dBm] [MHz] [dBm] Band 5 872 827 23 872 14 Band 13 747 786 23 747 14 Band 20 878 833 23 2544 14 Data Sheet 11 Revision 0.3 - 2015-08-04 BGSA11GN10 8 Package Outline and Pin Configuration RFC 10 9 1 RF1 2 8 RF2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 2: Pinout (top view) Table 11: Pin Description Pin No. Name Pin Buffer Type Type Function 1 N.C. N.C. Not connected 2 RF1 I/O RF1 3 GND GND Ground 4 VDD PWR Supply voltage 5 CTRL 1 I Control Pin 6 CTRL 2 I Control Pin 7 GND GND Ground 8 RF2 I/O RF2 9 N.C. N.C. Not connected 10 RFC I/O Common RF Table 12: Mechanical Data Parameter Symbol Value Unit X-Dimension X 1.1 0.05 mm Y-Dimension Y 1.5 0.05 mm Size Size 1.65 mm2 Height H 0.375 mm Data Sheet 12 Revision 0.3 - 2015-08-04 BGSA11GN10 Top vIew Bottom view Figure 3: Package Dimensions Drawing Optional solder mask dam 0.4 0.4 0.4 0.2 0.475 10x 0.25 0.4 0.475 10x 0.25 0.4 10x 0.25 Copper 0.4 Stencil apertures Solder mask TSNP-10-1-FP V01 Figure 4: Land pattern and stencil mask Data Sheet 13 Revision 0.3 - 2015-08-04 BGSA11GN10 0.5 1.7 Pin 1 marking 8 4 1.3 TSNP-10-1-TP V01 Figure 5: Tape drawing Pin 1 marking 11 Date code (YW) Type code TSNP-10-1MK V02 Figure 6: Package marking: Date code digits Y and W are found in Table 13/14 Table 13: Year date code marking - digit "Y" Data Sheet Year "Y" Year "Y" Year "Y" 2000 0 2010 0 2020 0 2001 1 2011 1 2021 1 2002 2 2012 2 2022 2 2003 3 2013 3 2023 3 2004 4 2014 4 2024 4 2005 5 2015 5 2025 5 2006 6 2016 6 2026 6 2007 7 2017 7 2027 7 2008 8 2018 8 2028 8 2009 9 2019 9 2029 9 14 Revision 0.3 - 2015-08-04 BGSA11GN10 Table 14: Week date code marking - digit "W" Data Sheet Week "W" Week "W" Week "W" Week "W" Week "W" 1 A 12 N 23 4 34 h 45 v 2 B 13 P 24 5 35 j 46 x 3 C 14 Q 25 6 36 k 47 y 4 D 15 R 26 7 37 l 48 z 5 E 16 S 27 a 38 n 49 8 6 F 17 T 28 b 39 p 50 9 7 G 18 U 29 c 40 q 51 2 8 H 19 V 30 d 41 r 52 3 9 J 20 W 31 e 42 s 10 K 21 Y 32 f 43 t 11 L 22 Z 33 g 44 u 15 Revision 0.3 - 2015-08-04 BGSA11GN10 9 Application Examples The BGSA11GN10 is a dual single pole single throw (SPST) RF switch in a 1.05 mm x 1.55 mm TSNP-10-1 package. Both SPST can be controlled individually by the control placed next to each other. This solution allows the use of the device for several applications shown in Fig. 7: * Low RON = 0.79 SPST (a) or ultra low RON = 0.38 SPST (b) * Tuning with 2 reactive devices such as capacitors or inductors. (c) * Combinations of above. (a) Single SPST (b) 2 SPSTs parallel (c) 2 SPSTs for Tuning C1 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 RFC VBATT RF2 CTRL 2 CTRL 1 RF1 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 C2 Figure 7: BGSA11GN10 realizable circuit configurations 9.1 Single SPST shunt operation The configuration (a) is used to obtain an RON = 0.79 and COFF = 250fF . It can be used for series and shunt configurations. Note, that for single SPST shunt configuration, is is better to connect RFC to GND to avoid additional capacitance contribution of the unused part RF2 to GND as shown in Fig. 8. For simplicity, connecting the unused RF and Control Pin can be connected to ground. 10 RF2 RFC VBATT RF1 CTRL 2 CTRL 1 1 9 RF1 2 8 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 8: BGSA11GN10 single SPST shunt configuration Data Sheet 16 Revision 0.3 - 2015-08-04 BGSA11GN10 9.2 Low RON SPST shunt operation 9.2 Low RON SPST shunt operation For lowest possible RON = 0.38 operation, it is required to connect the logic inputs CTRL 1 with CTRL 2 together and same for RF1 and RF2 as shown in Fig. 9 10 RF2 RF1 CTRL 2 CTRL 1 1 RFC VBATT RFC 9 RF1 2 8 RF2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 Figure 9: BGSA11GN10 low RON SPST shunt configuration 9.3 Dual SPST for RF tuning The dual SPST can also be used for tuning applications, for example to tune capacitance or inductance. Fig. 10 shows as example a tunable capacitance with 4 steps by using 2 external MLCC capacitors. Note that the RF voltage should not exceed the specified 36 V over the switch device and also not for the used capacitor. 10 C1 1 C1 RF2 RF1 CTRL 1 CTRL 2 RFC VBATT RFC 9 RF2 C2 8 RF1 2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 C2 Figure 10: BGSA11GN10 as shunt capacitance tuning device For example, resulting capacitances using C1 and C2 can be controlled as shown in table 15. Resulting Q factors can be calculated using the RON values using the equation Q = (Fig. 11) with Q = Data Sheet L RON 1 C RON with = 2f . Same function can be realized also with inductors in table 16. 17 Revision 0.3 - 2015-08-04 BGSA11GN10 9.3 10 RFC VBATT L1 RF2 RF1 CTRL 1 CTRL 2 RFC 1 L1 Dual SPST for RF tuning 9 RF2 8 RF1 2 L2 GND 3 7 GND VDD 4 6 CTRL 2 5 CTRL 1 L2 Figure 11: BGSA11GN10 as shunt inductance tuning device Table 15: Logic Table CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Capacitance RON 0 0 OFF OFF 500 fF 500 k 0 1 OFF ON 250 fF + C2 0.79 1 0 ON OFF 250 fF + C1 0.79 1 1 ON ON C1 + C2 0.38 Table 16: Logic Table CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Inductance RON 0 0 OFF OFF - 500 k 0 1 OFF ON L2 0.79 1 0 ON OFF L1 0.79 1 1 ON ON L1 || L2 0.38 Data Sheet 18 Revision 0.3 - 2015-08-04 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG